Cold Cathode Electron Emission Source and Method for Manufacture of the Same
    2.
    发明申请
    Cold Cathode Electron Emission Source and Method for Manufacture of the Same 审中-公开
    冷阴极电子发射源及其制造方法

    公开(公告)号:US20100237763A1

    公开(公告)日:2010-09-23

    申请号:US12726115

    申请日:2010-03-17

    IPC分类号: H01J1/30 H01B13/00

    摘要: The present invention provides a novel method for the manufacture of an enhanced cold cathode electron emission source allowing a measure of area to be processed at one time. The method includes the steps of: dissolving first and second polymers in solvent to obtain a polymer solution, and applying the polymer solution onto a second conductive layer before forming a hole; precipitating and immobilizing the first polymer in a particulate in the second polymer by evaporating the solvent; removing the first polymer particulate with a developer to form an etching hole in the second polymer; and performing etching process via the etching hole so as to form the hole in the second conductive layer. In one embodiment, the second polymer has greater solubility than the first polymer in the solvent, and the first polymer has greater solubility than the second polymer in the developer.

    摘要翻译: 本发明提供了一种用于制造增强型冷阴极电子发射源的新方法,其允许一次处理面积的测量。 该方法包括以下步骤:将第一和第二聚合物溶解在溶剂中以获得聚合物溶液,并在形成孔之前将聚合物溶液施加到第二导电层上; 通过蒸发溶剂将第一聚合物沉淀并固定在第二聚合物中的颗粒中; 用显影剂除去第一聚合物颗粒以在第二聚合物中形成蚀刻孔; 并通过蚀刻孔进行蚀刻处理,以便在第二导电层中形成孔。 在一个实施方案中,第二聚合物在溶剂中具有比第一聚合物更大的溶解度,并且第一聚合物在显影剂中的溶解度高于第二聚合物。