Plasma display apparatus
    1.
    发明授权
    Plasma display apparatus 失效
    等离子显示装置

    公开(公告)号:US07227516B2

    公开(公告)日:2007-06-05

    申请号:US10844516

    申请日:2004-05-13

    IPC分类号: G09G3/28 H01J17/49

    摘要: The plasma display apparatus, in which the light emission efficiency is improved, has been disclosed. The fourth electrodes, which extend in the same direction of the first electrodes (X electrode) and the second electrodes (Y electrodes) and are exposed into the discharge space, are provided between the first and the second electrodes where the sustaining discharge is carried out, and when the sustain action is carried out, the fixed voltage between the voltage applied to the first electrode and that applied to the second electrode is applied to the fourth electrode provided between the first and the second electrodes where the sustain action is carried out in order to make the electric field between the first and the second electrodes uniform.

    摘要翻译: 已经公开了提高发光效率的等离子体显示装置。 在第一电极和第二电极之间沿第一电极(X电极)和第二电极(Y电极)的相同方向延伸并暴露于放电空间的第四电极设置在执行维持放电的第一和第二电极之间 并且当执行维持动作时,施加到第一电极的电压与施加到第二电极的电压之间的固定电压施加到设置在第一和第二电极之间的第四电极,其中进行维持动作 以使第一和第二电极之间的电场均匀。

    Method of driving plasma display device and plasma display device
    5.
    发明授权
    Method of driving plasma display device and plasma display device 失效
    驱动等离子体显示装置和等离子体显示装置的方法

    公开(公告)号:US06867552B2

    公开(公告)日:2005-03-15

    申请号:US09986949

    申请日:2001-11-13

    摘要: After a sustain discharge period, a voltage twice a sustain pulse is applied to one of sustain discharge electrodes to form, on an address electrode, wall charges capable of self-erase discharge between an address electrode and the sustain discharge electrode by an address pulse, and the address pulse is applied to the address electrode to perform self-erase discharge between the address electrode and the sustain discharge electrode, thereby removing the wall charges formed on the address electrode. With this arrangement, a cell to be turned on in accordance with display data can be accurately selected in an address period without forming any wall charges on the address electrode, and any degradation in drive margin or display quality of a plasma display device can be suppressed.

    摘要翻译: 在维持放电期间之后,将一维维持脉冲的两倍的电压施加到一个维持放电电极,以在寻址电极上形成能够通过寻址脉冲在寻址电极和维持放电电极之间进行自擦除放电的壁电荷, 并且将地址脉冲施加到寻址电极,以在寻址电极和维持放电电极之间执行自擦除放电,从而去除在寻址电极上形成的壁电荷。 利用这种布置,可以在地址周期中精确地选择要根据显示数据导通的单元,而不在地址电极上形成任何壁电荷,并且可以抑制等离子体显示装置的驱动余量或显示质量的任何劣化 。

    Controller and control method for a controller
    6.
    发明授权
    Controller and control method for a controller 有权
    控制器的控制器和控制方法

    公开(公告)号:US08468392B2

    公开(公告)日:2013-06-18

    申请号:US12789392

    申请日:2010-05-27

    IPC分类号: G06F11/00

    摘要: A controller and a control method for a controller can simplify application development and can improve the performance of device control processes. When a request is received from an application 1 and the received process request is an initialization request, whether or not the received request is the first initialization request received after the application 1 started running is determined. If the received initialization request is the first initialization request, the request is passed to the device driver 3 and initialization settings information describing the configuration of the device driver 3 after the initialization process ends is stored. If an error has occurred in the device driver 3 when the device driver 3 status is detected, an error handling process is executed according to the device driver 3 state. When the device driver 3 has recovered, a request for setting the device driver 3 state to the state based on the initialization settings information is asserted.

    摘要翻译: 用于控制器的控制器和控制方法可以简化应用开发,并可以提高设备控制过程的性能。 当从应用程序1接收到请求并且接收到的处理请求是初始化请求时,确定接收到的请求是否是在应用程序1开始运行之后接收的第一初始化请求。 如果接收的初始化请求是第一初始化请求,则将该请求传递给设备驱动器3,并且存储描述初始化处理结束之后的设备驱动器3的配置的初始化设置信息。 如果在检测到设备驱动器3状态时在设备驱动器3中发生错误,则根据设备驱动器3的状态执行错误处理处理。 当设备驱动器3恢复时,基于初始化设置信息将设备驱动器3的状态设置为状态的请求被断言。

    CONTROLLER AND CONTROL METHOD FOR A CONTROLLER
    7.
    发明申请
    CONTROLLER AND CONTROL METHOD FOR A CONTROLLER 有权
    控制器的控制器和控制方法

