公开(公告)号：US20220228909A1

公开(公告)日：2022-07-21

申请号：US17612916

申请日：2020-05-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Dietze ,  Wolfgang Zinkl

IPC: G01J1/42 ,  G01J1/04

Abstract: In an embodiment, an optoelectronic measuring device 1ncludes a first detector configured to provide a first detector signal, a second detector configured to provide a second detector signal, wherein each of the first detector and the second detector is configured to detect electromagnetic radiation, a signal difference determiner configured to generate a difference signal by subtracting the second detector signal from the first detector signal and a spectral filter arranged in a beam path upstream of the second detector, wherein the spectral filter is configured to filter the electromagnetic radiation before detection by the second detector, wherein the optoelectronic measuring device is configured to measure an intensity of the electromagnetic radiation impinging on the optoelectronic measuring device.

公开(公告)号：US11114574B2

公开(公告)日：2021-09-07

申请号：US16624969

申请日：2018-06-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Dietze ,  Tim Boescke ,  Wolfgang Zinkl

IPC: H01L31/0216 ,  A61B5/024 ,  H01L27/146 ,  H01L27/144 ,  G02B5/22 ,  G02B5/28

Abstract: A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.

公开(公告)号：US11835384B2

公开(公告)日：2023-12-05

申请号：US17612916

申请日：2020-05-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Dietze ,  Wolfgang Zinkl

IPC: G01J1/42 ,  G01J1/04 ,  G01J3/46 ,  G01J3/12

CPC classification number: G01J1/4228 ,  G01J1/0474 ,  G01J1/0488 ,  G01J1/4204 ,  G01J3/465 ,  G01J2003/1226

Abstract: In an embodiment, an optoelectronic measuring device includes a first detector configured to provide a first detector signal, a second detector configured to provide a second detector signal, wherein each of the first detector and the second detector is configured to detect electromagnetic radiation, a signal difference determiner configured to generate a difference signal by subtracting the second detector signal from the first detector signal and a spectral filter arranged in a beam path upstream of the second detector, wherein the spectral filter is configured to filter the electromagnetic radiation before detection by the second detector, wherein the optoelectronic measuring device is configured to measure an intensity of the electromagnetic radiation impinging on the optoelectronic measuring device.

公开(公告)号：US20200176616A1

公开(公告)日：2020-06-04

申请号：US16624969

申请日：2018-06-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Daniel Dietze ,  Tim Boescke ,  Wolfgang Zinkl

IPC: H01L31/0216 ,  A61B5/024

Abstract: A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.

公开(公告)号：US20200225740A1

公开(公告)日：2020-07-16

申请号：US16647193

申请日：2018-09-21

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Daniel Dietze ,  Maximilian Assig ,  Claus Jaeger

IPC: G06F3/01 ,  G01S1/70 ,  G01S3/789 ,  G06T19/00

Abstract: A sensor and a 3-D position detection system are disclosed. In an embodiment a sensor includes at least one sensor chip configured to detect radiation, at least one carrier on which the sensor chip is mounted and a cast body that is transmissive for the radiation and that completely covers the sensor chip, wherein a centroid shift of the sensor chip amounts to at most 0.04 mrad at an angle of incidence of up to at least 60°, wherein the cast body comprises a light inlet side that faces away from the sensor chip, and the light inlet side comprises side walls bounding it on all sides, wherein the side walls are smooth, planar and transmissive for the radiation, wherein a free field-of-view on the light inlet side has an aperture angle of at least 140°, and wherein the cast body protrudes in a direction away from the sensor chip beyond a bond wire.