公开(公告)号：US20160362791A1

公开(公告)日：2016-12-15

申请号：US15121524

申请日：2015-02-24

Applicant: OSAKA UNIVERSITY ,  NOF CORPORATION

Inventor： Kazuya Yamamura ,  Yuji Ohkubo ,  Haruka Sato ,  Masaya Hikita

IPC: C23C18/04 ,  H01J37/32 ,  C09D11/52 ,  C09D7/12 ,  C09D151/00 ,  C09J11/06 ,  C09J5/00 ,  C09J151/08 ,  C09J151/00 ,  C09D151/08 ,  C23C18/08 ,  C09J9/02

CPC classification number: C23C18/04 ,  C08J7/045 ,  C08J7/123 ,  C08J2327/18 ,  C08J2345/00 ,  C08J2379/08 ,  C08J2433/14 ,  C09D7/63 ,  C09D11/52 ,  C09D151/003 ,  C09D151/08 ,  C09J5/00 ,  C09J9/02 ,  C09J11/06 ,  C09J151/003 ,  C09J151/08 ,  C09J2427/006 ,  C09J2479/086 ,  C23C18/08 ,  H01J37/32055 ,  H01J2237/3328

Abstract: A method includes:generating a peroxide radical on a dielectric substrate surface by treating the dielectric substrate surface with atmospheric pressure plasma using a rare gas; fixing a functional group forming a coordinate bond with a silver ion, by reacting a grafting agent; and applying a silver-containing composition to the substrate surface, followed by heating and curing the silver-containing composition, to thereby form a silver thin film layer, the silver-containing composition containing a silver compound (A) represented by Formula (1) and an amine compound (B) represented by Formula (2), the silver compound (A) being contained in an amount of 10 to 50% by mass, the amine compound (B) being contained in an amount of 50 to 90% by mass, relative to a total amount of 100% by mass of the silver compound (A) and the amine compound (B).The method enables to form a metal film having high adhesiveness even on the surface of a fluorine resin, which is suitable as a dielectric substrate due to its property of avoidance of delay in signal transmission speed or increase in power consumption, but has extremely low adhesiveness. (R1; a hydrogen atom, —(CY2)a-CH3, or —((CH2)b-O—CHZ)c-CH3; R2: —(CY2)d-CH3 or —((CH2)e-O—CHZ)f-CH3; Y: a hydrogen atom or —(CH2)g-CH3; Z: a hydrogen atom or —(CH2)h-CH3; a: an integer of 0 to 8; b: an integer of 1 to 4; c: an integer of 1 to 3; d: an integer of 1 to 8; e: an integer of 1 to 4; f: an integer of 1 to 3; g: an integer of 1 to 3; h: an integer of 1 or 2)

Abstract translation: （R1;氢原子， - （CY2）a-CH3或 - （（CH2）bO-CHZ）c-CH3; R2： - （CY2）d-CH3或 - （（CH2）eO-CHZ） CH 3; Y：氢原子或 - （CH 2）g -CH 3; Z：氢原子或 - （CH 2）h -CH 3; a：0〜8的整数; b：1〜4的整数; c： 1〜3的整数; d表示1〜8的整数，e表示1〜4的整数，f表示1〜3的整数，g表示1〜3的整数，h表示1以上的整数， 2）