公开(公告)号：US20160322282A1

公开(公告)日：2016-11-03

申请号：US14929060

申请日：2015-10-30

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Masahiro AOYAGI ,  Tung Thanh BUI ,  Naoya WATANABE ,  Fumiki KATO ,  Katsuya KIKUCHI

IPC: H01L23/48 ,  H01L21/288 ,  H01L21/02 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/53228 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).

公开(公告)号：US20250089356A1

公开(公告)日：2025-03-13

申请号：US18926357

申请日：2024-10-25

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Atsushi YAO ,  Mitsuo OKAMOTO ,  Fumiki KATO ,  Hiroshi SATO ,  Shinsuke HARADA ,  Hiroshi HOZOJI ,  Shinji SATO

IPC: H01L27/092 ,  H01L23/522 ,  H01L25/065 ,  H01L29/16 ,  H03K17/0412

Abstract: A change in switching time due to temperature change is suppressed. A switching circuitry is provided with a resistance component having opposite characteristics to temperature dependence of a gate current of a power transistor which is switching-controlled by the switching circuitry, and a change in a gate current due to the temperature change is suppressed by a change in the above-described resistance component due to the temperature change.