公开(公告)号：US20140011365A1

公开(公告)日：2014-01-09

申请号：US13590242

申请日：2012-08-21

申请人： Naoki YASUI ,  Norihiko IKEDA ,  Tooru ARAMAKI ,  Yasuhiro NISHIMORI

发明人： Naoki YASUI ,  Norihiko IKEDA ,  Tooru ARAMAKI ,  Yasuhiro NISHIMORI

IPC分类号： H01L21/3065

CPC分类号： H01J37/32192 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/3065

摘要： To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.

摘要翻译： 通过改善边缘排除区域的工作特性来提高加工均匀性。 提供了一种等离子体处理装置，用于通过在供给处理气体的真空容器中产生等离子体并将其排出到预定压力并通过对放置在真空容器中的样品施加射频偏置来处理样品，其中a 在安装有晶片的样品台的凸部的外侧形成的台阶部布置有施加有射频偏置功率的导电射频环，并且在台阶部设置介电盖环，覆盖无线电 所述盖环基本上阻挡从所述射频环对所述等离子体的射频功率的穿透，并且所述射频环顶面被设定为高于晶片顶面。

公开(公告)号：US20100043976A1

公开(公告)日：2010-02-25

申请号：US12240293

申请日：2008-09-29

申请人： Seiichi WATANABE ,  Naoki YASUI ,  Susumu TAUCHI ,  Yasuhiro NISHIMORI

发明人： Seiichi WATANABE ,  Naoki YASUI ,  Susumu TAUCHI ,  Yasuhiro NISHIMORI

IPC分类号： H01L21/3065

CPC分类号： H01J37/32293 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32449 ,  H01J2237/2001

摘要： A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.

摘要翻译： 等离子体处理装置包括：内部被压下的减压室; 气体供给单元，其将处理气体供给到所述室中; 微波供应单元，其将微波供应到所述室中以产生等离子体; 物体放置电极，其中处理材料被放置并将处理材料保持在所述室中; 以及抽吸单元，其连接到所述室以排出所述室中的气体，其中所述室，用于将气体提供到所述气体供应单元的室中的部分，用于将微波引入所述微波供应室 单元，物体放置电极和抽真空单元与腔室的中心轴同轴设置，用于引入微波的部件包括微波旋转发生器，其旋转输入微波的偏振面并将微波提供给 房间。

公开(公告)号：US20090165955A1

公开(公告)日：2009-07-02

申请号：US12400095

申请日：2009-03-09

申请人： Masahiro SUMIYA ,  Naoki YASUI ,  Seiichi WATANABE

发明人： Masahiro SUMIYA ,  Naoki YASUI ,  Seiichi WATANABE

IPC分类号： C23F1/00

CPC分类号： C23C16/5096 ,  C23C16/4401 ,  H01J37/32165

摘要： A plasma processing apparatus including: a phase controller for controlling a phase difference between biasing power supplied to the antenna biasing electrode and biasing power supplied to the substrate electrode to have a difference of 180°±45°; wherein the biasing power supplied to the antenna biasing electrode and the biasing power supplied to the substrate electrode have a same frequency, which same frequency is lower than a frequency of the RF power for plasma generation. A plurality of filters is included, to perform a variety of filtering.

摘要翻译： 一种等离子体处理装置，包括：相位控制器，用于控制提供给天线偏置电极的偏置功率与提供给基板电极的偏置功率之间的相位差具有180°±45°的差; 其中提供给天线偏置电极的偏置功率和提供给基板电极的偏置功率具有相同的频率，其频率低于用于等离子体产生的RF功率的频率。 包括多个滤波器，以执行各种滤波。