公开(公告)号：US20230080796A1

公开(公告)日：2023-03-16

申请号：US17759246

申请日：2021-01-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Markus Burger

IPC: H01L33/50 ,  H01L25/075 ,  H01L27/146 ,  H01L33/60

Abstract: In an embodiment a component includes a semiconductor chip, a converter layer and a grid structure, wherein the semiconductor chip is configured to generate electromagnetic radiation, wherein the converter layer is configured to convert at least one portion of the electromagnetic radiation, wherein the grid structure is configured to suppress lateral optical crosstalk, the grid structure having a grid frame and openings enclosed by the grid frame, wherein the grid structure only adjoins the converter layer, wherein the openings of the grid structure are free of a material of the converter layer, and wherein optical elements are arranged in the openings.

公开(公告)号：US10665760B2

公开(公告)日：2020-05-26

申请号：US15816924

申请日：2017-11-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Alexander Behres ,  Darshan Kundaliya

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/08

Abstract: A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.

公开(公告)号：US20170301835A1

公开(公告)日：2017-10-19

申请号：US15515766

申请日：2015-10-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank Singer ,  Britta Goeoetz ,  David Racz ,  Matthias Sperl

IPC: H01L33/54 ,  H01L33/56 ,  H01L33/50 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/54 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/505 ,  H01L33/56 ,  H01L33/62 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005

Abstract: A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips for producing electromagnetic radiation, arranging the plurality of semiconductor chips in a plane, forming a housing body composite, at least some regions of which are arranged between the semiconductor chips, forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips, encapsulating the plurality of conversion elements at least on their lateral edges by an encapsulation material, and separating the housing body composite into a plurality of optoelectronic semiconductor components.

公开(公告)号：US20140246690A1

公开(公告)日：2014-09-04

申请号：US14181104

申请日：2014-02-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Juergen Moosburger ,  Britta Goeoetz ,  Georg Dirscherl ,  Wolfgang Moench ,  Alexander Linkov

IPC: H01L33/48 ,  H01L33/60

CPC classification number: H01L33/60 ,  G03B9/02 ,  G03B15/02 ,  G03B15/05 ,  G03B2215/0567 ,  H01L33/58

Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 μm. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.

Abstract translation: 光电子半导体部件包括一个或多个发光二极管芯片。 发光二极管芯片具有主辐射侧。 沿着发光二极管芯片的主辐射方向在主辐射侧的下游配置隔膜。 隔膜安装在组件外壳上或组件外壳中。 主辐射侧具有至少50μm的平均边缘长度。 隔膜可以从不透光到透光的切换。 隔膜包括精确的一个用于辐射传播的开口区域。 半导体元件可以用作移动图像记录装置的手电筒。

公开(公告)号：US10224467B2

公开(公告)日：2019-03-05

申请号：US15318331

申请日：2015-06-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hailing Cui ,  Norwin Von Malm ,  Britta Goeoetz ,  Robert Schulz ,  Dominik Schulten

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/48

Abstract: A method for producing a plurality of conversion elements (10) is specified, comprising providing a carrier substrate (1), introducing a converter material (3) into a matrix material (2), applying the matrix material (2) with the converter material (3) to individual regions (8) of the carrier substrate (1) in a non-continuous pattern, applying a barrier substrate (5) to the matrix material (2) and to the carrier substrate (1), and singulating the carrier substrate (1) with the matrix material (2) and the barrier substrate (5) into a plurality of conversion elements (10) along singulation lines (V), wherein the conversion elements (10) in each case comprise at least one of the regions (8) of the matrix material (2).

公开(公告)号：US10103296B2

公开(公告)日：2018-10-16

申请号：US15515766

申请日：2015-10-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank Singer ,  Britta Goeoetz ,  David Racz ,  Matthias Sperl

IPC: H01L33/54 ,  H01L33/50 ,  H01L33/48 ,  H01L33/62 ,  H01L33/56

Abstract: A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips for producing electromagnetic radiation, arranging the plurality of semiconductor chips in a plane, forming a housing body composite, at least some regions of which are arranged between the semiconductor chips, forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips, encapsulating the plurality of conversion elements at least on their lateral edges by an encapsulation material, and separating the housing body composite into a plurality of optoelectronic semiconductor components.

