公开(公告)号：US11031062B2

公开(公告)日：2021-06-08

申请号：US16603343

申请日：2018-04-04

申请人： National Institute of Advanced Industrial Science and Technology

发明人： Yoichi Shiota ,  Takayuki Nozaki ,  Shinji Yuasa

IPC分类号： G11C11/16 ,  H01L43/02 ,  H01F10/32 ,  H01L43/10

摘要： According to one embodiment, a magnetic memory device includes a stacked body and a controller. The stacked body includes a first conductive layer, a second conductive layer, a first magnetic layer provided between the first conductive layer and the second conductive layer, a second magnetic layer provided between the first magnetic layer and the second conductive layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A resistance value per unit area of the nonmagnetic layer exceeds 20 Ωμm2. The controller is electrically connected to the first conductive layer and the second conductive layer, and supplies a write pulse to the stacked body in a first operation. The write pulse includes a rise period, a potential of the write pulse changing from a first potential toward a second potential in the rise period, an intermediate period of the second potential after the rise period, and a fall period after the intermediate period, the potential of the write pulse changing from the second potential toward the first potential in the fall period. A duration of the fall period is longer than a duration of the rise period.

公开(公告)号：US10431303B2

公开(公告)日：2019-10-01

申请号：US15827626

申请日：2017-11-30

申请人： National Institute of Advanced Industrial Science and Technology

发明人： Takayuki Nozaki ,  Yoshishige Suzuki ,  Shinji Yuasa ,  Yoichi Shiota ,  Takurou Ikeura ,  Hiroki Noguchi ,  Kazutaka Ikegami

IPC分类号： G11C13/00 ,  G11C11/16

摘要： A resistance change type memory includes a variable resistance element connected between first and second bit lines and a write control circuit including first and second transistors each including a terminal connected to the first bit line. The write control circuit controls write to the variable resistance element. The write control circuit supplies a second voltage to the first bit line with a first pulse width via the second transistor in the ON state after supplying a first voltage to the first bit line via the first transistor.