METHOD FOR METALLIZING DIELECTRIC SUBSTRATE SURFACE, AND DIELECTRIC SUBSTRATE PROVIDED WITH METAL FILM
    1.
    发明申请
    METHOD FOR METALLIZING DIELECTRIC SUBSTRATE SURFACE, AND DIELECTRIC SUBSTRATE PROVIDED WITH METAL FILM 审中-公开
    用于金属化电介质基材表面的方法和用金属膜提供的介电基材

    公开(公告)号:US20160362791A1

    公开(公告)日:2016-12-15

    申请号:US15121524

    申请日:2015-02-24

    Abstract: A method includes:generating a peroxide radical on a dielectric substrate surface by treating the dielectric substrate surface with atmospheric pressure plasma using a rare gas; fixing a functional group forming a coordinate bond with a silver ion, by reacting a grafting agent; and applying a silver-containing composition to the substrate surface, followed by heating and curing the silver-containing composition, to thereby form a silver thin film layer, the silver-containing composition containing a silver compound (A) represented by Formula (1) and an amine compound (B) represented by Formula (2), the silver compound (A) being contained in an amount of 10 to 50% by mass, the amine compound (B) being contained in an amount of 50 to 90% by mass, relative to a total amount of 100% by mass of the silver compound (A) and the amine compound (B).The method enables to form a metal film having high adhesiveness even on the surface of a fluorine resin, which is suitable as a dielectric substrate due to its property of avoidance of delay in signal transmission speed or increase in power consumption, but has extremely low adhesiveness. (R1; a hydrogen atom, —(CY2)a-CH3, or —((CH2)b-O—CHZ)c-CH3; R2: —(CY2)d-CH3 or —((CH2)e-O—CHZ)f-CH3; Y: a hydrogen atom or —(CH2)g-CH3; Z: a hydrogen atom or —(CH2)h-CH3; a: an integer of 0 to 8; b: an integer of 1 to 4; c: an integer of 1 to 3; d: an integer of 1 to 8; e: an integer of 1 to 4; f: an integer of 1 to 3; g: an integer of 1 to 3; h: an integer of 1 or 2)

    Abstract translation: (R1;氢原子, - (CY2)a-CH3或 - ((CH2)bO-CHZ)c-CH3; R2: - (CY2)d-CH3或 - ((CH2)eO-CHZ) CH 3; Y:氢原子或 - (CH 2)g -CH 3; Z:氢原子或 - (CH 2)h -CH 3; a:0〜8的整数; b:1〜4的整数; c: 1〜3的整数; d表示1〜8的整数,e表示1〜4的整数,f表示1〜3的整数,g表示1〜3的整数,h表示1以上的整数, 2)

    Joined body and method for manufacturing same

    公开(公告)号:US11383488B2

    公开(公告)日:2022-07-12

    申请号:US17059721

    申请日:2019-05-30

    Abstract: A joined body of a resin body containing a fluorine-based resin and a rubber body containing a vulcanized silicone rubber. It is preferable that the vulcanized silicone rubber contains a dimethylsiloxane unit. It is found that, by performing predetermined plasma treatment on the surface of a rubber body containing a vulcanized silicone rubber, the rubber body adheres to a resin body containing a fluorine-based resin.

    CHUCK APPARATUS
    6.
    发明申请

    公开(公告)号:US20240371677A1

    公开(公告)日:2024-11-07

    申请号:US18775291

    申请日:2024-07-17

    Abstract: A chuck apparatus is configured to hold a wafer during planarization of the wafer with the aid of anodizing. The chuck apparatus includes a chuck cover, a suction portion, and an energizing portion. The suction portion includes a suction surface that suctions the wafer. The energizing portion is provided in the suction portion so as to come into contact and energize the wafer suctioned by the suction portion. The chuck cover covers the suction portion and the energizing portion in an insulating manner while exposing the suction surface.

    SURFACE PROCESSING METHOD FOR SiC SUBSTRATE

    公开(公告)号:US20220380927A1

    公开(公告)日:2022-12-01

    申请号:US17750465

    申请日:2022-05-23

    Abstract: A surface processing method for a SiC substrate includes the following processes or steps: anodizing a workpiece surface of the SiC substrate by passing a current having a current density of 15 mA/cm2 or more through the SiC substrate as an anode in the presence of an electrolyte; disposing a grinding wheel layer of a surface processing pad to the workpiece surface and selectively removing, with the grinding wheel layer, an oxide formed on the workpiece surface through anodization; and performing, simultaneously or sequentially, the anodization of the workpiece surface and the selective removal of the oxide formed on the workpiece surface with the grinding wheel layer.

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