公开(公告)号：US11183612B2

公开(公告)日：2021-11-23

申请号：US16758172

申请日：2018-10-23

Applicant: OSRAM OLED GmbH

Inventor： Petrus Sundgren ,  Christoph Klemp

IPC: H01L33/00 ,  H01L21/78

Abstract: The invention relates to a method for producing at least one optoelectronic component (100) comprising the steps
A) providing an auxiliary carrier (1),
B) epitaxially applying a sacrificial layer (2) on the auxiliary carrier (1), wherein the sacrificial layer (2) comprises germanium,
C) epitaxially applying a semiconductor layer sequence (3) on the sacrificial layer (2),
D) removing the sacrificial layer (2) by means of dry etching (9), such that the auxiliary carrier (1) is removed from the semiconductor layer sequence (3).

公开(公告)号：US11145783B2

公开(公告)日：2021-10-12

申请号：US16762272

申请日：2018-11-05

Applicant: OSRAM OLED GmbH

Inventor： Petrus Sundgren

IPC: H01L33/14 ,  H01L33/44 ,  H01L33/00

Abstract: An optoelectronic semiconductor component is specified which comprises a semiconductor layer sequence having a first and a second semiconductor layer of a first conductivity type, an active layer designed for generating electromagnetic radiation, a first electrical terminal layer and a second electrical terminal layer laterally spaced therefrom which electrically contacts the second semiconductor layer, and a first contact zone of a second conductivity type which adjoins the first electrical terminal layer and is electrically conductively connected to the first electrical terminal layer. And at least one functional region formed between the first and second terminal layers, in which a second contact zone of a second conductivity type and at least one shielding zone of a second conductivity type is formed.
Furthermore, a method for producing the optoelectronic semiconductor component is specified.

公开(公告)号：US11569635B2

公开(公告)日：2023-01-31

申请号：US16767067

申请日：2018-11-12

Applicant: OSRAM OLED GmbH

Inventor： Petrus Sundgren

IPC: H01S5/30 ,  H01S5/042 ,  H01L27/15 ,  H01L33/06 ,  H01L33/46 ,  H01S5/02 ,  H01S5/183 ,  H01S5/343 ,  H01S5/42

Abstract: A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.

公开(公告)号：US10580938B2

公开(公告)日：2020-03-03

申请号：US15777633

申请日：2016-11-17

Applicant: OSRAM OLED GmbH

Inventor： Jens Ebbecke ,  Petrus Sundgren ,  Roland Zeisel

IPC: H01L33/44 ,  H01L33/30 ,  H01L33/00

Abstract: A light-emitting diode chip and a method for manufacturing a light-emitting diode chip are disclosed. In an embodiment a light-emitting diode chip includes an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation and a passivation layer comprising statically fixed electrical charge carriers, wherein the passivation layer is located on a side surface of the semiconductor layer sequence covering at least the active zone.

公开(公告)号：US20200295539A1

公开(公告)日：2020-09-17

申请号：US16767067

申请日：2018-11-12

Applicant: OSRAM OLED GmbH

Inventor： Petrus Sundgren

IPC: H01S5/30 ,  H01S5/183 ,  H01S5/02 ,  H01S5/343 ,  H01S5/042 ,  H01S5/42 ,  H01L33/06 ,  H01L33/46 ,  H01L27/15

Abstract: A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.