公开(公告)号：US20120114833A1

公开(公告)日：2012-05-10

申请号：US13281090

申请日：2011-10-25

申请人： Yoshiyuki Nakagawa ,  Shingo Nakano ,  Naoto Fukuda

发明人： Yoshiyuki Nakagawa ,  Shingo Nakano ,  Naoto Fukuda

IPC分类号： C23C16/52 ,  C23C16/448

CPC分类号： C23C14/24 ,  C23C14/546

摘要： A film formation apparatus includes a film formation source, a quartz oscillator for measurement, and a quartz oscillator for calibration. When a thin film is formed on an object, a film forming material is heated in the source to release vapors thereof. The quartz oscillator for measurement measures the amount of the film forming material formed on the object, while the quartz oscillator for calibration calibrates the quartz oscillator for measurement. A moving part for moving the film formation source between a predetermined film formation waiting position and a predetermined film forming position with respect to the film formation object is further provided, the moving part holds the quartz oscillator for measurement so that its relative position with respect to the film formation source is maintained, and the quartz oscillator for calibration is provided above the moving part when the moving part is at the film formation waiting position.

摘要翻译： 成膜装置包括成膜源，用于测量的石英振荡器和用于校准的石英振荡器。 当在物体上形成薄膜时，在源中加热成膜材料以释放其蒸汽。 用于测量的石英振荡器测量在物体上形成的成膜材料的量，而用于校准的石英振荡器校准用于测量的石英振荡器。 还提供了一种用于在预定的成膜等待位置和相对于成膜物体的预定成膜位置之间移动成膜源的移动部件，移动部件保持用于测量的石英振荡器，使得其相对于 保持成膜源，并且当移动部分处于成膜等待位置时，用于校准的石英振荡器设置在移动部分的上方。

公开(公告)号：US20120114840A1

公开(公告)日：2012-05-10

申请号：US13284040

申请日：2011-10-28

申请人： Naoto Fukuda ,  Yoshiyuki Nakagawa ,  Shingo Nakano

发明人： Naoto Fukuda ,  Yoshiyuki Nakagawa ,  Shingo Nakano

IPC分类号： C23C16/52 ,  C23C16/455

CPC分类号： C23C14/24 ,  C23C14/546 ,  H01L51/001 ,  H01L2251/558

摘要： Provided is a vacuum vapor deposition system including: a vapor depositing source; a film thickness sensor for monitoring; and a film thickness sensor for calibration, in which a distance L1 from a center of an opening of the vapor depositing source to the film thickness sensor for calibration and a distance L2 from the center to the film thickness sensor for monitoring satisfy a relationship of L1≦L2, and angle θ1 formed by a perpendicular line from the center of the opening of the vapor deposition source to a film formation surface of the substrate and a straight line connecting the center of the opening of the vapor depositing source to the film thickness sensor for calibration, and angle θ2 formed by the perpendicular line and a straight line connecting the center of the opening of the vapor depositing source to the film thickness sensor for monitoring satisfy a relationship of θ1≦θ2.

摘要翻译： 提供一种真空气相沉积系统，包括：气相沉积源; 用于监测的膜厚度传感器; 以及用于校准的膜厚度传感器，其中从气相沉积源的开口的中心到用于校准的膜厚度传感器的距离L1和从中心到用于监测的膜厚度传感器的距离L2满足L1＆nlE的关系 ; L2，角度和角度; 1由从气相沉积源的开口的中心到衬底的成膜表面的垂直线形成，以及将气相沉积源的开口的中心连接到膜的直线 用于校准的厚度传感器和角度和角度; 2由垂直线形成，并且将蒸气沉积源的开口的中心连接到用于监测的膜厚度传感器的直线满足关系; 1＆nlE;＆Thetas; 2。

