公开(公告)号：US20150044882A1

公开(公告)日：2015-02-12

申请号：US14466222

申请日：2014-08-22

Applicant: Novellus Systems, Inc.

Inventor： Nerissa Draeger ,  Karena Shannon ,  Bart van Schravendijk ,  Kaihan Ashtiani

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02299 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/31111

Abstract: Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.

Abstract translation: 本文提供了集成兼容的介电膜以及它们的沉积和修饰方法。 根据各种实施方案，该方法可以包括以集成兼容的处理方法沉积靶向特定膜特性的可流动电介质膜和/或对这些性质的修饰。 在某些实施方案中，提供了沉积和修饰具有可调湿蚀刻速率和其它性质的可流动介电膜的方法。 湿法蚀刻速率可以通过整合兼容的处理过程进行整合。 处理过程的实例包括等离子体暴露和紫外线照射。

公开(公告)号：US09299559B2

公开(公告)日：2016-03-29

申请号：US14466222

申请日：2014-08-22

Applicant: Novellus Systems, Inc.

Inventor： Nerissa Draeger ,  Karena Shannon ,  Bart van Schravendijk ,  Kaihan Ashtiani

IPC: H01L21/302 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0234 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02299 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/31111

Abstract: Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.

Abstract translation: 本文提供了集成兼容的介电膜以及它们的沉积和修饰方法。 根据各种实施方案，该方法可以包括以集成兼容的处理方法沉积靶向特定膜特性的可流动电介质膜和/或对这些性质的修饰。 在某些实施方案中，提供了沉积和修饰具有可调湿蚀刻速率和其它性质的可流动介电膜的方法。 湿法蚀刻速率可以通过整合兼容的处理过程进行整合。 处理过程的实例包括等离子体暴露和紫外线照射。