公开(公告)号：US09299796B2

公开(公告)日：2016-03-29

申请号：US14619594

申请日：2015-02-11

申请人： National Central University

发明人： Pei-Wen Li ,  Wei-Ting Lai ,  Ting-Chia Hsu ,  Kuo-Ching Yang ,  Po-Hsiang Liao ,  Thomas George

IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/3065

CPC分类号： H01L29/42376 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/28114 ,  H01L21/3065 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/66613

摘要： A method for manufacturing a metal-oxide-semiconductor (MOS) gate stack structure in an insta-MOS field-effect-transistor (i-MOSFET) includes the following steps of: forming a silicon nitride layer over a silicon substrate; forming a nanopillar structure including a silicon-germanium alloy layer in contact with the silicon nitride layer; and performing a thermal oxidation process on the nanopillar structure to cause germanium atoms in the silicon-germanium alloy layer to penetrate the underneath silicon nitride layer to form a silicon-germanium shell layer in contact with the silicon substrate and a germanium nanosphere located over the silicon germanium shell layer, and to form a separating layer between the silicon-germanium shell layer and the germanium nanosphere by oxidizing silicon atoms from the silicon nitride layer or the silicon substrate, thereby forming a germanium/silicon dioxide/silicon-germanium i-MOS gate stack structure capable of solving interfacial issues between silicon and germanium and between germanium and the gate dielectric.

摘要翻译： 本实施例的MOS场效应晶体管（i-MOSFET）中的金属氧化物半导体（MOS）栅极叠层结构的制造方法包括以下步骤：在硅衬底上形成氮化硅层; 形成包括与所述氮化硅层接触的硅 - 锗合金层的纳米柱结构; 以及对所述纳米柱结构进行热氧化处理以使所述硅 - 锗合金层中的锗原子穿透所述氮化硅层下面以形成与所述硅衬底接触的硅 - 锗壳层和位于所述硅上的锗纳米球 锗壳层，并且通过从氮化硅层或硅衬底氧化硅原子在硅 - 锗壳层和锗纳米球之间形成分离层，从而形成锗/二氧化硅/硅 - 锗i-MOS栅极 堆叠结构能够解决硅与锗之间以及锗与栅极电介质之间的界面问题。

公开(公告)号：US20160013283A1

公开(公告)日：2016-01-14

申请号：US14619594

申请日：2015-02-11

申请人： National Central University

发明人： Pei-Wen Li ,  Wei-Ting Lai ,  Ting-Chia Hsu ,  Kuo-Ching Yang ,  Po-Hsiang Liao ,  Thomas George

IPC分类号： H01L29/423 ,  H01L21/3065 ,  H01L21/28 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/42376 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/28114 ,  H01L21/3065 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/66613

摘要： A method for manufacturing a metal-oxide-semiconductor (MOS) gate stack structure in an insta-MOS field-effect-transistor (i-MOSFET) includes the following steps of: forming a silicon nitride layer over a silicon substrate; forming a nanopillar structure including a silicon-germanium alloy layer in contact with the silicon nitride layer; and performing a thermal oxidation process on the nanopillar structure to cause germanium atoms in the silicon-germanium alloy layer to penetrate the underneath silicon nitride layer to form a silicon-germanium shell layer in contact with the silicon substrate and a germanium nanosphere located over the silicon germanium shell layer, and to form a separating layer between the silicon-germanium shell layer and the germanium nanosphere by oxidizing silicon atoms from the silicon nitride layer or the silicon substrate, thereby forming a germanium/silicon dioxide/silicon-germanium i-MOS gate stack structure capable of solving interfacial issues between silicon and germanium and between germanium and the gate dielectric.

摘要翻译： 本实施例的MOS场效应晶体管（i-MOSFET）中的金属氧化物半导体（MOS）栅极叠层结构的制造方法包括以下步骤：在硅衬底上形成氮化硅层; 形成包括与所述氮化硅层接触的硅 - 锗合金层的纳米柱结构; 以及对所述纳米柱结构进行热氧化处理以使所述硅 - 锗合金层中的锗原子穿透所述氮化硅层下面以形成与所述硅衬底接触的硅 - 锗壳层和位于所述硅上的锗纳米球 锗壳层，并且通过从氮化硅层或硅衬底氧化硅原子在硅 - 锗壳层和锗纳米球之间形成分离层，从而形成锗/二氧化硅/硅 - 锗i-MOS栅极 堆叠结构能够解决硅与锗之间以及锗与栅极电介质之间的界面问题。