公开(公告)号：US20120114839A1

公开(公告)日：2012-05-10

申请号：US13284027

申请日：2011-10-28

申请人： Naoto Fukuda ,  Yoshiyuki Nakagawa ,  Shingo Nakano

发明人： Naoto Fukuda ,  Yoshiyuki Nakagawa ,  Shingo Nakano

IPC分类号： C23C16/52 ,  C23C16/455

CPC分类号： C23C14/546 ,  C23C14/24

摘要： Provided is a vacuum vapor deposition system, which enables a vapor deposition rate to be measured accurately and a film thickness to be controlled with higher accuracy. The vacuum vapor deposition system includes: a vacuum chamber; a substrate holding mechanism; a vapor depositing source; a film thickness sensor for monitoring; a control system including a temperature controller and a film thickness controller; and a film thickness sensor for calibration, in which a distance from one film thickness sensor whose measurement accuracy is to be enhanced, out of the film thickness sensor for monitoring and the film thickness sensor for calibration, to a center of the opening of the vapor depositing source, is smaller than a distance from another film thickness sensor to the center of the opening of the vapor depositing source.

摘要翻译： 提供了一种真空气相沉积系统，其能够精确地测量气相沉积速率并且以更高的精度控制膜厚度。 真空蒸镀系统包括：真空室; 基板保持机构; 气相沉积源; 用于监测的膜厚度传感器; 包括温度控制器和膜厚控制器的控制系统; 以及用于校准的膜厚度传感器，其中将要测量精度的一个膜厚度传感器的距离从用于监测的膜厚度传感器和用于校准的膜厚度传感器提供到蒸气开口的中心 沉积源，小于从另一膜厚度传感器到气相沉积源开口中心的距离。

公开(公告)号：US20120114838A1

公开(公告)日：2012-05-10

申请号：US13281077

申请日：2011-10-25

申请人： Yoshiyuki Nakagawa ,  Shingo Nakano ,  Naoto Fukuda

发明人： Yoshiyuki Nakagawa ,  Shingo Nakano ,  Naoto Fukuda

IPC分类号： C23C16/52 ,  C23C16/448

CPC分类号： C23C14/24 ,  C23C14/546

摘要： A film formation apparatus includes a film formation source, a quartz oscillator for measurement, and a quartz oscillator for calibration. When a thin film of a film forming material is formed on a film formation object, the film forming material is heated in the film formation source to release vapors thereof. The quartz oscillator for measurement measures the amount of the film forming material formed on the film formation object, while the quartz oscillator for calibration calibrates the quartz oscillator for measurement. In the film formation apparatus, there are further provided a moving part for moving the film formation source between a predetermined film formation waiting position and a predetermined film forming position with respect to the film formation object and a temperature control part for controlling a temperature of the quartz oscillator for measurement and a temperature of the quartz oscillator for calibration to be substantially the same.

摘要翻译： 成膜装置包括成膜源，用于测量的石英振荡器和用于校准的石英振荡器。 当在成膜物体上形成成膜材料的薄膜时，成膜材料在成膜源中被加热以释放其蒸汽。 用于测量的石英振荡器测量在成膜物体上形成的成膜材料的量，而用于校准的石英振荡器校准用于测量的石英振荡器。 在成膜装置中，还设置有用于使成膜源相对于成膜物体在预定的成膜等待位置和预定的成膜位置之间移动的移动部件，以及用于控制成膜材料的温度的温度控制部件 用于测量的石英振荡器和用于校准的石英振荡器的温度基本相同。

公开(公告)号：US20120114837A1

公开(公告)日：2012-05-10

申请号：US13281036

申请日：2011-10-25

申请人： Yoshiyuki Nakagawa ,  Shingo Nakano ,  Naoto Fukuda

发明人： Yoshiyuki Nakagawa ,  Shingo Nakano ,  Naoto Fukuda

IPC分类号： C23C16/52 ,  C23C16/455

CPC分类号： C23C16/52 ,  C23C14/24 ,  C23C14/546 ,  C23C16/46

摘要： Provided are a film formation apparatus and a film formation method which may control with accuracy the thickness of a thin film formed on the film formation object. A film formation apparatus includes a moving part (film formation source unit) for moving a film formation source between a predetermined film formation waiting position and a predetermined film forming position is provided, and the moving part holds a quartz oscillator for measurement and a quartz oscillator for calibration so that their relative positions with respect to the film formation source are maintained. And a calibration step for calibrating a monitored value of the quartz oscillator for measurement, using a monitored value of the quartz oscillator for calibration, is performed in a middle of the film forming step of forming the film on the film formation object.