公开(公告)号：US09806240B2

公开(公告)日：2017-10-31

申请号：US15120755

申请日：2015-03-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Christopher A. Tarry

IPC: H01L33/00 ,  H01L33/50 ,  C09K11/77 ,  H01L25/075

CPC classification number: H01L33/508 ,  C09K11/7774 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/501 ,  H01L33/505 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: Various embodiments may relate to a wavelength conversion element including at least one sintered wavelength converting material, wherein a grid is formed by channels within the sintered wavelength converting material, the channels are at least partially surrounded by the sintered wavelength converting material, the channels reach at least partially through the sintered wavelength converting material in a direction perpendicular or oblique to a main extension direction of the wavelength conversion element, and the channels contain a non-converting sintered separator material.

公开(公告)号：US20150228870A1

公开(公告)日：2015-08-13

申请号：US14423432

申请日：2013-08-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Juergen Moosburger ,  Andreas Ploessl ,  Matthias Sabathil

IPC: H01L33/56 ,  H01L33/00 ,  H01L33/50

CPC classification number: H01L33/56 ,  H01L33/0066 ,  H01L33/50 ,  H01L33/501 ,  H01L2933/0041

Abstract: A method is specified for producing a light-emitting semiconductor component, in which method a light-emitting semiconductor layer sequence (2) with an active layer (3) that is designed to emit light during operation of the semiconductor component is provided, a wavelength conversion layer (4) containing at least one wavelength conversion material is applied on the semiconductor layer sequence (2), and a ceramic layer (5) is applied on the wavelength conversion layer (4) by means of an aerosol deposition process. A light-emitting semiconductor component is also specified.

Abstract translation: 一种制造发光半导体部件的方法，其中提供了在半导体部件的工作过程中设计成发光的有源层（3）的发光半导体层序列（2），波长 将包含至少一种波长转换材料的转换层（4）施加在半导体层序列（2）上，并通过气溶胶沉积工艺将陶瓷层（5）施加到波长转换层（4）上。 还指定了发光半导体组件。

公开(公告)号：US20170219763A1

公开(公告)日：2017-08-03

申请号：US15501119

申请日：2015-08-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Norwin von Malm ,  Dominik Schulten

IPC: F21V8/00 ,  G02F1/1335

CPC classification number: G02B6/0073 ,  G02F1/133603 ,  G02F1/13362 ,  G02F2001/133614 ,  G02F2202/36

Abstract: An optelectonic arrangement and a lighting device are disclosed. In an embodiment the arrangement includes a semiconductor chip for generating radiation and a radiation conversion element located downstream of the semiconductor chip with respect to a radiation direction, wherein the radiation conversion element includes a plurality of conversion bodies each with a longitudinal extension axis, and wherein a spatial orientation of the longitudinal extension axes has a preferred direction.

公开(公告)号：US20170062672A1

公开(公告)日：2017-03-02

申请号：US15120755

申请日：2015-03-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Britta Goeoetz ,  Christopher A. Tarry

IPC: H01L33/50 ,  C09K11/77

CPC classification number: H01L33/508 ,  C09K11/7774 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/501 ,  H01L33/505 ,  H01L33/507 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: Various embodiments may relate to a wavelength conversion element including at least one sintered wavelength converting material, wherein a grid is formed by channels within the sintered wavelength converting material, the channels are at least partially surrounded by the sintered wavelength converting material, the channels reach at least partially through the sintered wavelength converting material in a direction perpendicular or oblique to a main extension direction of the wavelength conversion element, and the channels contain a non-converting sintered separator material.

Abstract translation: 各种实施例可以涉及包括至少一种烧结波长转换材料的波长转换元件，其中格栅由烧结波长转换材料内的通道形成，通道至少部分地被烧结的波长转换材料包围，通道达到 至少部分地通过烧结波长转换材料沿与波长转换元件的主延伸方向垂直或倾斜的方向，并且通道包含非转换烧结隔离材料。