    公开(公告)号:US20100306584A1

    公开(公告)日:2010-12-02

    申请号:US12789392

    申请日:2010-05-27

    IPC分类号: G06F11/00 G06F9/44

    摘要: A controller and a control method for a controller can simplify application development and can improve the performance of device control processes. When a request is received from an application 1 and the received process request is an initialization request, whether or not the received request is the first initialization request received after the application 1 started running is determined. If the received initialization request is the first initialization request, the request is passed to the device driver 3 and initialization settings information describing the configuration of the device driver 3 after the initialization process ends is stored. If an error has occurred in the device driver 3 when the device driver 3 status is detected, an error handling process is executed according to the device driver 3 state. When the device driver 3 has recovered, a request for setting the device driver 3 state to the state based on the initialization settings information is asserted.

    摘要翻译: 用于控制器的控制器和控制方法可以简化应用开发,并可以提高设备控制过程的性能。 当从应用程序1接收到请求并且接收到的处理请求是初始化请求时,确定接收到的请求是否是在应用程序1开始运行之后接收的第一初始化请求。 如果接收的初始化请求是第一初始化请求,则将该请求传递给设备驱动器3,并且存储描述初始化处理结束之后的设备驱动器3的配置的初始化设置信息。 如果在检测到设备驱动器3状态时在设备驱动器3中发生错误,则根据设备驱动器3的状态执行错误处理处理。 当设备驱动器3恢复时,基于初始化设置信息将设备驱动器3的状态设置为状态的请求被断言。

    Method of manufacturing semiconductor device
    8.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07811745B2

    公开(公告)日:2010-10-12

    申请号:US11453087

    申请日:2006-06-15

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material.

    摘要翻译: 一种制造半导体器件的方法包括在下面的区域上形成以第一间距布置的多个虚拟线图案,形成具有形成在虚拟线图案的长边上的预定掩模部分的第一掩模图案,每个第一掩模图案具有 闭环形状并且围绕每个虚拟线图案,去除虚拟线图案,形成具有第一图案部分的第二掩模图案,该第一图案部分覆盖第一掩模图案的端部和位于相邻的第一掩模图案的端部之间的端部部分 端部,使用第一掩模图案和第二掩模图案作为掩模蚀刻下面的区域,以形成各自位于相邻的预定掩模部分之间的沟槽,并且用预定的材料填充沟槽。

    Method of manufacturing a lens
    9.
    发明授权
    Method of manufacturing a lens 有权
    制造镜片的方法

    公开(公告)号:US07780880B2

    公开(公告)日:2010-08-24

    申请号:US11376137

    申请日:2006-03-16

    申请人: Eiji Ito

    发明人: Eiji Ito

    IPC分类号: B29D11/00

    摘要: A plastic lens, which does not require a modification to an inner diameter of a mirror frame but is uniform in outer diameter, is provided and include: protrusions on the circumference in at least three points divided thereof into three equal parts except for an injection gate point, in positions equally distant to a center O of the plastic lens. The protrusions have respective outer surfaces provided as fit portions to a mirror frame. The plastic lens preferably has a diameter of 50 mm or more and a thickness smallest at the center thereof.

    摘要翻译: 提供了一种塑料透镜,其不需要对镜框的内径进行改变,但是外径均匀,并且包括:至少三个点的圆周上的突起,被分成除了注入门之外的三个相等的部分 点,在与塑料透镜的中心O相等的位置上。 突起部具有设置成与镜框架相配合的部分的相应的外表面。 塑料透镜的直径优选为50mm以上,其中心部的厚度最小。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
    半导体存储器件及其制造方法

    公开(公告)号:US20090212352A1

    公开(公告)日:2009-08-27

    申请号:US12391953

    申请日:2009-02-24

    摘要: A semiconductor memory device has a semiconductor substrate, a plurality of word lines formed at predetermined intervals on the semiconductor substrate, each word line having a gate insulating film, a charge storage layer, a first insulating film, and a controlling gate electrode which are stacked in order, and including a metal oxide layer above the level of the gate insulating film, a second insulating film covering a side of the word line and a surface of the semiconductor substrate between the word lines, and having a film thickness of 15 nm or less, and a third insulating film formed between the word lines adjacent to each other such that a region below the level of the metal oxide layer has a cavity.

    摘要翻译: 半导体存储器件具有半导体衬底,在半导体衬底上以预定间隔形成的多个字线,每个字线具有栅极绝缘膜,电荷存储层,第一绝缘膜和控制栅电极,它们被堆叠 并且包括位于栅极绝缘膜的高度之上的金属氧化物层,覆盖字线的一侧的第二绝缘膜和字线之间的半导体衬底的表面,并且具有15nm的膜厚度或 并且形成在彼此相邻的字线之间的第三绝缘膜,使得低于金属氧化物层的电平的区域具有空腔。