公开(公告)号：US5759263A

公开(公告)日：1998-06-02

申请号：US759417

申请日：1996-12-05

申请人： Nils Nordell ,  Adolf Schoner

发明人： Nils Nordell ,  Adolf Schoner

IPC分类号： C23C16/46 ,  C30B25/10 ,  C23C16/00

CPC分类号： C30B25/10 ,  C23C16/46

摘要： A device for epitaxially growing objects by Chemical Vapour Deposition on a substrate (1) comprises a susceptor (4) having a room (6) for receiving the substrate and means (9) for heating the susceptor and thereby the substrate and a gas mixture to be fed to the substrate for said growth. The substrate is arranged close to a first susceptor wall part (7) at least partially delimiting said room. Said heating means is arranged to heat the susceptor to a higher temperature of at least a second wall part (5) delimiting said room thereof and located substantially opposite to said first wall part than the temperature of the first wall part for obtaining a temperature gradient from said second wall part to the substrate and radiative heating thereof by said second wall part. (FIG. 1).

摘要翻译： 用于通过化学气相沉积在衬底（1）上外延生长物体的装置包括具有用于接收衬底的房间（6）的基座（4）和用于加热基座，从而将衬底和气体混合物 被供给到用于所述生长的底物。 衬底布置成靠近至少部分地限定所述房间的第一感受器壁部分（7）。 所述加热装置被布置成将基座加热到限定所述室的至少第二壁部分（5）的较高温度，并且与第一壁部分的温度基本上相对于第一壁部分位于第一壁部分的温度上，以获得温度梯度 所述第二壁部分到所述基底并且由所述第二壁部分进行辐射加热。 （图。1）。

公开(公告)号：US5705406A

公开(公告)日：1998-01-06

申请号：US636969

申请日：1996-04-24

申请人： Kurt Rottner ,  Adolf Schoner ,  Nils Nordell

发明人： Kurt Rottner ,  Adolf Schoner ,  Nils Nordell

IPC分类号： H01L21/04 ,  H01L21/74 ,  H01L29/24 ,  H01L29/808 ,  H01L21/22

CPC分类号： H01L29/1608 ,  H01L21/046 ,  H01L21/74 ,  H01L29/66068 ,  H01L29/8083 ,  Y10S438/931

摘要： A method for producing a semiconductor device having semiconductor layers of SiC with at least three doped layers on top of each other, comprises the steps of growing a first semiconductor layer of SiC; implanting an impurity dopant into the first layer to form a second doped surface layer as a sub-layer therein, the second doped surface layer being surrounded, except for the top surface thereof, by the first semiconductor layer; and epitaxially growing a third semiconductor layer of SiC on top of the second layer of SiC and regions of the first layer adjacent thereto to totally bury the second semiconductor layer. The impurity dopant implanted into the first semiconductor layer is of a first conductivity n or p type, and the first semiconductor layer being doped with a second, opposite conductivity type, so as to form a pn-junction at the interface between the first and second layers.

摘要翻译： 一种用于制造半导体器件的方法，所述半导体器件具有在其顶部具有至少三个掺杂层的具有SiC的半导体层的半导体器件，包括生长SiC的第一半导体层的步骤; 将杂质掺杂剂注入到第一层中以形成第二掺杂表面层作为其中的子层，第二掺杂表面层除了其顶表面之外被第一半导体层包围; 在SiC的第二层的顶部和与其相邻的第一层的区域外部生长SiC的第三半导体层，以完全埋入第二半导体层。 注入到第一半导体层中的杂质掺杂物具有第一导电性n或p型，并且第一半导体层掺杂有第二相反导电型，从而在第一和第二导电类型之间的界面处形成pn结 层。