公开(公告)号：US10665760B2

公开(公告)日：2020-05-26

申请号：US15816924

申请日：2017-11-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Alexander Behres ,  Darshan Kundaliya

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/08

Abstract: A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.

公开(公告)号：US09914997B2

公开(公告)日：2018-03-13

申请号：US14772679

申请日：2014-03-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Andreas Koller ,  Alexander Behres

IPC: C23C16/18 ,  C23C16/448 ,  C23C16/52 ,  B01D1/14

CPC classification number: C23C16/4482 ,  B01D1/14 ,  C23C16/18 ,  C23C16/4481 ,  C23C16/52

Abstract: A method for supplying a process with an enriched carrier gas. A first apparatus and a second apparatus are provided. The first apparatus has a precursor and is configured to bring a carrier gas into contact with the precursor and to enrich the carrier gas with the precursor. The second apparatus has a precursor and is configured to bring a carrier gas into contact with the precursor and to enrich the carrier gas with the precursor. The first apparatus supplies the second apparatus with an enriched carrier gas. The second apparatus supplies the enriched carrier gas for the process. A temperature of the first apparatus is controlled as a function of a quantity of precursor in the second apparatus.

公开(公告)号：US20180158993A1

公开(公告)日：2018-06-07

申请号：US15816924

申请日：2017-11-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Alexander Behres ,  Darshan Kundaliya

IPC: H01L33/50 ,  H01L33/00

Abstract: A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.