Method and apparatus for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing
    1.
    发明申请
    Method and apparatus for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing 有权
    用于在电化学处理期间向旋转的微电子工件提供电和流体连通的方法和装置

    公开(公告)号:US20010040099A1

    公开(公告)日:2001-11-15

    申请号:US09797504

    申请日:2001-03-01

    CPC classification number: C25D7/123 C25D17/001 H01L21/2885

    Abstract: A method and apparatus for transmitting electrical signals and fluids to and/or from a microelectronic workpiece. An apparatus in accordance with one embodiment of the invention includes a shaft rotatable about a shaft axis and having a first end with a first electrical contact portion toward the first end, a second end opposite the first end, and an internal channel along the shaft axis between the first and second ends. The shaft can further have at least one first hole toward the first end with the first hole extending radially from the channel to an external surface of the shaft. The shaft can still further have at least one second hole toward the second end with the second hole extending from the channel to the external surface. A housing rotatably receives the shaft and has an aperture coupleable to a fluid source and/or fluid sink. The housing further has a fluid passage positioned adjacent to at least one of the first holes of the shaft and in fluid communication with the aperture when the shaft rotates relative to the housing. The housing also has a second electrical contact portion engaged with the first electrical contact portion to transmit electrical signals between the first and second electrical contact portions while the shaft rotates relative to the housing.

    Abstract translation: 一种用于将电信号和流体传送到微电子工件和/或从微电子工件传输的方法和装置。 根据本发明的一个实施例的装置包括可绕轴线旋转的轴,具有朝向第一端的第一电接触部分的第一端,与第一端相对的第二端,以及沿轴线的内部通道 在第一和第二端之间。 轴可以进一步具有朝向第一端的至少一个第一孔,第一孔从通道径向延伸到轴的外表面。 轴可以还具有朝向第二端的至少一个第二孔,第二孔从通道延伸到外表面。 壳体可旋转地接收轴并且具有可耦合到流体源和/或流体槽的孔。 壳体还具有一个流体通道,该流体通道邻近轴的第一孔中的至少一个定位,并且当轴相对于壳体旋转时与该孔流体连通。 壳体还具有与第一电接触部分接合的第二电接触部分,以在轴相对于壳体旋转时在第一和第二电接触部分之间传输电信号。

    Method and apparatus for continuous processing of semiconductor wafers
    2.
    发明申请
    Method and apparatus for continuous processing of semiconductor wafers 失效
    用于连续处理半导体晶片的方法和装置

    公开(公告)号:US20010052464A1

    公开(公告)日:2001-12-20

    申请号:US09901793

    申请日:2001-07-09

    CPC classification number: C25F7/00 C25D17/001

    Abstract: An electrochemical reaction assembly and methods of inducing electrochemical reactions, such as for deposition of materials on semiconductor substrates. The assembly and method achieve a highly uniform thickness and composition of deposition material or uniform etching or polishing on the semiconductor substrates by retaining the semiconductor substrates on a moving cathode immersed in an appropriate reaction solution wherein a wire mesh anode rotates about the moving cathode during electrochemical reaction.

    Abstract translation: 电化学反应组件和诱导电化学反应的方法,例如用于在半导体衬底上沉积材料。 该组件和方法通过将半导体衬底保持在浸入合适的反应溶液中的移动阴极上来实现沉积材料的高度均匀的厚度和组成或在半导体衬底上的均匀蚀刻或抛光,其中,丝网阳极在电化学 反应。

    Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
    3.
    发明申请
    Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing 有权
    用于全面电镀或电解抛光的与晶片表面电接触的方法和装置

    公开(公告)号:US20010035354A1

    公开(公告)日:2001-11-01

    申请号:US09735546

    申请日:2000-12-14

    Applicant: Nu Tool Inc.

    CPC classification number: C25D17/001 C25D7/123 C25D17/005 C25F7/00 H01L21/2885

    Abstract: Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.

    Abstract translation: 通过提供具有面向晶片正面的阳极区域的阳极和将晶片正面与至少一个电气电连接来进行导电材料沉积在半导体晶片的晶片正面上或从晶片正面去除导电材料 通过将电接触和晶片正面推动到彼此靠近来接触阳极区域外部。 在阳极和电接触之间施加电势,并且晶片相对于阳极和电触点移动。 因此允许在整个晶片正面侧面上进行全面电镀或电解抛光。

    Method and apparatus for plating substrate
    4.
    发明申请
    Method and apparatus for plating substrate 有权
    电镀基板的方法和装置

    公开(公告)号:US20040079646A1

    公开(公告)日:2004-04-29

    申请号:US10624564

    申请日:2003-07-23

    Inventor: Shuji Hirao

    CPC classification number: H01L21/2885 C25D7/123 C25D21/00 C25D21/04

    Abstract: After bubbles adsorbed to a substrate are removed by rotating the substrate in a plating solution at a higher speed or after the wettability of the surface of the substrate to be plated is improved before the substrate is immersed in the plating solution, the substrate is rotated in the plating solution at a lower speed so that a plating process is performed with respect to the substrate.

    Abstract translation: 吸附到基板上的气泡通过以较高的速度旋转镀液中的基板或者在将基板浸渍在电镀液中之前改善被镀基板的表面的润湿性而被去除之后,将基板旋转 电镀液以较低的速度进行,从而对基板进行电镀处理。

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