公开(公告)号：US07872261B2

公开(公告)日：2011-01-18

申请号：US12390224

申请日：2009-02-20

申请人： Noriaki Ikeda

发明人： Noriaki Ikeda

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124

摘要： An embodiment of the present invention is an transparent thin film transistor which has an substantially transparent substrate, a gate line made of a thin film of a substantially transparent conductive material, a substantially transparent gate insulating film, a substantially transparent semiconductor active layer, a source line made of a thin film of a metal material and a drain electrode made of a thin film of a substantially transparent conductive material. In addition, the source line and the drain electrode are formed apart from each other and sandwich the substantially transparent semiconductor active layer. Moreover, at least any one of the thin film of the gate line and the thin film of the source line is stacked with a thin film of a metal material.

摘要翻译： 本发明的实施例是一种透明薄膜晶体管，其具有基本透明的基板，由基本上透明的导电材料的薄膜制成的栅极线，基本透明的栅极绝缘膜，基本上透明的半导体有源层，源极 由金属材料的薄膜制成的线和由基本上透明的导电材料的薄膜制成的漏电极。 此外，源极线和漏极彼此分开形成并夹着基本上透明的半导体活性层。 此外，栅极线的薄膜和源极线的薄膜中的至少任一个用金属材料的薄膜堆叠。

公开(公告)号：US20100258805A1

公开(公告)日：2010-10-14

申请号：US12753781

申请日：2010-04-02

申请人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

发明人： Noriaki Ikeda ,  Kodai Murata ,  Manabu Ito ,  Chihiro Miyazaki

IPC分类号： H01L33/16 ,  H01L29/786 ,  H01L21/44

CPC分类号： H01L27/1248 ,  H01L27/1255

摘要： One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.

摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有基板，形成在基板上的栅极电极，栅极绝缘膜，形成在栅极绝缘膜上的半导体层，形成在半导体层上的保护膜和栅极绝缘 膜，并且具有分开且直接形成在半导体层上的第一和第二开口部分，形成在保护膜上并与保护膜的第一开口部分处的半导体层电连接的源电极和形成在保护膜上的漏电极 保护膜，并与保护膜的第二开口部电连接到半导体层。

公开(公告)号：US20090212291A1

公开(公告)日：2009-08-27

申请号：US12390224

申请日：2009-02-20

申请人： Noriaki IKEDA

发明人： Noriaki IKEDA

IPC分类号： H01L27/088 ,  H01L29/739

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124

摘要： An embodiment of the present invention is an transparent thin film transistor which has an substantially transparent substrate, a gate line made of a thin film of a substantially transparent conductive material, a substantially transparent gate insulating film, a substantially transparent semiconductor active layer, a source line made of a thin film of a metal material and a drain electrode made of a thin film of a substantially transparent conductive material. In addition, the source line and the drain electrode are formed apart from each other and sandwich the substantially transparent semiconductor active layer. Moreover, at least any one of the thin film of the gate line and the thin film of the source line is stacked with a thin film of a metal material.

摘要翻译： 本发明的实施例是一种透明薄膜晶体管，其具有基本透明的基板，由基本上透明的导电材料的薄膜制成的栅极线，基本透明的栅极绝缘膜，基本上透明的半导体有源层，源极 由金属材料的薄膜制成的线和由基本上透明的导电材料的薄膜制成的漏电极。 此外，源极线和漏极彼此分开形成并夹着基本上透明的半导体活性层。 此外，栅极线的薄膜和源极线的薄膜中的至少任一个用金属材料的薄膜堆叠。

公开(公告)号：US07399701B2

公开(公告)日：2008-07-15

申请号：US11417044

申请日：2006-05-04

申请人： Noriaki Ikeda

发明人： Noriaki Ikeda

IPC分类号： H01L21/4763

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/823475 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device manufacturing method of a semiconductor device having a contact plug, in which a contact hole formed by a surface portion of a high-concentration N-type diffusion layer formed on a semiconductor silicon substrate surface and an interlayer insulating film is implanted with indium ions at an energy ranging from 30 to 120 keV and an implantation amount ranging from 1.0×1013/cm2 to 5.0×1014/cm2 to grow an indium-containing layer on the surface portion of the high-concentration N-type diffusion layer at the bottom of the contact hole.

