公开(公告)号：US20250089356A1

公开(公告)日：2025-03-13

申请号：US18926357

申请日：2024-10-25

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Atsushi YAO ,  Mitsuo OKAMOTO ,  Fumiki KATO ,  Hiroshi SATO ,  Shinsuke HARADA ,  Hiroshi HOZOJI ,  Shinji SATO

IPC: H01L27/092 ,  H01L23/522 ,  H01L25/065 ,  H01L29/16 ,  H03K17/0412

Abstract: A change in switching time due to temperature change is suppressed. A switching circuitry is provided with a resistance component having opposite characteristics to temperature dependence of a gate current of a power transistor which is switching-controlled by the switching circuitry, and a change in a gate current due to the temperature change is suppressed by a change in the above-described resistance component due to the temperature change.