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    Substrate layer cutting device and method
    1.
    发明授权
    Substrate layer cutting device and method 有权
    基材层切割装置及方法

    公开(公告)号：US07406994B2

    公开(公告)日：2008-08-05

    申请号：US11668799

    申请日：2007-01-30

    申请人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cécile Berne ,  Olivier Rayssac

    发明人： Muriel Martinez ,  Thierry Barge ,  Alain Soubie ,  Chrystelle Lagahe-Blanchard ,  Cécile Berne ,  Olivier Rayssac

    IPC分类号： B32B38/10

    CPC分类号： H01L21/67092 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0064 ,  B28D5/0082 ,  Y10S156/921 ,  Y10T83/7607 ,  Y10T83/7667 ,  Y10T156/1142 ,  Y10T156/1179 ,  Y10T156/1967 ,  Y10T156/1983

    摘要： An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch located below the weakened area. The positioning member maintains the position of the substrate on a moveable support. A cutting mechanism having at least one blade is provided for contacting the substrate and inducing a cleaving wave therein. The cutting mechanism is operatively associated with the positioning member so that the as at least one blade contacts the annular notch, the positioning member prevents movement of the substrate and the moveable support moves away from the substrate to allow the cleaving wave to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.

    摘要翻译： 一种用于从半导体衬底分离层的自动高精度层切割装置。 该装置包括用于接收其中具有弱化区域的半导体衬底的至少一部分和位于弱化区域下方的周边环形凹口的固定定位构件。 定位构件将基板的位置保持在可移动支撑件上。 提供具有至少一个叶片的切割机构用于接触基底并在其中引入切割波。 切割机构与定位构件可操作地相关联，使得至少一个叶片接触环形凹口，定位构件防止基底移动，并且可移动支撑件远离基底移动，以允许分裂波将基底 在切口处形成第一和第二部分，并且沿着弱化区域从基板分离层。

    Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element
    3.
    发明授权
    Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element 有权
    在支撑体上制造薄膜的方法和包括在热处理之前的附加变薄阶段的所得结构使微孔分离衬底元件

    公开(公告)号：US06335258B1

    公开(公告)日：2002-01-01

    申请号：US09284801

    申请日：1999-06-18

    申请人： Bernard Aspar ,  Michel Bruel ,  Thierry Barge

    发明人： Bernard Aspar ,  Michel Bruel ,  Thierry Barge

    IPC分类号： H01L2176

    CPC分类号： H01L21/304 ,  H01L21/76254 ,  Y10S438/977

    摘要： The present invention relates to a production method for a thin film on a support that includes an ionic implantation stage in order to demarcate the thin film in a substrate, the aim of the ionic implantation being to create a layer of micro-cavities in the substrate, a stage to bond the substrate to a support element using close contact and a heat treatment stage intended to bring the layer of micro-cavities to a temperature that is high enough to cause a split along said layer. At least one of said elements, substrate or support, is thinned before the heat treatment stage in order to maintain the close contact between the substrate and the support despite the stresses caused in the elements and resulting from the difference in their thermal dilation coefficients.

    摘要翻译： 本发明涉及一种用于支撑体上的薄膜的制造方法，该方法包括离子注入阶段以便在衬底中划定薄膜，离子注入的目的是在衬底中产生一个微腔层 使用紧密接触和热处理阶段将衬底粘合到支撑元件上的阶段，该阶段旨在使微孔层达到足以使所述层分裂的温度。 所述元件，衬底或支撑体中的至少一个在热处理阶段之前变薄，以便尽管在元件中产生的应力和由它们的热膨胀系数的差异导致的基板和支撑件之间的紧密接触。

    ANNEALING PROCESS FOR ANNEALING A STRUCTURE
    4.
    发明申请
    ANNEALING PROCESS FOR ANNEALING A STRUCTURE 有权
    退火结构退火工艺

    公开(公告)号：US20110183495A1

    公开(公告)日：2011-07-28

    申请号：US13011267

    申请日：2011-01-21

    申请人： Nicolas Sousbie ,  Bernard Aspar ,  Thierry Barge ,  Chrystelle Lagahe Blanchard

    发明人： Nicolas Sousbie ,  Bernard Aspar ,  Thierry Barge ,  Chrystelle Lagahe Blanchard

    IPC分类号： H01L21/762

    CPC分类号： H01L21/2007 ,  H01L21/187

    摘要： The invention relates to a process for annealing a structure that includes at least one wafer, with the annealing process including conducting a first annealing of the structure in an oxidizing atmosphere while holding the structure in contact with a holder in a first position in order to oxidize at least portion of the exposed surface of the structure, shifting the structure on the holder into a second position in which non-oxidized regions of the structure are exposed, and conducting a second annealing of the structure in an oxidizing atmosphere while holding the structure in the second position. The process provides an oxide layer on the structure.

