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    Backlighting device
    1.
    发明授权
    Backlighting device 有权

    公开(公告)号：US10564470B2

    公开(公告)日：2020-02-18

    申请号：US15325450

    申请日：2015-05-29

    Applicant: OSRAM OPTO Semiconductors GmbH

    Inventor： Felix Kimme ,  Christopher Koelper ,  Peter Brick

    IPC: G02F1/1335 ,  G02B5/12 ,  G02B5/124 ,  G02B5/128 ,  G02B5/13

    Abstract: In various embodiments, a backlighting device is provided. The backlighting device may include a plurality of semiconductor light sources arranged in a plane and serving for generating light radiation, and a side wall arranged laterally with respect to the semiconductor light sources, where the side wall is inclined with respect to the plane predefined by the semiconductor light sources, and wherein the side wall is retroreflective at a side which can be irradiated with light radiation of the semiconductor light sources.

    BACKLIGHTING DEVICE
    3.
    发明申请
    BACKLIGHTING DEVICE 审中-公开

    公开(公告)号：US20170160590A1

    公开(公告)日：2017-06-08

    申请号：US15325450

    申请日：2015-05-29

    Applicant: OSRAM OPTO Semiconductors GmbH

    Inventor： Felix Kimme ,  Christopher Koelper ,  Peter Brick

    IPC: G02F1/1335 ,  G02B5/12 ,  G02B5/13 ,  G02B5/124 ,  G02B5/128

    Abstract: In various embodiments, a backlighting device is provided. The backlighting device may include a plurality of semiconductor light sources arranged in a plane and serving for generating light radiation, and a side wall arranged laterally with respect to the semiconductor light sources, where the side wall is inclined with respect to the plane predefined by the semiconductor light sources, and wherein the side wall is retroreflective at a side which can be irradiated with light radiation of the semiconductor light sources.

    METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT
    5.
    发明申请
    METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT 有权
    生产光电半导体元件的方法和光电子半导体元件

    公开(公告)号：US20150279903A1

    公开(公告)日：2015-10-01

    申请号：US14434760

    申请日：2013-10-01

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Koelper ,  Alexander F. Pfeuffer ,  Patrick Rode

    IPC: H01L27/15 ,  H01L33/24 ,  H01L33/00

    CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/24 ,  H01L33/385 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands (4) having a semiconductor layer sequence (3) on a growth substrate (2), wherein the islands (4) each comprise at least one active zone (33) of the semiconductor layer sequence (3), and an average diameter of the islands (4), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive, B) producing a separating layer (5) on a side of the islands (4) facing the growth substrate (2), wherein the separating layer (5) surrounds the islands (4) all around, as viewed in a top view of the growth substrate (2), C) attaching a carrier substrate (6) to a side of the islands (4) facing away from the growth substrate (2), and D) detaching the growth substrate (2) from the islands (4), wherein at least a part of the separating layer (5) is destroyed and/or at least temporarily softened during the detachment.

    Abstract translation: 在该方法的至少一个实施例中，所述方法包括以下步骤：A）在生长衬底（2）上产生具有半导体层序列（3）的辐射活性岛（4），其中岛（4）各自包括 半导体层序列（3）的至少一个活性区域（33）和从生长衬底的顶视图观察的岛状物（4）的平均直径为50nm-10μm，包括B， ）在面向生长衬底（2）的岛状物（4）的一侧上产生分离层（5），其中分离层（5）围绕生长的顶视图中的所有岛（4）周围 衬底（2），C）将载体衬底（6）附接到所述岛（4）背离所述生长衬底（2）的一侧，以及D）将所述生长衬底（2）从所述岛（4）上分离， 其中分离层（5）的至少一部分在分离期间被破坏和/或至少暂时软化。

    MEASUREMENT OF THE LIGHT RADIATION OF LIGHT-EMITTING DIODES
    6.
    发明申请
    MEASUREMENT OF THE LIGHT RADIATION OF LIGHT-EMITTING DIODES 有权
    发光二极管的光辐射测量

    公开(公告)号：US20150204718A1

    公开(公告)日：2015-07-23

    申请号：US14423695

    申请日：2013-08-22

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Simeon Katz ,  Holger Specht ,  Alexander Linkov ,  Christopher Koelper

    IPC: G01J1/04 ,  G01M11/00 ,  G01J1/42

    CPC classification number: G01J1/0425 ,  G01J1/0474 ,  G01J1/42 ,  G01J2001/4252 ,  G01M11/30

    Abstract: The invention relates to a method for measuring a light radiation (300) emitted by a light-emitting diode (210). In the method, an end (121) of an optical fibre (120) which is connected to a measuring device (130) is irradiated with the light radiation (300), which is emitted by the light-emitting diode (210), through an optical device (140), so that a portion of the light radiation (300) is coupled into the optical fibre (120) and is guided to the measuring device (130). The optical device (140) causes the light radiation (300) passing through the optical device (140) to be emitted in diffuse form in the direction of the end (121) of the optical fibre (120). The invention also relates to an apparatus (100) for measuring a light radiation (300) emitted by a light-emitting diode (210).

    Abstract translation: 本发明涉及一种用于测量由发光二极管（210）发射的光辐射（300）的方法。 在该方法中，连接到测量装置（130）的光纤（120）的端部（121）被由发光二极管（210）发射的光辐射（300）照射通过 光学装置（140），使得光辐射（300）的一部分耦合到光纤（120）中并被引导到测量装置（130）。 光学装置（140）使通过光学装置（140）的光辐射沿着光纤（120）的端部（121）的方向以漫射形式发射。 本发明还涉及一种用于测量由发光二极管（210）发射的光辐射（300）的装置（100）。

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