公开(公告)号：US20110180802A1

公开(公告)日：2011-07-28

申请号：US13122307

申请日：2009-10-07

申请人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

发明人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

IPC分类号： H01L33/00 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3262

摘要： Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20. Moreover, since the second layer 32 is made of an insulation material including silicon (Si), the time to be taken for film formation can be reduced compared with a single layer made of aluminum oxide.

摘要翻译： 提供一种薄膜晶体管，其能够抑制氧等氧化物半导体层的解吸，并减少成膜时间，以及具有该显示装置的显示装置。 栅极绝缘膜22，沟道保护层24和钝化膜26均包括由氧化铝制成的第一层31和由包含硅（Si）的绝缘材料制成的第二层32。 第一层31和第二层32彼此重叠设置，使得第一层31位于氧化物半导体层23的侧面。氧化物半导体层23由两个由氧化铝制成的第一层31夹在两侧 ，从而抑制氧等的解吸，并且稳定TFT20的电特性。此外，由于第二层32由包​​含硅（Si）的绝缘材料制成，因此可以减少用于成膜的时间，比较 具有由氧化铝制成的单层。

公开(公告)号：US08748882B2

公开(公告)日：2014-06-10

申请号：US13014363

申请日：2011-01-26

申请人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai ,  Narihiro Morosawa

发明人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai ,  Narihiro Morosawa

IPC分类号： H01L29/18 ,  H01L29/12

CPC分类号： H01L29/78606 ,  H01L29/12 ,  H01L29/7869

摘要： A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘膜和氧化物半导体膜，其中栅电极的至少一部分包括金属氧化物。 除了制造方法之外，还提供了包括薄膜晶体管的电子装置和显示装置。

公开(公告)号：US08461594B2

公开(公告)日：2013-06-11

申请号：US13122307

申请日：2009-10-07

申请人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

发明人： Narihiro Morosawa ,  Yasuhiro Terai ,  Toshiaki Arai

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3262

摘要： Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film 22, a channel protection layer 24, and a passivation film 26 are each in the laminate configuration including a first layer 31 made of aluminum oxide, and a second layer 32 made of an insulation material including silicon (Si). The first and second layers 31 and 32 are disposed one on the other so that the first layer 31 comes on the side of an oxide semiconductor layer 23. The oxide semiconductor layer 23 is sandwiched on both sides by the first layers 31 made of aluminum oxide, thereby suppressing desorption of oxygen and others, and stabilizing the electrical characteristics of a TFT 20. Moreover, since the second layer 32 is made of an insulation material including silicon (Si), the time to be taken for film formation can be reduced compared with a single layer made of aluminum oxide.

摘要翻译： 提供一种薄膜晶体管，其能够抑制氧等氧化物半导体层的解吸，并减少成膜时间，以及具有该显示装置的显示装置。 栅极绝缘膜22，沟道保护层24和钝化膜26均包括由氧化铝制成的第一层31和由包含硅（Si）的绝缘材料制成的第二层32。 第一层31和第二层32彼此重叠设置，使得第一层31位于氧化物半导体层23的侧面。氧化物半导体层23由两个由氧化铝制成的第一层31夹在两侧 ，从而抑制氧等的解吸，并且稳定TFT20的电特性。此外，由于第二层32由包​​含硅（Si）的绝缘材料制成，因此可以减少用于成膜的时间，比较 具有由氧化铝制成的单层。

公开(公告)号：US20110186853A1

公开(公告)日：2011-08-04

申请号：US13014363

申请日：2011-01-26

申请人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai ,  Narihiro Morosawa

发明人： Yasuhiro Terai ,  Eri Fukumoto ,  Toshiaki Arai ,  Narihiro Morosawa

IPC分类号： H01L29/12 ,  H01L21/336

CPC分类号： H01L29/78606 ,  H01L29/12 ,  H01L29/7869

摘要： A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method.

摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括栅极，栅极绝缘膜和氧化物半导体膜，其中栅电极的至少一部分包括金属氧化物。 除了制造方法之外，还提供了包括薄膜晶体管的电子装置和显示装置。

公开(公告)号：US20110248270A1

公开(公告)日：2011-10-13

申请号：US13078543

申请日：2011-04-01

申请人： Eri Fukumoto ,  Yasuhiro Terai ,  Narihiro Morosawa

发明人： Eri Fukumoto ,  Yasuhiro Terai ,  Narihiro Morosawa

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L29/517

摘要： A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm3 or more and less than 2.79 g/cm3.

摘要翻译： 提供了使用用于沟道的氧化物半导体的薄膜晶体管，其可以被控制使得阈值电压为正并且可以提高可靠性。 薄膜晶体管包括栅极电极，一对源极/漏极电极，形成沟道的氧化物半导体层，设置在栅极电极和一对源极/漏极电极之间，第一绝缘膜作为栅极绝缘膜设置在 所述氧化物半导体层位于所述栅电极附近的一侧，所述第二绝缘膜设置在所述一对源/漏电极附近的所述氧化物半导体层上。 第一绝缘膜和第二绝缘膜中的一个或两个包括膜密度为2.70g / cm 3以上且小于2.79g / cm 3的氧化铝。

公开(公告)号：US08389991B2

公开(公告)日：2013-03-05

申请号：US12951683

申请日：2010-11-22

申请人： Narihiro Morosawa ,  Eri Fukumoto ,  Yasuhiro Terai

发明人： Narihiro Morosawa ,  Eri Fukumoto ,  Yasuhiro Terai

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78606

摘要： The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.

