公开(公告)号：US09818645B2

公开(公告)日：2017-11-14

申请号：US15251470

申请日：2016-08-30

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Masahiro Aoyagi ,  Tung Thanh Bui ,  Naoya Watanabe ,  Katsuya Kikuchi ,  Wei Feng

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01L21/76895 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53228 ,  H01L23/535 ,  H01L2224/16145 ,  H01L2224/73204

Abstract: Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.

公开(公告)号：US20150235984A1

公开(公告)日：2015-08-20

申请号：US14428635

申请日：2013-08-29

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Masahiro Aoyagi ,  Thanh Tung Bui ,  Motohiro Suzuki ,  Naoya Watanabe ,  Fumiki Kato ,  Lai Na Ma ,  Shunsuke Nemoto

IPC: H01L23/00 ,  B23K20/10 ,  H01L25/00

CPC classification number: H01L24/81 ,  B23K20/10 ,  H01L23/49811 ,  H01L23/544 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/1145 ,  H01L2224/11472 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/75343 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81444 ,  H01L2224/81895 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/37001 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A method of manufacturing a semiconductor device according to the present invention comprises: a bump forming step of forming a bump electrode 100 on a semiconductor chip 1, the bump electrode 100 protruding in a substantially conical shape; a pad forming step of forming a pad electrode 200 on a substrate 10, the pad electrode 200 having a recess 210 with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape; a pressing step of pressing the bump electrode 100 and the pad electrode 200 in a direction which brings them closer to each other, with the bump electrode 100 being inserted in the recess 210 so that the central axis of the bump electrode 100 and the central axis of the recess 210 coincide with each other; and an ultrasonic joining step of joining the bump electrode 100 and the pad electrode 200 by vibrating at least one of the bump electrode 100 and the pad electrode 200 using ultrasonic waves.

Abstract translation: 根据本发明的制造半导体器件的方法包括：凸块形成步骤，在半导体芯片1上形成突起电极100，突起电极100以大致圆锥形的形式突出; 衬垫形成步骤，在衬底10上形成焊盘电极200，焊盘电极200具有凹槽210，其内侧表面限定大致棱锥形状或棱镜形状; 将突起电极100和焊盘电极200沿使其彼此更靠近的方向按压凸起电极100和凹凸电极100的中心轴线的中心轴线的按压步骤 的凹部210彼此重合; 以及通过使用超声波使凸起电极100和焊盘电极200中的至少一个振动来接合凸起电极100和焊盘电极200的超声波接合步骤。

公开(公告)号：US11270968B2

公开(公告)日：2022-03-08

申请号：US16973020

申请日：2019-05-30

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Masaru Hashino ,  Ying Ying Lim ,  Hiroshi Nakagawa ,  Masahiro Aoyagi ,  Katsuya Kikuchi

IPC: H01L23/13 ,  H01L23/00

Abstract: The purpose of the present invention is to provide an electronic circuit connection method and an electronic circuit capable of improving the reliability of electrical connection.
A connection method for an electronic circuit 100 includes: a process of forming a first metal bumps 30 and a second metal bump 40, each of which has a cone shape; and a process of joining a first electrode pad 12 and a third electrode pad 22 by the first metal bump 30 and joining a second electrode pad 13 and a fourth electrode pad 23 by the second metal bump 40, wherein at least one region of between a first region 11a and a second region 11b in a first connection surface 11 and between a third region 21a and a fourth region 21b in a second connection surface 21 has a step 11c, and the first metal bump 30 and the second metal bump 40 have different heights so as to correct a height H1 of the step 11c.

公开(公告)号：US09984956B2

公开(公告)日：2018-05-29

申请号：US14929060

申请日：2015-10-30

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Masahiro Aoyagi ,  Tung Thanh Bui ,  Naoya Watanabe ,  Fumiki Kato ,  Katsuya Kikuchi

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L21/288

CPC classification number: H01L23/481 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/53228 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).

公开(公告)号：US09627347B2

公开(公告)日：2017-04-18

申请号：US14428635

申请日：2013-08-29

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Masahiro Aoyagi ,  Thanh Tung Bui ,  Motohiro Suzuki ,  Naoya Watanabe ,  Fumiki Kato ,  Lai Na Ma ,  Shunsuke Nemoto

IPC: H01L23/00 ,  H01L25/00 ,  B23K20/10

CPC classification number: H01L24/81 ,  B23K20/10 ,  H01L23/49811 ,  H01L23/544 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L25/50 ,  H01L2224/0345 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/1145 ,  H01L2224/11472 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/75343 ,  H01L2224/75745 ,  H01L2224/75753 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2224/81205 ,  H01L2224/81444 ,  H01L2224/81895 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/37001 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A method of manufacturing a semiconductor device according to the present invention comprises: a bump forming step of forming a bump electrode 100 on a semiconductor chip 1, the bump electrode 100 protruding in a substantially conical shape; a pad forming step of forming a pad electrode 200 on a substrate 10, the pad electrode 200 having a recess 210 with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape; a pressing step of pressing the bump electrode 100 and the pad electrode 200 in a direction which brings them closer to each other, with the bump electrode 100 being inserted in the recess 210 so that the central axis of the bump electrode 100 and the central axis of the recess 210 coincide with each other; and an ultrasonic joining step of joining the bump electrode 100 and the pad electrode 200 by vibrating at least one of the bump electrode 100 and the pad electrode 200 using ultrasonic waves.