公开(公告)号：US09818645B2

公开(公告)日：2017-11-14

申请号：US15251470

申请日：2016-08-30

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Masahiro Aoyagi ,  Tung Thanh Bui ,  Naoya Watanabe ,  Katsuya Kikuchi ,  Wei Feng

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01L21/76895 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53228 ,  H01L23/535 ,  H01L2224/16145 ,  H01L2224/73204

Abstract: Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.

公开(公告)号：US09984956B2

公开(公告)日：2018-05-29

申请号：US14929060

申请日：2015-10-30

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Masahiro Aoyagi ,  Tung Thanh Bui ,  Naoya Watanabe ,  Fumiki Kato ,  Katsuya Kikuchi

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L21/288

CPC classification number: H01L23/481 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/53228 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).