公开(公告)号：US08748882B2

公开(公告)日：2014-06-10

申请号：US13014363

申请日：2011-01-26

申请人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai ,  Narihiro Morosawa

发明人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai ,  Narihiro Morosawa

IPC分类号： H01L29/18 ,  H01L29/12

CPC分类号： H01L29/78606 ,  H01L29/12 ,  H01L29/7869

摘要： A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘膜和氧化物半导体膜，其中栅电极的至少一部分包括金属氧化物。 除了制造方法之外，还提供了包括薄膜晶体管的电子装置和显示装置。

公开(公告)号：US20110248270A1

公开(公告)日：2011-10-13

申请号：US13078543

申请日：2011-04-01

申请人： Eri Fukumoto ,  Yasuhiro Terai ,  Narihiro Morosawa

发明人： Eri Fukumoto ,  Yasuhiro Terai ,  Narihiro Morosawa

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L29/517

摘要： A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm3 or more and less than 2.79 g/cm3.

摘要翻译： 提供了使用用于沟道的氧化物半导体的薄膜晶体管，其可以被控制使得阈值电压为正并且可以提高可靠性。 薄膜晶体管包括栅极电极，一对源极/漏极电极，形成沟道的氧化物半导体层，设置在栅极电极和一对源极/漏极电极之间，第一绝缘膜作为栅极绝缘膜设置在 所述氧化物半导体层位于所述栅电极附近的一侧，所述第二绝缘膜设置在所述一对源/漏电极附近的所述氧化物半导体层上。 第一绝缘膜和第二绝缘膜中的一个或两个包括膜密度为2.70g / cm 3以上且小于2.79g / cm 3的氧化铝。

公开(公告)号：US08389991B2

公开(公告)日：2013-03-05

申请号：US12951683

申请日：2010-11-22

申请人： Narihiro Morosawa ,  Eri Fukumoto ,  Yasuhiro Terai

发明人： Narihiro Morosawa ,  Eri Fukumoto ,  Yasuhiro Terai

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78606

摘要： The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.

摘要翻译： 本发明提供一种使用氧化物半导体作为沟道的薄膜晶体管，将阈值电压控制在正方向，并实现可靠性的提高。 薄膜晶体管包括：栅电极; 一对源极/漏极; 设置在所述栅极电极和所述一对源极/漏极电极之间并形成沟道的氧化物半导体层; 设置在氧化物半导体层的栅电极侧的作为栅极绝缘膜的第一绝缘膜; 以及设置在所述氧化物半导体层的所述一对源极/漏极侧的第二绝缘膜。 第一绝缘膜和/或第二绝缘膜含有/含有氟。

公开(公告)号：US08378351B2

公开(公告)日：2013-02-19

申请号：US13078543

申请日：2011-04-01

申请人： Eri Fukumoto ,  Yasuhiro Terai ,  Narihiro Morosawa

发明人： Eri Fukumoto ,  Yasuhiro Terai ,  Narihiro Morosawa

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L29/517

摘要： A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm3 or more and less than 2.79 g/cm3.

摘要翻译： 提供了使用用于沟道的氧化物半导体的薄膜晶体管，其可以被控制使得阈值电压为正并且可以提高可靠性。 薄膜晶体管包括栅极电极，一对源极/漏极电极，形成沟道的氧化物半导体层，设置在栅极电极和一对源极/漏极电极之间，第一绝缘膜作为栅极绝缘膜设置在 所述氧化物半导体层位于所述栅电极附近的一侧，所述第二绝缘膜设置在所述一对源/漏电极附近的所述氧化物半导体层上。 第一绝缘膜和第二绝缘膜中的一个或两个包括膜密度为2.70g / cm 3以上且小于2.79g / cm 3的氧化铝。

公开(公告)号：US20110186853A1

公开(公告)日：2011-08-04

申请号：US13014363

申请日：2011-01-26

申请人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai ,  Narihiro Morosawa

发明人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai ,  Narihiro Morosawa

IPC分类号： H01L29/12 ,  H01L21/336

CPC分类号： H01L29/78606 ,  H01L29/12 ,  H01L29/7869

摘要： A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘膜和氧化物半导体膜，其中栅电极的至少一部分包括金属氧化物。 除了制造方法之外，还提供了包括薄膜晶体管的电子装置和显示装置。

公开(公告)号：US20110140116A1

公开(公告)日：2011-06-16

申请号：US12951683

申请日：2010-11-22

申请人： Narihiro Morosawa ,  Eri Fukumoto ,  Yasuhiro Terai

发明人： Narihiro Morosawa ,  Eri Fukumoto ,  Yasuhiro Terai

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78606

摘要： The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.