摘要翻译： 提供可以精确地控制在成膜物体上形成的薄膜的厚度的成膜装置和成膜方法。 一种成膜装置包括：用于在预定的成膜等待位置和预定的成膜位置之间移动成膜源的移动部件（成膜源单元），并且移动部件保持用于测量的石英振荡器和石英振荡器 用于校准，使得它们相对于成膜源的相对位置得以保持。 并且在成膜物体上形成膜的成膜步骤的中间进行用于校准用于测量的石英振荡器的监测值的校准步骤，使用石英振荡器的监测值进行校准。

公开(公告)号：US08062425B2

公开(公告)日：2011-11-22

申请号：US11452196

申请日：2006-06-14

申请人： Toshiaki Yoshikawa ,  Naoto Fukuda

发明人： Toshiaki Yoshikawa ,  Naoto Fukuda

IPC分类号： C23C16/00

CPC分类号： C23C14/243 ,  C23C14/564 ,  Y10T117/10

摘要： There is provided a device or a method including a flow path switching unit which switches a first flow path for releasing the vapor deposition material evaporated from a vapor depositing source from the same into a chamber, and a second flow path for causing the vapor deposition material evaporated from the vapor depositing source to flow from the vapor depositing source through a transfer path into a recovery container. The vapor deposition system or the vapor deposition method is capable of reducing an amount of a vapor deposition material consumed without being deposited on an object not to be processed during non-vapor deposition.

摘要翻译： 提供了一种装置或方法，其包括流路切换单元，该流路切换单元将用于将从气相沉积源蒸发的气相沉积材料从其蒸发的第一流路切换到室中;以及第二流路，用于使蒸镀材料 从气相沉积源蒸发，从气相沉积源通过传输路径流入回收容器。 气相沉积系统或气相沉积方法能够减少在非气相沉积期间不沉积在不被处理物体上消耗的气相沉积材料的量。

公开(公告)号：US07964037B2

公开(公告)日：2011-06-21

申请号：US11764403

申请日：2007-06-18

申请人： Naoto Fukuda ,  Toshiaki Yoshikawa ,  Seiji Mashimo

发明人： Naoto Fukuda ,  Toshiaki Yoshikawa ,  Seiji Mashimo

IPC分类号： C23C16/00

CPC分类号： C23C14/26 ,  C23C14/243 ,  C23C14/545 ,  C23C14/56 ,  H01L51/001 ,  H01L51/56

摘要： A vacuum deposition apparatus capable of enhancing the productivity of an organic electroluminescence device is realized. A first pipe is connected to a deposition source for evaporating an organic electroluminescence material, and two second pipes are directed to two film deposition objects comprised of substrates and masks, whereby an organic deposition film is formed. Vapor is released simultaneously from the deposition source to plural film deposition objects on different planes to deposit films, which promotes the reduction in film deposition time and the miniaturization of an apparatus.

摘要翻译： 实现了能够提高有机电致发光元件的生产率的真空蒸镀装置。 第一管连接到用于蒸发有机电致发光材料的沉积源，并且两个第二管被引导到由基底和掩模组成的两个膜沉积物体，从而形成有机沉积膜。 蒸气从沉积源同时释放到不同平面上的多个成膜物体以沉积膜，这促进了膜沉积时间的减少和装置的小型化。

公开(公告)号：US20060283382A1

公开(公告)日：2006-12-21

申请号：US11452196

申请日：2006-06-14

申请人： Toshiaki Yoshikawa ,  Naoto Fukuda

发明人： Toshiaki Yoshikawa ,  Naoto Fukuda

IPC分类号： C30B11/00

CPC分类号： C23C14/243 ,  C23C14/564 ,  Y10T117/10

摘要： There is provided a device or a method including a flow path switching unit which switches a first flow path for releasing the vapor deposition material evaporated from a vapor depositing source from the same into a chamber, and a second flow path for causing the vapor deposition material evaporated from the vapor depositing source to flow from the vapor depositing source through a transfer path into a recovery container. The vapor deposition system or the vapor deposition method is capable of reducing an amount of a vapor deposition material consumed without being deposited on an object not to be processed during non-vapor deposition.

