公开(公告)号：US20100239981A1

公开(公告)日：2010-09-23

申请号：US12729244

申请日：2010-03-23

申请人： Norihiko IKEDA ,  Hiromitsu Nakashima ,  Saki Harada

发明人： Norihiko IKEDA ,  Hiromitsu Nakashima ,  Saki Harada

IPC分类号： G03F7/004 ,  C08F220/26 ,  C08F224/00

CPC分类号： C08F224/00 ,  C08F220/26 ,  C08F220/28 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A polymer includes a repeating unit (a-1) shown by a following formula (a-1), a repeating unit (a-2) shown by a following formula (a-2), and a GPC weight average molecular weight of about 1000 to about 100,000, wherein R0 represents an alkyl group having 1 to 5 carbon atoms in which at least one hydrogen atom is substituted by a hydroxyl group, and R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, wherein R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, R2 represents an alkyl group having 1 to 4 carbon atoms, and R3 represents an alkyl group having 1 to 4 carbon atoms, a substituted or unsubstituted monovalent cyclic hydrocarbon group having 4 to 20 carbon atoms, or a divalent cyclic hydrocarbon group having 4 to 20 carbon atoms formed by R3 and R3 bonding to each other together with a carbon atom.

摘要翻译： 聚合物包括由下式（a-1）表示的重复单元（a-1），由下式（a-2）表示的重复单元（a-2）和约 1000至约100,000，其中R0表示具有1至5个碳原子的烷基，其中至少一个氢原子被羟基取代，R1表示氢原子，甲基或三氟甲基，其中R1表示 氢原子，甲基或三氟甲基，R 2表示碳原子数1〜4的烷基，R 3表示碳原子数1〜4的烷基，取代或未取代的1〜4价的环状烃基， 碳原子或碳原子数为4〜20的二价环状烃基与碳原子一起形成。

公开(公告)号：US20140011365A1

公开(公告)日：2014-01-09

申请号：US13590242

申请日：2012-08-21

申请人： Naoki YASUI ,  Norihiko IKEDA ,  Tooru ARAMAKI ,  Yasuhiro NISHIMORI

发明人： Naoki YASUI ,  Norihiko IKEDA ,  Tooru ARAMAKI ,  Yasuhiro NISHIMORI

IPC分类号： H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/3065

摘要： To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

摘要翻译： 通过改善边缘排除区域的工作特性来提高加工均匀性。 提供了一种等离子体处理装置，用于通过在供给处理气体的真空容器中产生等离子体并将其排出到预定压力并通过对放置在真空容器中的样品施加射频偏置来处理样品，其中a 在安装有晶片的样品台的凸部的外侧形成的台阶部布置有施加有射频偏置功率的导电射频环，并且在台阶部设置介电盖环，覆盖无线电 所述盖环基本上阻挡从所述射频环对所述等离子体的射频功率的穿透，并且所述射频环顶面被设定为高于晶片顶面。