Infrared anti-reflection film structure

    公开(公告)号:US10591646B2

    公开(公告)日:2020-03-17

    申请号:US15847925

    申请日:2017-12-20

    Abstract: An infrared anti-reflection film structure, an anti-reflection film layer, including a material of zinc oxide, comprising a top anti-reflection film layer and a bottom anti-reflection film layer, wherein the top anti-reflection film layer is disposed on a top side of the base material and the bottom anti-reflection film layer is disposed on a bottom side of the base material; and the base material is manufactured by a floating zone crystal growth method. Through the silicon base material manufactured by the high purity crystal growth method, the silicon base material replaces germanium as the high refractive index material and base material. And coating the anti-reflection film layer on the surface of the silicon base material, so as to apply the infrared anti-reflection film structure to the thermal imaging technology.

    High-precision non-contact temperature measurement device

    公开(公告)号:US11885690B2

    公开(公告)日:2024-01-30

    申请号:US17124523

    申请日:2020-12-17

    CPC classification number: G01J5/068 G01J5/80 G01J2005/0077

    Abstract: A high-precision non-contact temperature measurement device includes: a thermal insulation box made of a thermal insulation material and having therein a receiving space; a dynamic constant-temperature feedback control module for controlling temperature of the receiving space; and a non-temperature-sensing thermal imager disposed in the receiving space. The device achieves system thermal insulation within a non-contact temperature measurement gauge, maintains the overall closed system dynamically at constant temperature, compensates for effects of internal chip self-heating effect and visual field background temperature variation, and finally calculates average temperature of surfaces of a target precisely with an imaging, non-contact temperature measurement gauge and a temperature calibration algorithm widely used in thermal-imaging non-contact temperature measurement.

    Infrared Anti-Reflection Film Structure
    6.
    发明申请

    公开(公告)号:US20190187334A1

    公开(公告)日:2019-06-20

    申请号:US15847925

    申请日:2017-12-20

    Abstract: An infrared anti-reflection film structure, an anti-reflection film layer, including a material of zinc oxide, comprising a top anti-reflection film layer and a bottom anti-reflection film layer, wherein the top anti-reflection film layer is disposed on a top side of the base material and the bottom anti-reflection film layer is disposed on a bottom side of the base material; and the base material is manufactured by a floating zone crystal growth method. Through the silicon base material manufactured by the high purity crystal growth method, the silicon base material replaces germanium as the high refractive index material and base material. And coating the anti-reflection film layer on the surface of the silicon base material, so as to apply the infrared anti-reflection film structure to the thermal imaging technology.

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