公开(公告)号：US10267756B2

公开(公告)日：2019-04-23

申请号：US15327103

申请日：2015-07-21

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin Kawakita ,  Tadashi Shinohara ,  Toyohiro Chikyo ,  Toshihide Nabatame ,  Akihiko Ohi ,  Tomoko Ohki

IPC: G01N27/04 ,  G01N17/04 ,  G01N27/12 ,  G01N27/22 ,  G01N17/00

Abstract: A dryness/wetness responsive sensor having decreased size, and improved sensitivity and responsiveness. The present invention comprises a thin wire of a first metal and a thin wire of a second metal, which is different from the first metal, wherein the thin wires run in juxtaposition with each other on an insulating substrate, and wherein the spacing between the first thin wire and the second thin wire is in the range of 5 nm or more and less than 20 μm.

公开(公告)号：US20160365455A1

公开(公告)日：2016-12-15

申请号：US15248567

申请日：2016-08-26

Applicant: National Institute for Materials Science

Inventor： Toshihide Nabatame ,  Kazuhito Tsukagoshi ,  Shinya Aikawa ,  Toyohiro Chikyo

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/40 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78693

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

Abstract translation: 本发明提供一种薄膜晶体管及其制造方法，其中诸如漏极电流和阈值电压的晶体管特性得到改善。 本发明提供一种具有源电极（108），漏电极（109），半导体层（105），栅电极（103）和绝缘层（104）的薄膜晶体管。 其中，所述半导体层（105）含有复合金属氧化物，所述复合金属氧化物通过向第一金属氧化物中添加比所述第一金属氧化物的氧解离能大至少200kJ / mol的氧解离能的氧化物而得到， 的氧空位被控制; 并且绝缘层（104）设置有SiO 2层，高介电常数第一层和高电容率第二层，由此在SiO 2层和高介电常数层之间的边界处产生的偶极子用于控制 阈值电压。

公开(公告)号：US20150104662A1

公开(公告)日：2015-04-16

申请号：US14364808

申请日：2012-12-13

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Michiko Sasaki ,  Masahiro Goto ,  Akira Kasahara ,  Toyohiro Chikyo ,  Masahiro Tosa

IPC: C08K3/22

CPC classification number: C08K3/22 ,  B82Y30/00 ,  B82Y40/00 ,  C08K3/013 ,  C08K5/0025 ,  C08K5/01 ,  C08K2003/2265 ,  C08K2003/2268 ,  C08K2201/01 ,  C08L2205/16 ,  Y10T428/298 ,  Y10T428/31938

Abstract: Provided is a polymer nanowire which contains nanoparticles so as to have new functionalities.A thin film 103 is formed on a substrate 101 and includes functional nanoparticles and polymers, and further includes a photosensitive pigment as required. The thin film 103 is irradiated with a pulsed laser. This causes a polymer nanowire 109 containing the functional nanoparticles to grow from a surface of the thin film 103.

Abstract translation: 提供了含有纳米颗粒以具有新功能的聚合物纳米线。 薄膜103形成在基板101上，并且包括功能性纳米粒子和聚合物，并且还包括需要的光敏颜料。 用脉冲激光照射薄膜103。 这导致含有功能性纳米粒子的聚合物纳米线109从薄膜103的表面生长。

公开(公告)号：US11454603B2

公开(公告)日：2022-09-27

申请号：US16306967

申请日：2017-06-06

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin Kawakita ,  Toyohiro Chikyo

IPC: G01N25/68 ,  G01N27/04 ,  G01N27/416

Abstract: The purpose of the present invention is to realize a dew point measurement in which the generation of dew condensation is directly detected and the detection can be performed without using any optical system. In particular, the purpose of the present invention is to realize a dew point measuring device that is compact and has a high sensitivity. According to one embodiment of the present invention, a sudden change in current values before and after the dew point is detected by detecting the dew condensation to detect a galvanic current that flows due to a water droplet attached onto a surface of an insulating substrate on which thin wires of dissimilar metals are juxtaposed, and by controlling the temperature on the surface of the substrate. In this way, the dew point measurement in which the dew point can be directly measured and a measurement with simple configuration and high accuracy can be performed can be realized.

公开(公告)号：US09825180B2

公开(公告)日：2017-11-21

申请号：US15248567

申请日：2016-08-26

Applicant: National Institute for Materials Science

Inventor： Toshihide Nabatame ,  Kazuhito Tsukagoshi ,  Shinya Aikawa ,  Toyohiro Chikyo

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/40 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/40 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78693

Abstract: The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage.

公开(公告)号：US09703197B2

公开(公告)日：2017-07-11

申请号：US15024407

申请日：2014-09-25

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin Kawakita ,  Toyohiro Chikyo ,  Takayuki Nakane

IPC: G03F7/20 ,  G03F7/32 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/091 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0278

Abstract: A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.

