公开(公告)号：US10741649B2

公开(公告)日：2020-08-11

申请号：US15988883

申请日：2018-05-24

申请人： North Carolina State University

发明人： Edward Sachet ,  Christopher Shelton ,  Jon-Paul Maria ,  Kyle Patrick Kelley ,  Evan Lars Runnerstrom

IPC分类号： H01L29/267 ,  C23C14/08 ,  H01L21/02 ,  H01L21/477 ,  C23C14/35 ,  C23C14/54 ,  C23C14/34 ,  C23C14/00 ,  H01L31/0224 ,  H01L29/45 ,  H01L29/786

摘要： A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.

公开(公告)号：US20180350922A1

公开(公告)日：2018-12-06

申请号：US15988883

申请日：2018-05-24

申请人： North Carolina State University

发明人： Edward Sachet ,  Christopher Shelton ,  Jon-Paul Maria ,  Kyle Patrick Kelley ,  Evan Lars Runnerstrom

IPC分类号： H01L29/267 ,  C23C14/08 ,  C23C14/35 ,  H01L21/02 ,  H01L21/477

CPC分类号： H01L29/267 ,  C23C14/0042 ,  C23C14/0057 ,  C23C14/086 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/352 ,  C23C14/548 ,  H01L21/02266 ,  H01L21/477 ,  H01L29/45 ,  H01L29/458 ,  H01L29/7869 ,  H01L31/022466

摘要： A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.