摘要翻译： 本发明提供一种使用氧化物半导体作为沟道的薄膜晶体管，将阈值电压控制在正方向，并实现可靠性的提高。 薄膜晶体管包括：栅电极; 一对源极/漏极; 设置在所述栅极电极和所述一对源极/漏极电极之间并形成沟道的氧化物半导体层; 设置在氧化物半导体层的栅电极侧的作为栅极绝缘膜的第一绝缘膜; 以及设置在所述氧化物半导体层的所述一对源极/漏极侧的第二绝缘膜。 第一绝缘膜和/或第二绝缘膜含有/含有氟。

公开(公告)号：US20110180802A1

公开(公告)日：2011-07-28

申请号：US13122307

申请日：2009-10-07

申请人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

发明人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

IPC分类号： H01L33/00 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3262

摘要： Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20. Moreover, since the second layer 32 is made of an insulation material including silicon (Si), the time to be taken for film formation can be reduced compared with a single layer made of aluminum oxide.

摘要翻译： 提供一种薄膜晶体管，其能够抑制氧等氧化物半导体层的解吸，并减少成膜时间，以及具有该显示装置的显示装置。 栅极绝缘膜22，沟道保护层24和钝化膜26均包括由氧化铝制成的第一层31和由包含硅（Si）的绝缘材料制成的第二层32。 第一层31和第二层32彼此重叠设置，使得第一层31位于氧化物半导体层23的侧面。氧化物半导体层23由两个由氧化铝制成的第一层31夹在两侧 ，从而抑制氧等的解吸，并且稳定TFT20的电特性。此外，由于第二层32由包​​含硅（Si）的绝缘材料制成，因此可以减少用于成膜的时间，比较 具有由氧化铝制成的单层。

公开(公告)号：US08461594B2

公开(公告)日：2013-06-11

申请号：US13122307

申请日：2009-10-07

申请人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

发明人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3262

摘要： Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20. Moreover, since the second layer 32 is made of an insulation material including silicon (Si), the time to be taken for film formation can be reduced compared with a single layer made of aluminum oxide.

摘要翻译： 提供一种薄膜晶体管，其能够抑制氧等氧化物半导体层的解吸，并减少成膜时间，以及具有该显示装置的显示装置。 栅极绝缘膜22，沟道保护层24和钝化膜26均包括由氧化铝制成的第一层31和由包含硅（Si）的绝缘材料制成的第二层32。 第一层31和第二层32彼此重叠设置，使得第一层31位于氧化物半导体层23的侧面。氧化物半导体层23由两个由氧化铝制成的第一层31夹在两侧 ，从而抑制氧等的解吸，并且稳定TFT20的电特性。此外，由于第二层32由包​​含硅（Si）的绝缘材料制成，因此可以减少用于成膜的时间，比较 具有由氧化铝制成的单层。

公开(公告)号：US08486774B2

公开(公告)日：2013-07-16

申请号：US13155118

申请日：2011-06-07

申请人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai

发明人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/78648

摘要： A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

摘要翻译： 提供一种薄膜晶体管，其包括栅电极，源电极和漏电极，形成在栅电极上的氧化物半导体有源层，形成在氧化物半导体活性层的一部分上的固定电荷存储层，以及 固定电荷控制电极形成在固定的电荷存储层上。

公开(公告)号：US20110309876A1

公开(公告)日：2011-12-22

申请号：US13155118

申请日：2011-06-07

申请人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai

发明人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai

IPC分类号： H03K3/01 ,  H01L33/16 ,  H01L29/04 ,  H01L21/336 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/78648

摘要： A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer.

摘要翻译： 提供一种薄膜晶体管，其包括栅电极，源电极和漏电极，形成在栅电极上的氧化物半导体有源层，形成在氧化物半导体活性层的一部分上的固定电荷存储层，以及 固定电荷控制电极形成在固定的电荷存储层上。