公开(公告)号：US09818645B2

公开(公告)日：2017-11-14

申请号：US15251470

申请日：2016-08-30

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Masahiro Aoyagi ,  Tung Thanh Bui ,  Naoya Watanabe ,  Katsuya Kikuchi ,  Wei Feng

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01L21/76895 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53228 ,  H01L23/535 ,  H01L2224/16145 ,  H01L2224/73204

Abstract: Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.