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公开(公告)号：US20110183495A1
公开(公告)日：2011-07-28
申请号：US13011267
申请日：2011-01-21
IPC分类号： H01L21/762
CPC分类号： H01L21/2007 , H01L21/187
摘要： The invention relates to a process for annealing a structure that includes at least one wafer, with the annealing process including conducting a first annealing of the structure in an oxidizing atmosphere while holding the structure in contact with a holder in a first position in order to oxidize at least portion of the exposed surface of the structure, shifting the structure on the holder into a second position in which non-oxidized regions of the structure are exposed, and conducting a second annealing of the structure in an oxidizing atmosphere while holding the structure in the second position. The process provides an oxide layer on the structure.
摘要翻译： 本发明涉及退火包括至少一个晶片的结构的方法，退火工艺包括在氧化气氛中进行结构的第一退火，同时保持结构与第一位置的保持器接触以氧化 所述结构的暴露表面的至少一部分将所述保持器上的结构移动到其中暴露所述结构的非氧化区域的第二位置，并且在保持所述结构的同时在所述结构的氧化气氛中进行所述结构的第二退火 第二个位置。 该过程在结构上提供氧化物层。
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公开(公告)号：US08158487B2
公开(公告)日：2012-04-17
申请号：US13011267
申请日：2011-01-21
CPC分类号： H01L21/2007 , H01L21/187
摘要： The invention relates to a process for annealing a structure that includes at least one wafer, with the annealing process including conducting a first annealing of the structure in an oxidizing atmosphere while holding the structure in contact with a holder in a first position in order to oxidize at least portion of the exposed surface of the structure, shifting the structure on the holder into a second position in which non-oxidized regions of the structure are exposed, and conducting a second annealing of the structure in an oxidizing atmosphere while holding the structure in the second position. The process provides an oxide layer on the structure.
摘要翻译： 本发明涉及退火包括至少一个晶片的结构的方法，退火工艺包括在氧化气氛中进行结构的第一退火，同时保持结构与第一位置的保持器接触以氧化 所述结构的暴露表面的至少一部分将所述保持器上的结构移动到其中暴露所述结构的非氧化区域的第二位置，并且在保持所述结构的同时在所述结构的氧化气氛中进行所述结构的第二退火 第二个位置。 该过程在结构上提供氧化物层。
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公开(公告)号：US07807548B2
公开(公告)日：2010-10-05
申请号：US11827715
申请日：2007-07-13
IPC分类号： H01L21/30
CPC分类号： B81B3/001 , B81C1/00952 , B81C2201/115
摘要： The invention provides a method for forming a semiconductor component with a rough buried interface. The method includes providing a first semiconductor substrate having a first surface of roughness R1. The method further includes thermally oxidizing the first surface of the first semiconductor substrate to form an oxide layer defining an external oxide surface on the first semiconductor substrate and a buried oxide-semiconductor interface below the oxide surface, so that the buried oxide surface has a roughness R2 that is less than R1. The method also includes assembling the oxide surface of the first semiconductor substrate with a second substrate. The invention also provides a component formed according to the method of the invention.
摘要翻译： 本发明提供一种用于形成具有粗糙掩埋界面的半导体部件的方法。 该方法包括提供具有粗糙度R1的第一表面的第一半导体衬底。 该方法还包括热氧化第一半导体衬底的第一表面以形成限定第一半导体衬底上的外部氧化物表面的氧化物层和氧化物表面下方的掩埋氧化物半导体界面，使得掩埋氧化物表面具有粗糙度 R2小于R1。 该方法还包括用第二衬底组装第一半导体衬底的氧化物表面。 本发明还提供了根据本发明的方法形成的部件。
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公开(公告)号：US20080176381A1
公开(公告)日：2008-07-24
申请号：US11827709
申请日：2007-07-13
CPC分类号： B81C1/00952 , B81B3/001 , B81C2201/115
摘要： A process of forming a rough interface in a semiconductor substrate. The process includes the steps of depositing a material on a surface of the substrate, forming a zone of irregularities in the material, and forming a rough interface in the semiconductor substrate by a thermal oxidation of the material and a part of the substrate. Additionally, the surface of the oxidized material may be prepared and the surface may be assembled with a second substrate.
