公开(公告)号：US08848124B2

公开(公告)日：2014-09-30

申请号：US13431935

申请日：2012-03-27

申请人： Noriaki Ikeda ,  Chihiro Imamura ,  Manabu Ito

发明人： Noriaki Ikeda ,  Chihiro Imamura ,  Manabu Ito

IPC分类号： G02F1/136 ,  H01L29/66 ,  H01L29/417 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32

CPC分类号： H01L27/3248 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66765

摘要： According to the first aspect of the present invention, a drain electrode and a pixel electrode are electrically connected to each other on a protective film formed on a semiconductor active layer, and thereby it is possible to easily connect the drain electrode and the pixel electrode to each other and to improve a yield.

摘要翻译： 根据本发明的第一方面，漏极电极和像素电极在形成于半导体有源层上的保护膜上彼此电连接，从而可以容易地将漏电极和像素电极连接到 并提高产量。

公开(公告)号：US20120262642A1

公开(公告)日：2012-10-18

申请号：US13431935

申请日：2012-03-27

申请人： Noriaki IKEDA ,  Chihiro Imamura ,  Manabu Ito

发明人： Noriaki IKEDA ,  Chihiro Imamura ,  Manabu Ito

IPC分类号： G02F1/1368 ,  H01L27/32 ,  H01L33/08 ,  G02F1/167 ,  H01L27/15

CPC分类号： H01L27/3248 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66765

摘要： According to the first aspect of the present invention, a drain electrode and a pixel electrode are electrically connected to each other on a protective film formed on a semiconductor active layer, and thereby it is possible to easily connect the drain electrode and the pixel electrode to each other and to improve a yield.

摘要翻译： 根据本发明的第一方面，漏极电极和像素电极在形成于半导体有源层上的保护膜上彼此电连接，从而可以容易地将漏电极和像素电极连接到 并提高产量。

公开(公告)号：US08963147B2

公开(公告)日：2015-02-24

申请号：US13876419

申请日：2011-09-21

申请人： Chihiro Imamura ,  Yukari Miyairi ,  Hiroaki Koyama

发明人： Chihiro Imamura ,  Yukari Miyairi ,  Hiroaki Koyama

IPC分类号： H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/00 ,  G02F1/167

CPC分类号： H01L29/7869 ,  G02F1/167 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

摘要： A thin film transistor includes, on an insulating substrate, at least: a gate electrode; a gate insulating layer; a source electrode; a drain electrode; a metal oxide layer including a semiconductor region and an insulating region, each of the semiconductor region and the insulating region being composed of a same metal oxide material; and an insulating protective layer. The semiconductor region includes a region between the source electrode and the drain electrode, and is overlaid on a part of each of them. The semiconductor region is formed between the gate insulating layer and the insulating protective layer to abut on at least one of them. The electric conductivity of the semiconductor region is higher than that of the insulating region.

摘要翻译： 薄膜晶体管在绝缘基板上至少包括：栅电极; 栅极绝缘层; 源电极; 漏电极; 包括半导体区域和绝缘区域的金属氧化物层，所述半导体区域和所述绝缘区域由相同的金属氧化物材料构成; 和绝缘保护层。 半导体区域包括源电极和漏电极之间的区域，并且覆盖在它们的每一个的一部分上。 半导体区域形成在栅极绝缘层和绝缘保护层之间以抵靠它们中的至少一个。 半导体区域的导电率高于绝缘区域的导电率。

公开(公告)号：US20140217396A1

公开(公告)日：2014-08-07

申请号：US13876419

申请日：2011-09-21

申请人： Chihiro Imamura ,  Yukari Miyairi ,  Hiroaki Koyama

发明人： Chihiro Imamura ,  Yukari Miyairi ,  Hiroaki Koyama

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  G02F1/167 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

摘要： A thin film transistor includes, on an insulating substrate, at least: a gate electrode; a gate insulating layer; a source electrode; a drain electrode; a metal oxide layer including a semiconductor region and an insulating region, each of the semiconductor region and the insulating region being composed of a same metal oxide material; and an insulating protective layer. The semiconductor region includes a region between the source electrode and the drain electrode, and is overlaid on a part of each of them. The semiconductor region is formed between the gate insulating layer and the insulating protective layer to abut on at least one of them. The electric conductivity of the semiconductor region is higher than that of the insulating region.

摘要翻译： 薄膜晶体管在绝缘基板上至少包括：栅电极; 栅极绝缘层; 源电极; 漏电极; 包括半导体区域和绝缘区域的金属氧化物层，所述半导体区域和所述绝缘区域由相同的金属氧化物材料构成; 和绝缘保护层。 半导体区域包括源电极和漏电极之间的区域，并且覆盖在它们的每一个的一部分上。 半导体区域形成在栅极绝缘层和绝缘保护层之间以抵靠它们中的至少一个。 半导体区域的导电率高于绝缘区域的导电率。