公开(公告)号：US12206044B2

公开(公告)日：2025-01-21

申请号：US17264320

申请日：2019-07-31

Applicant: OSRAM OLED GMBH

Inventor： André Steiner ,  Christine Rafael ,  Paola Altieri-Weimar

IPC: H01L33/12 ,  H01L33/62 ,  H01S5/22 ,  H01S5/32

Abstract: A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.

公开(公告)号：US20210313500A1

公开(公告)日：2021-10-07

申请号：US17266631

申请日：2019-07-23

Applicant: Osram OLED GmbH

Inventor： Andreas Leber ,  Siegfried Herrmann ,  Christine Rafael

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/50 ,  H01L33/00 ,  H01L33/60 ,  H01L33/10

Abstract: An optoelectronic semiconductor chip may include a substrate and a semiconductor layer sequence having a first region, a second region, and an active layer between the first and second region. The chip may further include a first contact ridge configured to energize a first region, a second contact ridge configured to energize the second region, a first connection point to contact the first contact ridge, and a second connection point to contact the second contact ridge. The first and second contact ridge may each extend over at least 50% of the length of the semiconductor chip. The first and second contact ridge may vertically overlap where at least one through-connection extends from the first contact ridge through the second contact ridge into the first region.