公开(公告)号：US20020061715A1

公开(公告)日：2002-05-23

申请号：US10042244

申请日：2002-01-11

Applicant: Nu Tool Inc.

Inventor： Cyprian Uzoh ,  Bulent Basol ,  Homayoun Talieh

IPC: B24B001/00

CPC classification number: B24B37/042 ,  C25D3/38 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A modified plating solution that can be used to electroplate a high quality conductive material that can be effectively polished and planarized includes (1) a solvent, (2) an ionic species of the conductive material to be deposited, (3) at least one additive to improve electrical and structural properties, and (4) a modifying agent.

Abstract translation: 可用于电镀可以有效抛光和平坦化的高质量导电材料的改性电镀溶液包括（1）溶剂，（2）待沉积的导电材料的离子种类，（3）至少一种添加剂 改善电气和结构性能，和（4）改性剂。

公开(公告)号：US20010035354A1

公开(公告)日：2001-11-01

申请号：US09735546

申请日：2000-12-14

Applicant: Nu Tool Inc.

Inventor： Jalal Ashjaee ,  Boguslaw A. Nagorski ,  Bulent M. Basol ,  Homayoun Talieh ,  Cyprian Uzoh

IPC: C25D005/18 ,  B23H003/00 ,  C25D017/00 ,  C25F007/00 ,  C25F003/16 ,  C25D017/06 ,  C25D005/04

CPC classification number: C25D17/001 ,  C25D7/123 ,  C25D17/005 ,  C25F7/00 ,  H01L21/2885

Abstract: Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.

Abstract translation: 通过提供具有面向晶片正面的阳极区域的阳极和将晶片正面与至少一个电气电连接来进行导电材料沉积在半导体晶片的晶片正面上或从晶片正面去除导电材料 通过将电接触和晶片正面推动到彼此靠近来接触阳极区域外部。 在阳极和电接触之间施加电势，并且晶片相对于阳极和电触点移动。 因此允许在整个晶片正面侧面上进行全面电镀或电解抛光。