Abstract:
In various embodiments, a backlighting device is provided. The backlighting device may include a plurality of semiconductor light sources arranged in a plane and serving for generating light radiation, and a side wall arranged laterally with respect to the semiconductor light sources, where the side wall is inclined with respect to the plane predefined by the semiconductor light sources, and wherein the side wall is retroreflective at a side which can be irradiated with light radiation of the semiconductor light sources.
Abstract:
In a method, a spectral performance of the electromagnetic radiation is chosen in such a way that an integral of the spectral performance across a wave length interval between 380 nm and 780 nm has a nominal value, an integral of the spectral performance across a wave length interval between 420 nm and 460 nm has a first value, an integral of the spectral performance across a wave length interval between 510 nm and 550 nm has a second value, and an integral of the spectral performance across a wave length interval between 580 nm and 620 nm has a third value. The ratios of these values are chosen to be within certain ranges.
Abstract:
In a method, a spectral performance of the electromagnetic radiation is chosen in such a way that an integral of the spectral performance across a wave length interval between 380 nm and 780 nm has a nominal value, an integral of the spectral performance across a wave length interval between 420 nm and 460 nm has a first value, an integral of the spectral performance across a wave length interval between 510 nm and 550 nm has a second value, and an integral of the spectral performance across a wave length interval between 580 nm and 620 nm has a third value. The ratios of these values are chosen to be within certain ranges.
Abstract:
In various embodiments, a backlighting device is provided. The backlighting device may include a plurality of semiconductor light sources arranged in a plane and serving for generating light radiation, and a side wall arranged laterally with respect to the semiconductor light sources, where the side wall is inclined with respect to the plane predefined by the semiconductor light sources, and wherein the side wall is retroreflective at a side which can be irradiated with light radiation of the semiconductor light sources.