摘要翻译： 在半导体衬底中形成粗糙界面的工艺。 该方法包括以下步骤：在衬底的表面上沉积材料，在材料中形成不规则区域，并通过材料和衬底的一部分的热氧化在半导体衬底中形成粗糙界面。 此外，可以制备氧化材料的表面，并且表面可以与第二衬底组装。
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公开(公告)号：US08268703B2
公开(公告)日：2012-09-18
申请号：US11827709
申请日：2007-07-13
IPC分类号： H01L21/30
CPC分类号： B81C1/00952 , B81B3/001 , B81C2201/115
摘要： A process of forming a rough interface in a semiconductor substrate. The process includes the steps of depositing a material on a surface of the substrate, forming a zone of irregularities in the material, and forming a rough interface in the semiconductor substrate by a thermal oxidation of the material and a part of the substrate. Additionally, the surface of the oxidized material may be prepared and the surface may be assembled with a second substrate.
摘要翻译： 在半导体衬底中形成粗糙界面的工艺。 该方法包括以下步骤：在衬底的表面上沉积材料，在材料中形成不规则区域，并通过材料和衬底的一部分的热氧化在半导体衬底中形成粗糙界面。 此外，可以制备氧化材料的表面，并且表面可以与第二衬底组装。
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公开(公告)号：US20100032085A1
公开(公告)日：2010-02-11
申请号：US12564112
申请日：2009-09-22
IPC分类号： B32B38/10
CPC分类号： H01L21/76254
摘要： The disclosure relates to methods and systems for separating a membrane from a substrate. In accordance with a preferred embodiment, the method includes applying at least one member to the membrane by way of an adhesive, wherein the adhesive is applied to substantially less than the entirety of the surface of said membrane which is not facing the substrate. The method further includes separating at least a part of the membrane from the substrate by applying a force to the at least one member.
摘要翻译： 本公开涉及用于从基底分离膜的方法和系统。 根据优选实施方案，该方法包括通过粘合剂将至少一个构件施加到膜上，其中将粘合剂施加到基本上小于不面向基底的所述膜的整个表面。 该方法还包括通过向至少一个构件施加力将膜的至少一部分与基底分离。
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公开(公告)号：US20080176382A1
公开(公告)日：2008-07-24
申请号：US11827715
申请日：2007-07-13
IPC分类号： H01L21/30
CPC分类号： B81B3/001 , B81C1/00952 , B81C2201/115
摘要： The invention provides a method for forming a semiconductor component with a rough buried interface. The method includes providing a first semiconductor substrate having a first surface of roughness R1. The method further includes thermally oxidizing the first surface of the first semiconductor substrate to form an oxide layer defining an external oxide surface on the first semiconductor substrate and a buried oxide-semiconductor interface below the oxide surface, so that the buried oxide surface has a roughness R2 that is less than R1. The method also includes assembling the oxide surface of the first semiconductor substrate with a second substrate. The invention also provides a component formed according to the method of the invention.
