摘要:
A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a magneto-resistive layer which comprises a tunnel barrier layer, an underlying pinned layer, and an overlying free layer. A non-magnetic layer is formed on the free layer for protection. A composite-layer film comprised of an insulating layer and a damage reducing layer is formed in contact with an effective region which is effectively involved in detection of magnetism in the magneto-resistive layer without overlapping with the effective region. The damage reducing layer is made of a material which includes at least one element, the atomic weight of which is larger than that of silicon. The insulating layer and damage reducing layer do not constitute a magnetic domain control layer for applying a biasing magnetic field to the free layer.
摘要:
An upper metal layer made of a non-magnetic metal is formed as a protection layer on the top surface of a free layer positioned topmost of a magneto-resistive layer constituting a TMR device. An upper electrode, serving additionally as an upper magnetic shield layer, is electrically connected to the free layer through an underlying layer of the upper electrode, and the upper metal layer. The thickness of the upper metal layer is chosen to be 10 nm or more.
摘要:
A method of manufacturing a magnetic head manufactures a magnetic head having a base, and a laminate stacked on the base and including a magneto-resistive device. The method mechanically polishes a surface of a structure including the base and the laminate close to a magnetic recording medium, wherein the surface of the structure includes an end face of the laminate including an end face of the magneto-resistive device and a surface of the base. Next, the method selectively etches a first region on the surface of the structure close to the magnetic recording medium, wherein the first region includes the surface of the base but does not include the end face of the magneto-resistive device. Subsequently, the method entirely etches the surface of the structure close to the magnetic recording medium.
摘要:
A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0
摘要:
A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0
摘要:
A method of manufacturing a magnetic head manufactures a magnetic head having a base, and a laminate stacked on the base and including a magneto-resistive device. The method mechanically polishes a surface of a structure including the base and the laminate close to a magnetic recording medium, wherein the surface of the structure includes an end face of the laminate including an end face of the magneto-resistive device and a surface of the base. Next, the method selectively etches a first region on the surface of the structure close to the magnetic recording medium, wherein the first region includes the surface of the base but does not include the end face of the magneto-resistive device. Subsequently, the method entirely etches the surface of the structure close to the magnetic recording medium.
摘要:
A rotating field sensor includes a first detection circuit that outputs a first signal indicating the intensity of a component of a rotating magnetic field in a first direction, a second detection circuit that outputs a second signal indicating the intensity of a component of the rotating magnetic field in a second direction, and an arithmetic circuit that calculates a detected angle value based on the first and second signals. Each of the first and second detection circuits includes at least one MR element row. Each MR element row is composed of a plurality of MR elements connected in series. Each MR element has a magnetization pinned layer. The plurality of MR elements forming each MR element row include one or more pairs of MR elements. Magnetization directions of the magnetization pinned layers in two MR elements making up a pair form a predetermined relative angle other than 0° and 180°.
摘要:
A field generation unit generates a rotating magnetic field including a first partial magnetic field in a first position and a second partial magnetic field in a second position. The first and second partial magnetic fields differ in direction by 180° and rotate in the same direction of rotation. A first detection unit detects, in the first position, a first angle that the direction of a first applied field forms with respect to a first direction. The first applied field includes the first partial magnetic field as its main component. A second detection unit detects, in the second position, a second angle that the direction of a second applied field forms with respect to a second direction. The second applied field includes the second partial magnetic field as its main component. A detected value of the angle that the direction of the rotating magnetic field in a reference position forms with respect to a reference direction is calculated based on detected values of the first and second angles.
摘要:
A first detection unit has first and second detection circuits. A second detection unit has third and fourth detection circuits. Output signals of the second and fourth detection circuits differ from output signals of the first and third detection circuits in phase, respectively, by an odd number of times ¼ the signal period. The output signal of the third detection circuit differs from the output signal of the first detection circuit in phase by an integer multiple of ⅙ the signal period other than an integer multiple of ½ the signal period. A rotating field sensor generates a first signal based on the output signals of the first and third detection circuits, generates a second signal based on the output signals of the second and fourth detection circuits, and calculates a detected angle value based on the first and second signals.
摘要:
A field generation unit generates a rotating magnetic field including a first partial magnetic field in a first position and a second partial magnetic field in a second position. The first and second partial magnetic fields differ in direction by 180° and rotate in the same direction of rotation. A first detection unit located in the first position has first and second detection circuits whose output signals differ in phase by ¼ the period. A second detection unit located in the second position has third and fourth detection circuits whose output signals differ in phase by ¼ the period. A detected value of the angle that the direction of the rotating magnetic field in a reference position forms with respect to a reference direction is calculated based on a first signal generated from the output signals of the first and third detection circuits and a second signal generated from the output signals of the second and fourth detection circuits.