摘要翻译： 本发明提供一种具有接触插塞的半导体器件的半导体器件制造方法，其中，由半导体硅衬底表面上形成的高浓度N型扩散层的表面部分形成的接触孔和层间绝缘膜 以30至120keV的能量注入铟离子，并且注入量范围为1.0×10 13 / cm 2至5.0×10 14 / > / cm 2以在接触孔的底部的高浓度N型扩散层的表面部分上生长含铟层。

公开(公告)号：US07298002B2

公开(公告)日：2007-11-20

申请号：US11165034

申请日：2005-06-24

申请人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

发明人： Hiroyuki Kitamura ,  Yuki Togashi ,  Hiroyasu Kitajima ,  Noriaki Ikeda ,  Yoshitaka Nakamura ,  Eiichiro Kakehashi

IPC分类号： H01L27/108

CPC分类号： H01L28/84 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/90 ,  Y10S257/905

摘要： A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

摘要翻译： 半导体器件包括各自包括相应的圆柱形电极的圆柱形电容器。 每个圆柱形电极包括半球形硅晶粒。 从圆柱形电极的上部区域突出的半球形硅晶粒尺寸较大，从圆柱形电极的下部区域突出的半球形硅晶粒尺寸较小，或者圆柱形电极的下部区域没有半球形硅晶粒。

公开(公告)号：US20060275997A1

公开(公告)日：2006-12-07

申请号：US11447147

申请日：2006-06-06

申请人： Noriaki Ikeda

发明人： Noriaki Ikeda

IPC分类号： H01L21/20

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： Upon a deep-hole capacitor fabrication, a hole is formed in an insulator layer, and then a film of a conductive material is formed on the insulator layer and on the whole inner surface of the hole. The film and the insulator layer are exposed to a chemical-mechanical polishing process to form a lower electrodes of the conductive material. A capacitor dielectric on the lower electrode is formed, and then an upper electrode is formed on the capacitor dielectric.

摘要翻译： 在深孔电容器制造中，在绝缘体层中形成孔，然后在绝缘体层和孔的整个内表面上形成导电材料的膜。 将薄膜和绝缘体层暴露于化学机械抛光工艺以形成导电材料的下电极。 形成下电极上的电容器电介质，然后在电容器电介质上形成上电极。

公开(公告)号：US20060267199A1

公开(公告)日：2006-11-30

申请号：US11417044

申请日：2006-05-04

申请人： Noriaki Ikeda

发明人： Noriaki Ikeda

IPC分类号： H01L23/52

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/823475 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device manufacturing method of a semiconductor device having a contact plug, in which a contact hole formed by a surface portion of a high-concentration N-type diffusion layer formed on a semiconductor silicon substrate surface and an interlayer insulating film is implanted with indium ions at an energy ranging from 30 to 120 keV and an implantation amount ranging from 1.0×1013/cm2 to 5.0×1014/cm2 to grow an indium-containing layer on the surface portion of the high-concentration N-type diffusion layer at the bottom of the contact hole.

摘要翻译： 本发明提供一种具有接触插塞的半导体器件的半导体器件制造方法，其中，由半导体硅衬底表面上形成的高浓度N型扩散层的表面部分形成的接触孔和层间绝缘膜 以30至120keV的能量注入铟离子，并且注入量范围为1.0×10 13 / cm 2至5.0×10 14 / > / cm 2以在接触孔的底部的高浓度N型扩散层的表面部分上生长含铟层。

公开(公告)号：US5329026A

公开(公告)日：1994-07-12

申请号：US618941

申请日：1990-11-28

申请人： Noboru Sugishima ,  Noriaki Ikeda ,  Yasushi Fujii ,  Ryuji Aoki ,  Yumi Hatta

发明人： Noboru Sugishima ,  Noriaki Ikeda ,  Yasushi Fujii ,  Ryuji Aoki ,  Yumi Hatta

IPC分类号： C07C46/02 ,  C07C46/04 ,  C07C46/10 ,  C07C49/675 ,  C07C49/697 ,  C07C50/10 ,  C07C50/24 ,  C07C66/02 ,  C07C205/46 ,  C07C205/47 ,  C07C323/22 ,  C07C50/18

CPC分类号： C07C323/22 ,  C07C201/12 ,  C07C303/32 ,  C07C46/02 ,  C07C46/04 ,  C07C46/10 ,  C07C49/675 ,  C07C49/697 ,  C07C50/10 ,  C07C50/24 ,  C07C51/353 ,  C07C66/02 ,  C07C2102/10 ,  C07C2103/22 ,  C07C2103/24

摘要： A process for preparation of a 2-substituted-1,4-naphthoquinone which comprises oxidizing a 2-substituted naphthalene to obtain reaction products comprising a 2-substituted-1,4-naphthoquinone and a 6-substituted-1,4-naphthoquinone; adding a diene compound to the reaction products and heating the mixture to form a Diels-Alder reaction adduct between the diene compound and the 6-substituted-1,4-naphthoquinone in the reaction products; and separating the 2-substituted-1,4-naphthoquinone from the adduct.