摘要翻译： 本发明提供一种用于形成具有粗糙掩埋界面的半导体部件的方法。 该方法包括提供具有粗糙度R 1的第一表面的第一半导体衬底。 该方法还包括热氧化第一半导体衬底的第一表面以形成限定第一半导体衬底上的外部氧化物表面的氧化物层和氧化物表面下方的掩埋氧化物半导体界面，使得掩埋氧化物表面具有粗糙度 R 2小于R 1。 该方法还包括用第二衬底组装第一半导体衬底的氧化物表面。 本发明还提供了根据本发明的方法形成的部件。
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公开(公告)号：US20110076849A1
公开(公告)日：2011-03-31
申请号：US12851227
申请日：2010-08-05
IPC分类号： H01L21/465 , B32B38/10
CPC分类号： H01L21/76256 , H01L21/304 , H01L21/30608 , Y10T29/49117 , Y10T29/49126
摘要： A method of fabricating a multilayer substrate may include bonding a front face of a donor substrate to a front face of a receiver substrate by molecular adhesion to form a stack and applying a heat treatment to the stack to consolidate a bond interface between the donor substrate and the receiver substrate. The method may further include thinning a back face of the donor substrate, trimming a periphery of the donor substrate and at least a portion of a periphery of the receiver substrate, and etching the back face of the donor substrate, the periphery of the donor substrate, and the at least a portion of the periphery of the receiver substrate subsequent to thinning the back face of the donor substrate and trimming the periphery of the donor substrate and the at least a portion of the periphery of the receiver substrate.
摘要翻译： 制造多层基板的方法可以包括通过分子粘合将供体基板的前表面粘合到接收器基板的前表面以形成堆叠并对堆叠施加热处理以巩固施主基板与供体基板之间的键合界面 接收器基板。 该方法可以进一步包括使施主衬底的背面变薄，修整施主衬底的周边和接收器衬底的周边的至少一部分，以及蚀刻施主衬底的背面，施主衬底的周边 以及接收器基板的外围的至少一部分，然后使施主衬底的背面变薄并且修整施主衬底的周边和接收器衬底的周边的至少一部分。
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公开(公告)号：US08505197B2
公开(公告)日：2013-08-13
申请号：US12851227
申请日：2010-08-05
IPC分类号： H05K3/36
CPC分类号： H01L21/76256 , H01L21/304 , H01L21/30608 , Y10T29/49117 , Y10T29/49126
摘要： A method of fabricating a multilayer substrate may include bonding a front face of a donor substrate to a front face of a receiver substrate by molecular adhesion to form a stack and applying a heat treatment to the stack to consolidate a bond interface between the donor substrate and the receiver substrate. The method may further include thinning a back face of the donor substrate, trimming a periphery of the donor substrate and at least a portion of a periphery of the receiver substrate, and etching the back face of the donor substrate, the periphery of the donor substrate, and the at least a portion of the periphery of the receiver substrate subsequent to thinning the back face of the donor substrate and trimming the periphery of the donor substrate and the at least a portion of the periphery of the receiver substrate.
摘要翻译： 制造多层基板的方法可以包括通过分子粘合将供体基板的前表面粘合到接收器基板的前表面以形成堆叠并对堆叠施加热处理以巩固施主基板与供体基板之间的键合界面 接收器基板。 该方法可以进一步包括使施主衬底的背面变薄，修整施主衬底的周边和接收器衬底的周边的至少一部分，以及蚀刻施主衬底的背面，施主衬底的周边 以及接收器基板的外围的至少一部分，然后使施主衬底的背面变薄并且修整施主衬底的周边和接收器衬底的周边的至少一部分。
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公开(公告)号：US08927320B2
公开(公告)日：2015-01-06
申请号：US13380731
申请日：2010-06-11
IPC分类号： H01L21/762 , H01L31/02 , B32B37/10 , H01L21/20
CPC分类号： H01L21/2007 , H01L21/76251 , H01L21/76254 , Y10T156/17
摘要： A method of bonding by molecular bonding between at least one lower wafer and an upper wafer comprises positioning the upper wafer on the lower wafer. In accordance with the invention, a contact force is applied to a peripheral side of at least one of the two wafers in order to initiate a bonding wave between the two wafers.
摘要翻译： 通过分子键合在至少一个下晶片和上晶片之间进行键合的方法包括将上晶片定位在下晶片上。 根据本发明，接触力施加到两个晶片中的至少一个的周边侧，以便引发两个晶片之间的结合波。
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