公开(公告)号：US09825180B2

公开(公告)日：2017-11-21

申请号：US15248567

申请日：2016-08-26

Applicant: National Institute for Materials Science

Inventor： Toshihide Nabatame ,  Kazuhito Tsukagoshi ,  Shinya Aikawa ,  Toyohiro Chikyo

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/40 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/40 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78693

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

公开(公告)号：US09741864B2

公开(公告)日：2017-08-22

申请号：US14889919

申请日：2014-05-02

Applicant: National Institute for Materials Science

Inventor： Toshihide Nabatame ,  Kazuhito Tsukagoshi ,  Shinya Aikawa

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/40 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/40 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78693

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

公开(公告)号：US20160365455A1

公开(公告)日：2016-12-15

申请号：US15248567

申请日：2016-08-26

Applicant: National Institute for Materials Science

Inventor： Toshihide Nabatame ,  Kazuhito Tsukagoshi ,  Shinya Aikawa ,  Toyohiro Chikyo

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/40 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78693

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

Abstract translation: 本发明提供一种薄膜晶体管及其制造方法，其中诸如漏极电流和阈值电压的晶体管特性得到改善。 本发明提供一种具有源电极（108），漏电极（109），半导体层（105），栅电极（103）和绝缘层（104）的薄膜晶体管。 其中，所述半导体层（105）含有复合金属氧化物，所述复合金属氧化物通过向第一金属氧化物中添加比所述第一金属氧化物的氧解离能大至少200kJ / mol的氧解离能的氧化物而得到， 的氧空位被控制; 并且绝缘层（104）设置有SiO 2层，高介电常数第一层和高电容率第二层，由此在SiO 2层和高介电常数层之间的边界处产生的偶极子用于控制 阈值电压。