公开(公告)号：US11163829B2

公开(公告)日：2021-11-02

申请号：US16485539

申请日：2018-02-07

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Michiko Yoshitake ,  Shinjiro Yagyu ,  Toyohiro Chikyo ,  Isao Kuwajima

IPC: G06F16/901 ,  G06F16/28 ,  G06F16/2457 ,  G06F30/17

Abstract: The present invention searches for, in order of priority, a combination of material property parameters having a significant relationship, from among arbitrary combinations of multiple material property parameters. The present invention comprises a database stored in a storage device, a graph generation step, a graph search step, and a prioritization step, wherein the database stores multiple pairs of material property parameters having mutual relationship; the graph generation step includes generating a graph in which the multiple material property parameters stored in the database are represented as nodes, and inter-node spaces corresponding to the respective material property parameter pairs each being stored as having a relationship therebetween are represented as edges; the graph search step includes searching the graph on the basis of a given search condition and presenting multiple related material properties or inter-material property relationship paths representing relationships between material properties; and the prioritization step includes obtaining, by using information about one or both of the nodes and the edges, priority for the presented multiple related material properties or inter-material property relationship paths, and outputting a result in the descending order of priority.

公开(公告)号：US11138772B2

公开(公告)日：2021-10-05

申请号：US16306575

申请日：2016-12-09

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Michiko Yoshitake ,  Shinjiro Yagyu ,  Toyohiro Chikyo ,  Isao Kuwajima

IPC: G06T11/20 ,  G06F16/90 ,  G06F16/901

Abstract: Provided are a search system and a search method capable of searching an unknown combination of material property parameters having a significant relationship based on already known relationships from among multiple arbitrary combinations of material property parameters. The search system includes a database, a graph generator, and a graph searcher, and is configured as follows: the database stores the plurality of pairs of material property parameters having mutual relationships, and the graph generator generates a graph in which material property parameters stored in the database are nodes, and an inter-node corresponding to the pairs of material property parameters stored to have mutual relationships is an edge. The graph searcher searches the graph generated by the graph generator based on a given search condition and outputs a search result.

公开(公告)号：US09957371B2

公开(公告)日：2018-05-01

申请号：US14364808

申请日：2012-12-13

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Michiko Sasaki ,  Masahiro Goto ,  Akira Kasahara ,  Toyohiro Chikyo ,  Masahiro Tosa

IPC: C08K5/01 ,  C08K3/22 ,  B82Y30/00 ,  B82Y40/00 ,  C08K3/00 ,  C08K5/00

CPC classification number: C08K3/22 ,  B82Y30/00 ,  B82Y40/00 ,  C08K3/013 ,  C08K5/0025 ,  C08K5/01 ,  C08K2003/2265 ,  C08K2003/2268 ,  C08K2201/01 ,  C08L2205/16 ,  Y10T428/298 ,  Y10T428/31938

Abstract: Provided is a polymer nanowire which contains nanoparticles so as to have new functionalities. A thin film is formed on a substrate and includes functional nanoparticles and polymers, and further includes a photosensitive pigment as required. The thin film is irradiated with a pulsed laser. This causes a polymer nanowire containing the functional nanoparticles to grow from a surface of the thin film.

公开(公告)号：US09622346B2

公开(公告)日：2017-04-11

申请号：US14438004

申请日：2013-10-21

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jin Kawakita ,  Toyohiro Chikyo ,  Yasuo Hashimoto ,  Barbara Horvath

IPC: C09D17/00 ,  H05K1/09 ,  C09D201/00 ,  H01B1/22 ,  C09J7/02 ,  C08G73/02 ,  H01L21/768 ,  C08K3/08 ,  C08L65/00 ,  C09J165/00 ,  C08L79/02 ,  H05K3/40 ,  H01L23/498

CPC classification number: H05K1/095 ,  C08G73/0266 ,  C08G2261/3221 ,  C08G2261/3223 ,  C08G2261/43 ,  C08G2261/964 ,  C08K3/08 ,  C08L65/00 ,  C08L79/02 ,  C09D17/00 ,  C09D201/00 ,  C09J7/20 ,  C09J165/00 ,  C09J2205/102 ,  C09J2465/00 ,  H01B1/22 ,  H01L21/76898 ,  H01L23/49883 ,  H05K1/097 ,  H05K3/4069 ,  H05K2201/032 ,  Y10T428/24339

Abstract: A conductive polymer-metal complex becomes to be adhered simply and strongly on the surface of a substrate such as PTFE. By subjecting a solution containing a monomer which provides a conductive polymer, an anion, and a metal ions such as Ag+, Cu2+, Cu+ and the like to an irradiation with light having an energy required for exciting an electron to an energy level capable of reducing the metal ion, such as ultraviolet light, under an appropriated condition, thereby precipitating the conductive polymer-metal complex as being dispersed in the reaction liquid. By supplying this dispersion liquid onto various substrates, the complex microparticles in the dispersion liquid enter into and mate with the narrow holes on the surface of the substrate. As a result, the complex precipitate formed on the surface of the substrate and the substrate can be adhered strongly to each other.