公开(公告)号：US10276748B2

公开(公告)日：2019-04-30

申请号：US15514814

申请日：2015-10-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Kaempf ,  Simon Jerebic ,  Ingo Neudecker ,  Guenter Spath ,  Michael Huber ,  Korbinian Perzlmaier

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/20

Abstract: Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

公开(公告)号：US20190123251A1

公开(公告)日：2019-04-25

申请号：US16091082

申请日：2017-04-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ingo Neudecker ,  Juergen Moosburger ,  Andreas Ploessl

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/00

Abstract: A light-emitting arrangement is disclosed. In an embodiment a light-emitting arrangement includes a carrier, an electrical contact pad formed on the carrier, an electrically conductive contact film arranged on the contact pad and a light-emitting component having an electrical terminal on a first side, wherein the component is located with the first side on the contact film, wherein the electrical terminal is connected to the contact film in an electrically conductive manner, and wherein the electrical terminal is connected to the contact pad in an electrically conductive manner by way of the electrically conductive contact film.

公开(公告)号：US10115869B2

公开(公告)日：2018-10-30

申请号：US15030359

申请日：2014-10-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias Kaempf ,  Simon Jerebic ,  Ingo Neudecker ,  Guenter Spath ,  Michael Huber

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/20 ,  H01L23/00 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62

Abstract: The invention relates to an optoelectronic semiconductor chip (10) comprising a carrier (2) and a semiconductor body (1) having an active layer (13) provided for generating electromagnetic radiation. Said carrier (2) has a first main surface (2A) facing the semiconductor body, a second main surface (2B) facing away from the semiconductor body, and a sidewall (2C) arranged between the first main surface and the second main surface. The carrier (2) has a structured region (21, 22, 23, 2C) for enlarging the total surface area of the sidewall, wherein the structured region has singulation traces. The invention also relates to an optoelectronic component (100) comprising such a semiconductor chip and a method for producing a plurality of such semiconductor chips are specified.