公开(公告)号：US06555421B2

公开(公告)日：2003-04-29

申请号：US09758238

申请日：2001-01-12

申请人： Naoko Matsuyama ,  Sinya Sasaki

发明人： Naoko Matsuyama ,  Sinya Sasaki

IPC分类号： H01L2100

CPC分类号： C23C16/45502 ,  C23C16/0272 ,  C23C16/405 ,  C23C16/455 ,  H01L21/67017

摘要： A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming process in which film-forming gases 14, 15 are caused to flow over a surface of a substrate 11 substantially in parallel therewith to form thin films on the substrate surface. The film-forming process includes an initial film-forming step for forming a first thin film on the surface of the substrate 11 under a first film-forming conditions and a main film-forming step for forming, on the first thin film acting as a backing layer, a second thin film of a thickness greater than that of the first thin film under a second film-forming condition which differs from the first film-forming condition.

摘要翻译： 用于制造半导体器件的方法和装置可以在衬底上形成均匀厚度的薄膜。 该方法和装置包括一个成膜过程，其中成膜气体14,15基本上平行地流过基板11的表面，以在基板表面上形成薄膜。 成膜方法包括在第一成膜条件下在基板11的表面上形成第一薄膜的初始成膜步骤和用于在作为第一薄膜形成步骤的第一薄膜上形成的主成膜步骤 背衬层，其厚度大于第一薄膜形成条件下的第二薄膜，该第二薄膜形成条件与第一成膜条件不同。