    摘要翻译： 本发明涉及退火包括至少一个晶片的结构的方法，退火工艺包括在氧化气氛中进行结构的第一退火，同时保持结构与第一位置的保持器接触以氧化 所述结构的暴露表面的至少一部分将所述保持器上的结构移动到其中暴露所述结构的非氧化区域的第二位置，并且在保持所述结构的同时在所述结构的氧化气氛中进行所述结构的第二退火 第二个位置。 该过程在结构上提供氧化物层。

    Method for treating substrates for microelectronics and substrates obtained by said method
    7.
    发明授权
    Method for treating substrates for microelectronics and substrates obtained by said method 有权
    用于处理通过所述方法获得的用于微电子学和衬底的衬底的方法

    公开(公告)号：US07235427B2

    公开(公告)日：2007-06-26

    申请号：US11063867

    申请日：2005-02-24

    申请人： Thierry Barge ,  Bruno Ghyselen ,  Toshiaki Iwamatsu ,  Hideki Naruoka ,  Junichiro Furihata ,  Kiyoshi Mitani

    发明人： Thierry Barge ,  Bruno Ghyselen ,  Toshiaki Iwamatsu ,  Hideki Naruoka ,  Junichiro Furihata ,  Kiyoshi Mitani

    IPC分类号： H01L21/48

    CPC分类号： H01L21/306 ,  H01L21/30625 ,  H01L21/76254 ,  Y10T428/12528

    摘要： An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge. The first layer includes a ridge that protrudes axially and is disposed laterally adjacent the second layer measured in a direction normal to the axial direction for protecting the lateral edge. This ridge can surround portion the lateral edge in an axial cross-section for preventing edge falls. Also, the ridge can have an axial height greater than the axial thickness of the second layer. In one embodiment, the second layer includes an oxydizable semiconductor and the first layer includes an oxidized insulator.

    摘要翻译： 根据本发明的多层晶片的实施例包括基底基板，与基底基板相关联的第一层，以及在轴向方向上与基底基板相反一侧的第一层上的第二层，并且具有侧向边缘。 第一层包括沿着垂直于轴向方向测量的沿轴向突出并且横向邻近第二层布置的脊，用于保护侧边缘。 该脊可以围绕横向边缘围绕轴向横截面以防止边缘下降。 此外，脊可以具有大于第二层的轴向厚度的轴向高度。 在一个实施例中，第二层包括氧化半导体，第一层包括氧化绝缘体。

    Method for reclaiming delaminated wafer and reclaimed delaminated wafer
    9.
    发明授权
    Method for reclaiming delaminated wafer and reclaimed delaminated wafer 有权
    回收分层晶片和再生分层晶片的方法

    公开(公告)号：US06720640B2

    公开(公告)日：2004-04-13

    申请号：US10447103

    申请日：2003-05-29

    申请人： Susumu Kuwabara ,  Kiyoshi Mitani ,  Naoto Tate ,  Masatake Nakano ,  Thierry Barge ,  Christophe Maleville

    发明人： Susumu Kuwabara ,  Kiyoshi Mitani ,  Naoto Tate ,  Masatake Nakano ,  Thierry Barge ,  Christophe Maleville

    IPC分类号： H01L2906

    CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L22/34 ,  Y10S438/906 ,  Y10S438/974 ,  Y10S438/977

    摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.

    摘要翻译： 在通过离子注入和分层方法回收在接合晶片的制造中作为副产物生产的分层晶片的方法中，至少在分层晶片的倒角部分上的离子注入层被去除，然后， 晶圆被抛光。 具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。 或者，对剥离后的晶片进行热处理，然后进行抛光。 提供了一种用于回收分层晶片的方法，其提供了即使经受了良好产率的热处理也不产生颗粒的高品质再生晶片，以及这种再生晶片。