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公开(公告)号：US20220130644A1
公开(公告)日：2022-04-28
申请号：US17438184
申请日：2020-03-13
发明人： Masahiro YOKOTA , Akihiko HAPPOYA , Ken TAKAHASHI , Shusuke MORITA , Jiro OSHIMA , Shuichi SAITO , Noriaki YAGI , Atsuya SASAKI
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes: a chamber including a first member, and a second member detachable from the first member; a conductive member disposed between the first member and the second member; and a first high frequency power supply generating plasma in the chamber. The conductive member includes a resin member made of a resin material, and a metal film covering a surface of the resin member.
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2.发明申请公开(公告)号：US20190002281A1
公开(公告)日：2019-01-03
申请号：US16125524
申请日：2018-09-07
发明人： Atsushi YUMOTO , Mari SHIMIZU , Tetsuo INOUE , Takashi HINO , Shuichi SAITO
IPC分类号： C01B21/072 , H01L21/67 , H01L23/373 , H05B3/12 , C23C14/06
摘要： An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.
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公开(公告)号：US20230120411A1
公开(公告)日：2023-04-20
申请号：US18069301
申请日：2022-12-21
发明人： Daisuke FUKUSHI , Shuichi SAITO
IPC分类号： C09K9/00 , G02F1/1524 , C01G41/00
摘要： According to one embodiment, a tungsten oxide material containing potassium is provided. The tungsten oxide material has a shape of particles including a central section and a peripheral section adjacent to the central section, and having an average particle size of 100 nm or less. A periodicity of a crystal varies between the central section and the peripheral section. In addition, a tungsten oxide powder mass for an electrochromic device including 80% by mass to 100% by mass of the tungsten oxide material is provided. Moreover, a slurry for producing an electrochromic device containing the above tungsten oxide material is provided.
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公开(公告)号：US20200208253A1
公开(公告)日：2020-07-02
申请号：US16804292
申请日：2020-02-28
发明人： Atsushi YUMOTO , Tomohiro SUGANO , Takashi HINO , Tetsuo INOUE , Shuichi SAITO
摘要： A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A≤B1≤1.2A, 0.8A≤B2≤1.2A, and 0.8A≤B3≤1.2A.
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公开(公告)号：US20210020415A1
公开(公告)日：2021-01-21
申请号：US17043908
申请日：2019-04-03
发明人： Kazuhiro ISHIKAWA , Takashi HINO , Shuichi SAITO
摘要： A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 μm or less.
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公开(公告)号：US20220100045A1
公开(公告)日：2022-03-31
申请号：US17465991
申请日：2021-09-03
发明人： Daisuke FUKUSHI , Shuichi SAITO , Michiaki FUKUI
IPC分类号： G02F1/1524 , G02F1/155 , G02F1/153
摘要： According to one embodiment, provided is an electrochromic device including an electrochromic layer, which contains a tungsten oxide material. The tungsten oxide material includes potassium-containing tungsten oxide particles having an average particle size of 100 nm or less. The potassium-containing tungsten oxide particles contain potassium within a range of 1 mol % to 50 mol %, and include a central section and a peripheral section adjacent to the central section. A periodicity of a crystal varies between the central section and the peripheral section.
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公开(公告)号：US20210284535A1
公开(公告)日：2021-09-16
申请号：US17335466
申请日：2021-06-01
发明人： Atsushi YUMOTO , Mari SHIMIZU , Tetsuo INOUE , Takashi HINO , Shuichi SAITO
IPC分类号： C01B21/072 , H01L21/67 , H01L23/373 , H05B3/12 , C23C14/06 , C23C26/00 , C23C24/04 , C23C14/28 , H05B3/06 , H05B3/84
摘要： An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.
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公开(公告)号：US20200165715A1
公开(公告)日：2020-05-28
申请号：US16777371
申请日：2020-01-30
发明人： Takashi HINO , Tetsuo INOUE , Shuichi SAITO
IPC分类号： C23C14/08 , H01L21/3065
摘要： A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.
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