公开(公告)号：US20060046442A1

公开(公告)日：2006-03-02

申请号：US10931924

申请日：2004-09-01

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

IPC分类号： H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。

公开(公告)号：US20060051941A1

公开(公告)日：2006-03-09

申请号：US11035298

申请日：2005-01-12

申请人： Eric Blomiley ,  Gurtej Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

发明人： Eric Blomiley ,  Gurtej Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

IPC分类号： H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02642

摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成包含外延硅的层的方法。 在一个实施方案中，在通过单晶材料接收的第一材料内形成开口。 开口的相对侧壁衬有第二材料，其中单晶材料暴露在第二材料衬里开口的基部处。 在第二材料衬里的开口内从暴露的单晶材料外延生长含硅层。 第二材料衬里的至少一部分被原位去除。 考虑了其他方面和实现。

公开(公告)号：US20060046395A1

公开(公告)日：2006-03-02

申请号：US11256424

申请日：2005-10-20

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。

公开(公告)号：US20050153551A1

公开(公告)日：2005-07-14

申请号：US10755000

申请日：2004-01-09

申请人： Eric Blomiley ,  Gurtej Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

发明人： Eric Blomiley ,  Gurtej Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

IPC分类号： H01L21/20 ,  H01L21/205 ,  C30B1/00 ,  H01L21/302 ,  H01L21/36 ,  H01L21/461

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

摘要： The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface. The first and second surfaces are exposed to a semiconductor material precursor under conditions in which growth of semiconductor material from the precursor comprises a lag phase prior to a growth phase, and under which it takes longer for the growth phase to initiate on the second surface than on the first surface. The exposure of the first and second surfaces is conducted for a time sufficient for the growth phase to occur on the first surface, but not long enough for the growth phase to occur on the second surface.

摘要翻译： 本发明包括半导体材料的选择性沉积方法。 将基板放置在反应室内。 基板包括第一表面和第二表面。 第一表面和第二表面在半导体材料前体暴露于其中来自前体的半导体材料的生长在生长阶段之前包含滞后期的条件下，并且在该阶段生长阶段在第二表面上开始需要更长时间比 在第一个表面。 进行第一表面和第二表面的曝光足够长的时间，以使生长阶段在第一表面上发生，但是不足以使生长相发生在第二表面上。

公开(公告)号：US20060258131A1

公开(公告)日：2006-11-16

申请号：US11418582

申请日：2006-05-04

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

IPC分类号： H01L21/44

CPC分类号： H01L29/66787 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/78642

摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.

公开(公告)号：US20070178646A1

公开(公告)日：2007-08-02

申请号：US11730039

申请日：2007-03-29

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。

公开(公告)号：US20060121699A1

公开(公告)日：2006-06-08

申请号：US11326739

申请日：2006-01-05

申请人： Eric Blomiley ,  Gurtej Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

发明人： Eric Blomiley ,  Gurtej Sandhu ,  Cem Basceri ,  Nirmal Ramaswamy

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

摘要： The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface. The first and second surfaces are exposed to a semiconductor material precursor under conditions in which growth of semiconductor material from the precursor comprises a lag phase prior to a growth phase, and under which it takes longer for the growth phase to initiate on the second surface than on the first surface. The exposure of the first and second surfaces is conducted for a time sufficient for the growth phase to occur on the first surface, but not long enough for the growth phase to occur on the second surface.

摘要翻译： 本发明包括半导体材料的选择性沉积方法。 将基板放置在反应室内。 基板包括第一表面和第二表面。 第一表面和第二表面在半导体材料前体暴露于其中来自前体的半导体材料的生长在生长阶段之前包含滞后期的条件下，并且在该阶段下生长相在第二表面上开始需要更长时间比 在第一个表面。 进行第一表面和第二表面的曝光足够长的时间，以使生长阶段在第一表面上发生，但是不足以使生长相发生在第二表面上。

公开(公告)号：US20060046459A1

公开(公告)日：2006-03-02

申请号：US10932129

申请日：2004-09-01

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

IPC分类号： H01L21/44

CPC分类号： H01L29/66787 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/78642

摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成包括外延硅和场效应晶体管的层的方法。 在一个实施方案中，形成包含外延硅的层的方法包括从暴露的单晶材料外延生长含硅层。 外延生长的硅包括以不超过1原子％的总浓度存在的碳，锗和氧中的至少一种。 在一个实施方案中，该层包括含有至少1原子％锗的硅锗合金，并且还包含总浓度不大于1原子％的碳和氧中的至少一种。 考虑了其他方面和实现。

公开(公告)号：US20060046443A1

公开(公告)日：2006-03-02

申请号：US11255652

申请日：2005-10-20

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

IPC分类号： H01L21/20 ,  H01G9/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。

公开(公告)号：US20060046394A1

公开(公告)日：2006-03-02

申请号：US11256430

申请日：2005-10-20

申请人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej Sandhu ,  Cem Basceri ,  Eric Blomiley

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.