摘要翻译： 本发明提供一种使用氧化物半导体作为沟道的薄膜晶体管，将阈值电压控制在正方向，并实现可靠性的提高。 薄膜晶体管包括：栅电极; 一对源极/漏极; 设置在所述栅极电极和所述一对源极/漏极电极之间并形成沟道的氧化物半导体层; 设置在氧化物半导体层的栅电极侧的作为栅极绝缘膜的第一绝缘膜; 以及设置在所述氧化物半导体层的所述一对源极/漏极侧的第二绝缘膜。 第一绝缘膜和/或第二绝缘膜含有/含有氟。

公开(公告)号：US08378351B2

公开(公告)日：2013-02-19

申请号：US13078543

申请日：2011-04-01

申请人： Eri Fukumoto ,  Yasuhiro Terai ,  Narihiro Morosawa

发明人： Eri Fukumoto ,  Yasuhiro Terai ,  Narihiro Morosawa

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L29/517

摘要： A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm3 or more and less than 2.79 g/cm3.

摘要翻译： 提供了使用用于沟道的氧化物半导体的薄膜晶体管，其可以被控制使得阈值电压为正并且可以提高可靠性。 薄膜晶体管包括栅极电极，一对源极/漏极电极，形成沟道的氧化物半导体层，设置在栅极电极和一对源极/漏极电极之间，第一绝缘膜作为栅极绝缘膜设置在 所述氧化物半导体层位于所述栅电极附近的一侧，所述第二绝缘膜设置在所述一对源/漏电极附近的所述氧化物半导体层上。 第一绝缘膜和第二绝缘膜中的一个或两个包括膜密度为2.70g / cm 3以上且小于2.79g / cm 3的氧化铝。

公开(公告)号：US20110140116A1

公开(公告)日：2011-06-16

申请号：US12951683

申请日：2010-11-22

申请人： Narihiro Morosawa ,  Eri Fukumoto ,  Yasuhiro Terai

发明人： Narihiro Morosawa ,  Eri Fukumoto ,  Yasuhiro Terai

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/78606

摘要： The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine.

摘要翻译： 本发明提供一种使用氧化物半导体作为沟道的薄膜晶体管，将阈值电压控制在正方向，并实现可靠性的提高。 薄膜晶体管包括：栅电极; 一对源极/漏极; 设置在所述栅极电极和所述一对源极/漏极电极之间并形成沟道的氧化物半导体层; 设置在氧化物半导体层的栅电极侧的作为栅极绝缘膜的第一绝缘膜; 以及设置在所述氧化物半导体层的所述一对源极/漏极侧的第二绝缘膜。 第一绝缘膜和/或第二绝缘膜含有/含有氟。

公开(公告)号：US08884293B2

公开(公告)日：2014-11-11

申请号：US13617869

申请日：2012-09-14

申请人： Yasuhiro Terai ,  Toshiaki Arai

发明人： Yasuhiro Terai ,  Toshiaki Arai

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L21/00 ,  H01L27/12

CPC分类号： H01L27/124 ,  H01L27/1225 ,  H01L29/45

摘要： A display device includes: a thin film transistor; and a wiring layer; the thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode made of a light transmissive material and electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material, the second electrode being electrically connected to each of the semiconductor layer and the wiring layer, wherein a difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material.

摘要翻译： 显示装置包括：薄膜晶体管; 和布线层; 所述薄膜晶体管包括控制电极，面对所述控制电极的半导体层，由透光材料制成并电连接到所述半导体层的第一电极，以及包括具有比所述光的电阻低的金属膜的第二电极 所述第二电极与所述半导体层和所述布线层中的每一个电连接，其中构成所述金属膜的材料与构成所述布线层的一部分或全部的导电材料之间的电离倾向的差小于 透光材料与导电材料之间的电离倾向差异。

公开(公告)号：US08816352B2

公开(公告)日：2014-08-26

申请号：US13365775

申请日：2012-02-03

申请人： Yasuhiro Terai ,  Toshiaki Arai

发明人： Yasuhiro Terai ,  Toshiaki Arai

IPC分类号： H01L27/14

CPC分类号： H01L29/7869 ,  H01L27/1244 ,  H01L27/3262 ,  H01L29/42384

摘要： Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode.

摘要翻译： 本文公开了一种显示装置，包括：薄膜晶体管; 和布线层; 其中所述薄膜晶体管包括半导体层，与所述半导体层相对设置的栅极电极，所述栅极电极的厚度与所述布线层的厚度不同，以及所述半导体层和所述栅电极之间的栅极绝缘膜。