公开(公告)号：US20160104842A1

公开(公告)日：2016-04-14

申请号：US14786835

申请日：2014-04-23

Applicant: OSAKA UNIVERSITY ,  PI-CRYSTAL INC.

Inventor： Junichi TAKEYA ,  Junshi SOEDA

IPC: H01L51/00 ,  C30B19/06 ,  C30B29/58 ,  H01L51/05

CPC classification number: H01L51/0003 ,  B05C5/02 ,  B05C5/0254 ,  B05C11/028 ,  B05C11/04 ,  C30B19/063 ,  C30B29/58 ,  H01L51/0068 ,  H01L51/0508 ,  H01L51/0558

Abstract: A raw material solution (6), in which an organic semiconductor material is dissolved in a solvent, is supplied to a substrate (1). The solvent is evaporated so that crystals of the organic semiconductor material are precipitated. Thus, an organic semiconductor thin film (7) is formed on the substrate (1). An edge forming member (2) having a contact face (2a) on one side is used and located opposite the substrate (1) so that the plane of the contact face (2a) intersects the surface of the substrate (1) at a predetermined angle. The raw material solution (6) is supplied to the substrate (1) and formed into a droplet (6a) that comes into contact with the contact face (2a). The substrate (1) and the edge forming member (2) are moved relative to each other in a direction parallel to the surface of the substrate (1) so as to separate the edge forming member (2) from the droplet (6a), and while the raw material solution (6) is supplied so that a change in size of the droplet (6a) with the relative movement is maintained within a predetermined range, the solvent contained in the droplet (6a) is evaporated to form the organic semiconductor thin film (7) on the substrate (1) after the contact face (2a) has been moved. In this manner, a large-area organic semiconductor single crystal thin film having high charge mobility can be manufactured by a simple process using a solvent evaporation method based on droplet formation.

Abstract translation: 将有机半导体材料溶解在溶剂中的原料溶液（6）供给到基板（1）。 蒸发溶剂使得有机半导体材料的晶体沉淀。 因此，在基板（1）上形成有机半导体薄膜（7）。 使用在一侧具有接触面（2a）的边缘形成部件（2），并且与基板（1）相对设置，使得接触面（2a）的平面以预定的方式与基板（1）的表面相交 角度。 将原料溶液（6）供给到基板（1），并形成与接触面（2a）接触的液滴（6a）。 基板（1）和边缘形成部件（2）在与基板（1）的表面平行的方向上相对移动，从而将边缘形成部件（2）与液滴（6a）分离， 并且当提供原料溶液（6）使得相对运动的液滴（6a）的尺寸变化保持在预定范围内时，包含在液滴（6a）中的溶剂被蒸发以形成有机半导体 接触面（2a）移动后的基板（1）上的薄膜（7）。 以这种方式，可以通过使用基于液滴形成的溶剂蒸发方法的简单方法来制造具有高电荷迁移率的大面积有机半导体单晶薄膜。

公开(公告)号：US20210202865A1

公开(公告)日：2021-07-01

申请号：US17270657

申请日：2019-08-29

Applicant: THE UNIVERSITY OF TOKYO ,  PI-CRYSTAL INC.

Inventor： Toshihiro OKAMOTO ,  Junichi TAKEYA ,  Masato MITANI ,  Yosuke ITO ,  Tomonori MATSUMURO

IPC: H01L51/00 ,  C07D333/50

Abstract: Provided is a novel chalcogen-containing organic semiconductor compound having excellent carrier mobility. The compound is represented by Formula (1a) or (1b): [Chem. 1] where in Formulas (1a) and (1b), X represents S, O, or Se, and R1 each independently represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an aralkyl group, a pyridyl group, a furyl group, a thienyl group, or a thiazolyl group.

公开(公告)号：US20160035903A1

公开(公告)日：2016-02-04

申请号：US14772572

申请日：2014-02-26

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED ,  OSAKA UNIVERSITY

Inventor： Takayuki OKACHI ,  Junichi TAKEYA

IPC: H01L29/786 ,  H01L29/06

CPC classification number: H01L29/78696 ,  H01L27/1292 ,  H01L29/0692 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78609 ,  H01L29/78642

Abstract: Thin-film transistor includes column-shaped protrusion portion having a side surface and protruding from a main surface of the substrate, a gate insulating layer including a first layer and a second layer, at least part of the gate insulating layer being in a channel region extending along the side surface, a gate electrode in contact with the gate insulating layer, a source electrode and a drain electrode isolated from one another, at least part of one of the source electrode and the drain electrode overlap the protrusion portion and the other being in a region that does not overlap the protrusion portion or the one electrode, and a semiconductor layer in contact with at least part of the source electrode, at least part of the drain electrode, and at least part of the gate insulating layer in the channel region directly or with a functional layer interposed.

Abstract translation: 薄膜晶体管包括具有侧表面并从基板的主表面突出的柱状突出部分，包括第一层和第二层的栅极绝缘层，栅极绝缘层的至少一部分在沟道区域中 沿着所述侧面延伸，与所述栅极绝缘层接触的栅电极，彼此隔离的源电极和漏电极，所述源电极和所述漏电极中的至少一部分与所述突出部重叠， 在与所述突起部或所述一个电极不重叠的区域中，以及与所述源电极的至少一部分，所述漏电极的至少一部分以及所述沟道中的所述栅极绝缘层的至少一部分接触的半导体层 直接或具有插入功能层的区域。