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    Magnetic memory device and method for controlling a write pulse
    5.
    发明授权
    Magnetic memory device and method for controlling a write pulse 有权

    公开(公告)号：US11031062B2

    公开(公告)日：2021-06-08

    申请号：US16603343

    申请日：2018-04-04

    Applicant: National Institute of Advanced Industrial Science and Technology

    Inventor： Yoichi Shiota ,  Takayuki Nozaki ,  Shinji Yuasa

    IPC: G11C11/16 ,  H01L43/02 ,  H01F10/32 ,  H01L43/10

    Abstract: According to one embodiment, a magnetic memory device includes a stacked body and a controller. The stacked body includes a first conductive layer, a second conductive layer, a first magnetic layer provided between the first conductive layer and the second conductive layer, a second magnetic layer provided between the first magnetic layer and the second conductive layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A resistance value per unit area of the nonmagnetic layer exceeds 20 Ωμm2. The controller is electrically connected to the first conductive layer and the second conductive layer, and supplies a write pulse to the stacked body in a first operation. The write pulse includes a rise period, a potential of the write pulse changing from a first potential toward a second potential in the rise period, an intermediate period of the second potential after the rise period, and a fall period after the intermediate period, the potential of the write pulse changing from the second potential toward the first potential in the fall period. A duration of the fall period is longer than a duration of the rise period.

    HIGH-FREQUENCY PHASE-LOCKED OSCILLATION CIRCUIT
    7.
    发明申请
    HIGH-FREQUENCY PHASE-LOCKED OSCILLATION CIRCUIT 审中-公开

    公开(公告)号：US20180302035A1

    公开(公告)日：2018-10-18

    申请号：US15569500

    申请日：2016-04-27

    Applicant: National Institute of Advanced Industrial Science and Technology

    Inventor： Shingo Tamaru ,  Hitoshi Kubota ,  Akio Fukushima ,  Shinji Yuasa

    IPC: H03B15/00 ,  H03L7/099 ,  H03L7/093 ,  H01F10/32 ,  H01L43/02

    CPC classification number: H03B15/006 ,  H01F10/3259 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/00 ,  H03L7/093 ,  H03L7/099 ,  H03L7/18

    Abstract: The present invention provides a high-frequency phase-locked oscillation circuit having an extremely narrow peak width and a stable frequency so that a high-frequency wave that is oscillated by the MR element solves a problem of a large peak width of oscillation spectrum. The high-frequency phase-locked oscillation circuit is achieved by providing: a magnetoresistive element 6 that oscillates a high-frequency wave with an oscillating frequency fout; a reference signal source 1 that outputs a reference signal with a reference frequency fref; a phase-locked loop circuit having a phase comparator 3, a loop filer 4, and a frequency divider 9; an adder 5 that adds a phase error signal A output from the loop filter and a bias voltage B for oscillating the high-frequency wave from the magnetoresistive element, and that inputs an added bias voltage (A+B) to the magnetoresistive element 6; and a filter 7 provided between the frequency divider 9 and the magnetoresistive element 6 in a region closer to an input side of the frequency divider 9, the filter cutting off the reference frequency fref while allowing the oscillating frequency fout to pass through the filter.

    High-frequency phase-locked oscillation circuit
    9.
    发明授权
    High-frequency phase-locked oscillation circuit 有权

    公开(公告)号：US10432144B2

    公开(公告)日：2019-10-01

    申请号：US15569500

    申请日：2016-04-27

    Applicant: National Institute of Advanced Industrial Science and Technology

    Inventor： Shingo Tamaru ,  Hitoshi Kubota ,  Akio Fukushima ,  Shinji Yuasa

    IPC: H03B15/00 ,  H01L43/08 ,  H01L29/82 ,  H03L7/099 ,  H01F10/32 ,  H01L43/02 ,  H03L7/093 ,  H01L43/10 ,  H03L7/18

    Abstract: A high-frequency phase-locked oscillation circuit having an extremely narrow peak width and a stable frequency so that a high-frequency wave that is oscillated by the MR element solves a problem of a large peak width of oscillation spectrum. The high-frequency phase-locked oscillation circuit includes a magnetoresistive element that oscillates a high-frequency wave with an oscillating frequency; a reference signal source that outputs a reference signal with a reference frequency; a phase-locked loop circuit having a phase comparator, a loop filter, and a frequency divider; an adder that adds a phase error signal output from the loop filter and a bias voltage for oscillating the high-frequency wave from the magnetoresistive element, and that inputs an added bias voltage to the magnetoresistive element; and a filter provided between the frequency divider and the magnetoresistive element.

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