摘要翻译： 一种2-取代-1,4-萘醌的制备方法，其包括将2-取代萘氧化得到包含2-取代-1,4-萘醌和6-取代-1,4-萘醌的反应产物; 向反应产物中加入二烯化合物并加热混合物以在反应产物中的二烯化合物和6-取代的-1,4-萘醌之间形成Diels-Alder反应加合物; 并从加合物中分离2-取代的-1,4-萘醌。

公开(公告)号：US4572451A

公开(公告)日：1986-02-25

申请号：US664013

申请日：1984-10-23

申请人： Noriaki Ikeda ,  Mutsunori Kai ,  Hiraki Asai

发明人： Noriaki Ikeda ,  Mutsunori Kai ,  Hiraki Asai

IPC分类号： B65H19/22 ,  B65H19/28 ,  B65H19/29 ,  B65H19/20

CPC分类号： B65H19/29 ,  B65H19/28 ,  B65H2301/41426

摘要： When the winding operation is started, the leading edge portion of the sheet is sucked and held by one of a pair of horizontally disposed rollers and the extension of the leading edge portion of the sheet beyond the one roller is controlled by rotation of said one roller. An adhesive with a suitable viscosity is sprayed against a core from the position below the core. The core and said one roller are rotated so that the sheet is clamped between the one roller and the portion of the core which is applied with the adhesive and consequently is bonded to the core. Thereafter the pair of rollers are rotated at a low speed so that the slack of the sheet is eliminated. Next the sheet is wound around the core at a high speed. After the winding operation, an adhesive with a suitable viscosity is sprayed against a roll of paper from below so that the sheet is bonded by the weight of the roll of paper itself. Thereafter the sheet is cut off and the roll of paper is pushed out.

摘要翻译： 当卷绕操作开始时，片材的前缘部分被一对水平布置的辊中的一个吸引并保持，并且片材的前缘部分的延伸超出一个辊子，由所述一个辊子的旋转来控制 。 将具有合适粘度的粘合剂从核心下方的位置喷射到芯上。 芯和所述一个辊被旋转，使得片材被夹在一个辊子和被施加有粘合剂的芯部的部分之间，并且因此被结合到芯部。 此后，一对辊以低速旋转，从而消除了片的松弛。 接下来，片材以高速卷绕在芯上。 在卷绕操作之后，将具有适当粘度的粘合剂从下方喷射到一卷纸上，使得纸张被纸本身的重量粘合。 此后，将纸张切断并将纸卷推出。

公开(公告)号：US20120327227A1

公开(公告)日：2012-12-27

申请号：US13397869

申请日：2012-02-16

申请人： Noriaki IKEDA ,  Isamu Hiroi

发明人： Noriaki IKEDA ,  Isamu Hiroi

IPC分类号： H04N7/18

CPC分类号： G01N21/958 ,  G01M3/38 ,  G01N21/8851 ,  G01N21/95 ,  G06T7/0004 ,  G06T2207/30128 ,  G06T2207/30164

摘要： An inspection apparatus is provided for inspecting a package having a content wrapped with a translucent packaging sheet, the package having an outline including front and rear edges and two side edges and having a seal where the packaging sheet is sealed formed inside at least one of the front and rear edges. The inspection apparatus includes a lighting disposed on one side of a gap across which the package is to be conveyed from an upstream conveyor mechanism to a downstream conveyor mechanism, a camera disposed on the other side of the gap, and an image processor for processing an image captured by the camera. The image processor is capable of obtaining a strip-shaped partial image including the seal from an entire image of the package, thereby enabling determination of whether a foreign substance is present in the partial image.

摘要翻译： 提供一种检查装置，用于检查具有被半透明包装片包裹的内容物的包装，该包装具有包括前后边缘和两个侧边缘的轮廓，并且具有密封件，其中包装片被密封形成在至少一个 前后边缘。 该检查装置包括：设置在从上游输送机构向下游输送机构输送包装的间隙的一侧的照明装置，位于间隙的另一侧的照相机，以及用于处理 相机拍摄的图像。 图像处理器能够从包装的整个图像获得包括密封的条状部分图像，从而能够确定部分图像中是否存在异物。