公开(公告)号：US20250089356A1

公开(公告)日：2025-03-13

申请号：US18926357

申请日：2024-10-25

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Atsushi YAO ,  Mitsuo OKAMOTO ,  Fumiki KATO ,  Hiroshi SATO ,  Shinsuke HARADA ,  Hiroshi HOZOJI ,  Shinji SATO

IPC: H01L27/092 ,  H01L23/522 ,  H01L25/065 ,  H01L29/16 ,  H03K17/0412

Abstract: A change in switching time due to temperature change is suppressed. A switching circuitry is provided with a resistance component having opposite characteristics to temperature dependence of a gate current of a power transistor which is switching-controlled by the switching circuitry, and a change in a gate current due to the temperature change is suppressed by a change in the above-described resistance component due to the temperature change.

公开(公告)号：US20240266351A1

公开(公告)日：2024-08-08

申请号：US18563937

申请日：2022-04-28

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Mitsuo OKAMOTO ,  Atsushi YAO ,  Hiroshi SATO ,  Shinsuke HARADA

IPC: H01L27/092 ,  H01L21/04 ,  H01L21/82 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0922 ,  H01L21/0465 ,  H01L21/049 ,  H01L21/8213 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/7816

Abstract: A semiconductor device includes, on an n-type semiconductor substrate, a power transistor, an n-type transistor, and a p-type transistor on a laminated semiconductor substrate that laminates an n-type drift layer, a p-type; the power transistor has a trench gate electrode penetrating through the base layer; the p-type transistor is formed in an n-type well region formed in the base layer, and the n-type transistor is formed in a p-type well region further formed in the base layer or n-type well region; and a p-type impurity concentration of the buried channel region of the p-type transistor is equal to a p-type impurity concentration of the base layer.