公开(公告)号：US20240429016A1

公开(公告)日：2024-12-26

申请号：US18697006

申请日：2022-09-27

Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

Inventor： Makoto Tokoro SCHREIBER ,  Matthias WOLF ,  Cathal CASSIDY

IPC: H01J37/141 ,  H01J37/26

Abstract: Techniques are described for a charged particle optical apparatus that includes a loop of solid material that encloses a bore and a wire winding poloidally wrapped around the loop surrounding the bore. A current is applied to the toroidal winding generating a magnetic field inside the loop along a toroidal direction of the loop and generating magnetic vector potential within the bore. When charged particle(s) pass through the bore of the loop, the magnetic vector potential focuses the charged particles based on the focal point of the charged particle optical apparatus.

公开(公告)号：US20180193820A1

公开(公告)日：2018-07-12

申请号：US15736721

申请日：2016-06-28

Applicant: Okinawa Institute of Science and Technology School Corporation

Inventor： Mukhles Ibrahim SOWWAN ,  Cathal CASSIDY ,  Vidya Dhar SINGH

IPC: B01J23/44 ,  B01J23/02 ,  B01J35/00 ,  B01J33/00 ,  B01J37/34 ,  B01J37/00 ,  B01J37/02 ,  B01J37/14

Abstract: A novel catalyst includes a plurality of nanoparticles, each nanoparticle including a core made of a catalytic metal and a porous shell surrounding the core, made of metal oxide, the porous shell preserving a catalytic function of the core and reducing reduction of the core and coalescence of the nanoparticles.

公开(公告)号：US20160042948A1

公开(公告)日：2016-02-11

申请号：US14774226

申请日：2014-03-07

Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

Inventor： Singh VIDYA DHAR ,  Cathal CASSIDY ,  Mukhles Ibrahim SOWWAN

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/16

CPC classification number: H01L21/02658 ,  C01B33/021 ,  C30B1/023 ,  C30B28/02 ,  C30B29/06 ,  C30B29/60 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/16

Abstract: A method of forming crystallized semiconductor particles includes: forming amorphous semiconductor particles in a vacuumed aggregation chamber; transporting the amorphous semiconductor particles formed in the vacuumed aggregation chamber to a vacuumed deposition chamber within which a substrate is held; and applying a vapor of a metal catalyst to the amorphous semi-conductor particles while still in transit to the substrate in the vacuumed deposition chamber to induce crystallization of at least portion of the amorphous semiconductor particles via the metal catalyst in the transit, thereby depositing the crystallized semiconductor particles with the metal catalyst attached thereto onto the substrate.

Abstract translation: 形成结晶化半导体颗粒的方法包括：在真空聚集室中形成非晶半导体颗粒; 将形成在真空聚集室中的非晶半导体颗粒输送到其中保持基板的真空沉积室; 以及将金属催化剂的蒸气施加到所述非晶半导体颗粒上，同时仍然在所述真空沉积室中转移到所述基板上，以在所述运输过程中经由所述金属催化剂引起至少部分所述非晶半导体颗粒的结晶，由此沉积 将结合了金属催化剂的半导体颗粒结合到基板上。