公开(公告)号：US10431303B2

公开(公告)日：2019-10-01

申请号：US15827626

申请日：2017-11-30

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Takayuki Nozaki ,  Yoshishige Suzuki ,  Shinji Yuasa ,  Yoichi Shiota ,  Takurou Ikeura ,  Hiroki Noguchi ,  Kazutaka Ikegami

IPC: G11C13/00 ,  G11C11/16

Abstract: A resistance change type memory includes a variable resistance element connected between first and second bit lines and a write control circuit including first and second transistors each including a terminal connected to the first bit line. The write control circuit controls write to the variable resistance element. The write control circuit supplies a second voltage to the first bit line with a first pulse width via the second transistor in the ON state after supplying a first voltage to the first bit line via the first transistor.