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公开(公告)号：US11114574B2
公开(公告)日：2021-09-07
申请号：US16624969
申请日：2018-06-13
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Daniel Dietze , Tim Boescke , Wolfgang Zinkl
IPC: H01L31/0216 , A61B5/024 , H01L27/146 , H01L27/144 , G02B5/22 , G02B5/28
Abstract: A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.
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公开(公告)号：US20210349016A1
公开(公告)日：2021-11-11
申请号：US17279514
申请日：2019-09-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Gerd Plechinger , Tim Boescke , Wolfgang Zinkl
IPC: G01N21/3554
Abstract: In an embodiment a sensor device includes a first optoelectronic emitter configured to irradiate a spot with electromagnetic rays, a second optoelectronic emitter configured to irradiate the spot with electromagnetic rays, a detector configured to detect electromagnetic rays from the first and second emitters reflected at or transmitted through the spot, wherein the electromagnetic rays of the first emitter have a wavelength in a range of 1400-1500 nm, wherein the electromagnetic rays of the second emitter have a wavelength in a range of 900-1100 nm, and wherein the second emitter is configured to emit at least one further electromagnetic signal, the one further electromagnetic signal not being used for measuring a humidity.
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公开(公告)号：US20180113022A1
公开(公告)日：2018-04-26
申请号：US15298370
申请日：2016-10-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Tim Boescke , Christoph Goeltner
CPC classification number: G01J1/44 , G01J1/0204 , G01J1/0271 , G01J1/08 , H01L27/14618 , H01L27/14623 , H01L27/14629 , H01L27/14678
Abstract: An integrated circuit for sensor applications includes a plurality of photosensitive areas on a top side, capable of measuring incident light, thereby creating a signal, and a processing unit adapted to evaluate the signal measured by the photosensitive areas; and a sensor including 1) the integrated circuit, 2) a housing with a first cavity and a second cavity, and 3) a barrier located between the first cavity and the second cavity, wherein the integrated circuit is located within the first cavity, the top side of the integrated circuit faced upwardly, and a light source is located within the second cavity.
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公开(公告)号：US11888078B2
公开(公告)日：2024-01-30
申请号：US17790523
申请日：2021-01-08
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Massimo Cataldo Mazzillo , Tim Boescke , Wolfgang Zinkl
IPC: H01L31/107 , H01L31/109 , H01L31/118
CPC classification number: H01L31/1075 , H01L31/109 , H01L31/1185
Abstract: A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (612a), (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612a) thus forming a heterojunction, and the photodiode (600) further comprises a precursor layer (620) arranged between the bulk structure (610) and the light absorption layer (614), the light absorption layer (614) being grown on the precursor layer.
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公开(公告)号：US11881824B2
公开(公告)日：2024-01-23
申请号：US17293936
申请日：2019-11-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Tim Boescke
CPC classification number: H03F3/45076 , H03K3/033
Abstract: A transimpedance amplifier may include a voltage-controlled operational amplifier having a non-inverting input connected to ground, an inverting input receiving a current signal to be amplified, an output coupled to the inverting input via a coupling resistor, and a power-down input (PWDN input) activated upon receipt of at least one power-down signal (PWDN) such that at least one internal current source is thereupon deactivated.
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Patent Agency Ranking
公开(公告)号：US12276545B2
公开(公告)日：2025-04-15
申请号：US17614391
申请日：2020-05-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Andrey Lysov , Tim Boescke
Abstract: An optoelectronic sensor component for measuring light may include a first signal channel, a second signal channel, a first light-sensitive detection assembly, a second light-sensitive detection assembly, a further light-sensitive detection assembly, and an assigned further signal channel. The first signal channel may provide a first electrical signal, which represents the intensity of light incident on the sensor component. The second signal channel may provide a second electrical signal representing the intensity of the light incident on the sensor component. The first and second light-sensitive detection assemblies may generate the first and second electrical signals, respectively, and be assigned to the first and second signal channels, respectively. Both detection assemblies may have an identical spectral sensitivity and are thus redundant with respect to one another. The spectral sensitivity of both detection assemblies may have a photopic profile. The further light-sensitive detection assembly may be configured for detecting only infrared light.
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公开(公告)号：US11428627B2
公开(公告)日：2022-08-30
申请号：US17279514
申请日：2019-09-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Gerd Plechinger , Tim Boescke , Wolfgang Zinkl
IPC: G01N21/3554
Abstract: In an embodiment a sensor device includes a first optoelectronic emitter configured to irradiate a spot with electromagnetic rays, a second optoelectronic emitter configured to irradiate the spot with electromagnetic rays, a detector configured to detect electromagnetic rays from the first and second emitters reflected at or transmitted through the spot, wherein the electromagnetic rays of the first emitter have a wavelength in a range of 1400-1500 nm, wherein the electromagnetic rays of the second emitter have a wavelength in a range of 900-1100 nm, and wherein the second emitter is configured to emit at least one further electromagnetic signal, the one further electromagnetic signal not being used for measuring a humidity.
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公开(公告)号：US20200176616A1
公开(公告)日：2020-06-04
申请号：US16624969
申请日：2018-06-13
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Daniel Dietze , Tim Boescke , Wolfgang Zinkl
IPC: H01L31/0216 , A61B5/024
Abstract: A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.
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公开(公告)号：US12176453B2
公开(公告)日：2024-12-24
申请号：US18528920
申请日：2023-12-05
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Massimo Cataldo Mazzillo , Tim Boescke , Wolfgang Zinkl
IPC: H01L31/107 , H01L31/109 , H01L31/118
Abstract: An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.
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公开(公告)号：US11646820B2
公开(公告)日：2023-05-09
申请号：US17622244
申请日：2020-05-19
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Andrey Lysov , Tim Boescke
CPC classification number: H04L1/0061 , H03M13/09 , H04L1/0041 , H04L1/0045
Abstract: A method and an optical sensor are described herein. The optical sensor may include a communication interface for receiving data from a control unit and for transmitting data to the control unit, a storage unit with at least one register for storing data, and a CRC generator for generating a CRC checksum. The optical sensor may be configured in such a way that when data stored in the storage unit is to be transmitted to the control unit, the communication interface receives from the control unit a device address specific to the optical sensor and an address of a register in which the data to be transmitted is stored. The CRC generator may be initialized using the device address received from the communication interface and/or the register address received from the communication interface, before the CRC generator generates a CRC checksum for the data to be transmitted.
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