摘要翻译： 提供了一种装置或方法，其包括流路切换单元，该流路切换单元将用于将从气相沉积源蒸发的气相沉积材料从其蒸发的第一流路切换到室中;以及第二流路，用于使蒸镀材料 从气相沉积源蒸发，从气相沉积源通过传输路径流入回收容器。 气相沉积系统或气相沉积方法能够减少在非气相沉积期间不沉积在不被处理物体上消耗的气相沉积材料的量。

公开(公告)号：US09054147B2

公开(公告)日：2015-06-09

申请号：US13270520

申请日：2011-10-11

申请人： Naoto Fukuda

发明人： Naoto Fukuda

IPC分类号： G01B11/00 ,  H01L21/68 ,  C23C14/04 ,  C23C14/54 ,  H01L51/00 ,  G01B11/14

CPC分类号： H01L21/682 ,  C23C14/042 ,  C23C14/54 ,  G01B11/14 ,  H01L51/0011 ,  H01L51/0012

摘要： A method of carrying out alignment between a substrate and a mask, each having respective alignment marks. Vibrations attic substrate in a direction of gravity are measured. An antiphase vibrational wave is calculated, based an data corresponding to the measured vibrations. The antiphase vibrational wave is applied to the substrate, thereby reducing the vibrations or the substrate. When the vibrations of the substrate in the direction of gravity fall within a predetermined value that is set in advance, images are taken of relative positions of the alignment marks provided on the substrate and the mask, respectively, from the substrate side, and corresponding data is produced. Based on the data corresponding to the obtained images, an amount of movement of one of the substrate and the mask is calculated in a horizontal direction. One of the substrate and the mask is moved, based on the calculated movement amount.

摘要翻译： 一种在基板和掩模之间进行对准的方法，每个具有相应的对准标记。 测量重力方向上的振动顶板基板。 基于对应于测量的振动的数据计算反相振动波。 反相振动波被施加到基板，从而减少振动或基板。 当基板在重力方向上的振动落在预先设定的预定值内时，从基板侧分别获取设置在基板和掩模上的对准标记的相对位置的图像，以及相应的数据 生产。 基于与所获得的图像相对应的数据，在水平方向上计算基板和掩模之一的移动量。 基于计算出的移动量移动基板和掩模之一。

公开(公告)号：US20080014825A1

公开(公告)日：2008-01-17

申请号：US11764403

申请日：2007-06-18

申请人： Naoto Fukuda ,  Toshiaki Yoshikawa ,  Seiji Mashimo

发明人： Naoto Fukuda ,  Toshiaki Yoshikawa ,  Seiji Mashimo

IPC分类号： H01J9/38 ,  C23C16/00

CPC分类号： C23C14/26 ,  C23C14/243 ,  C23C14/545 ,  C23C14/56 ,  H01L51/001 ,  H01L51/56

摘要： A vacuum deposition apparatus capable of enhancing the productivity of an organic electroluminescence device is realized. A first pipe is connected to a deposition source for evaporating an organic electroluminescence material, and two second pipes are directed to two film deposition objects comprised of substrates and masks, whereby an organic deposition film is formed. Vapor is released simultaneously from the deposition source to plural film deposition objects on different planes to deposit films, which promotes the reduction in film deposition time and the miniaturization of an apparatus.

摘要翻译： 实现了能够提高有机电致发光元件的生产率的真空蒸镀装置。 第一管连接到用于蒸发有机电致发光材料的沉积源，并且两个第二管被引导到由基底和掩模组成的两个膜沉积物体，从而形成有机沉积膜。 蒸气从沉积源同时释放到不同平面上的多个成膜物体以沉积膜，这促进了膜沉积时间的减少和装置的小型化。