OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT

    公开(公告)号:US20190097088A1

    公开(公告)日:2019-03-28

    申请号:US16081402

    申请日:2017-02-10

    摘要: An optoelectronic device (50) comprising a semiconductor body (10a, 10b, 10c) having an optically active region (12), a carrier (60), and a pair of connection layers (30a, 30b, 30c) having a first connection layer (32) and a second connection layer (34), wherein: the semiconductor body is disposed on the carrier, the first connection layer is disposed between the semiconductor body and the carrier and is connected to the semiconductor body, the second connection layer is disposed between the first connection layer and the carrier, at least one layer selected from the first connection layer and the second connection layer contains a radiation-permeable and electrically conductive oxide, and the first connection layer and the second connection layer are directly connected to each other at least in regions in one or more bonding regions, so that the pair of connection layers is involved in the mechanical connection of the semiconductor body to the carrier. A production process is also specified.

    OPTOELECTRONIC COMPONENT
    2.
    发明申请
    OPTOELECTRONIC COMPONENT 有权
    光电组件

    公开(公告)号:US20150115305A1

    公开(公告)日:2015-04-30

    申请号:US14524914

    申请日:2014-10-27

    IPC分类号: H01L33/62 H01L33/48 H01L33/60

    摘要: An optoelectronic component comprising a semiconductor body, a first connection layer, an insulation layer and a second connection layer, wherein the semiconductor body has an active region for generating electromagnetic radiation and the second connection layer comprises a first partial layer and a second partial layer is specified, wherein the insulation layer electrically insulates the first connection layer from the second connection layer, the first partial layer is arranged between the second partial layer and the semiconductor body in a vertical direction, in a plan view of the semiconductor body the first connection layer overlaps the first partial layer and is spaced apart from the second partial layer in a lateral direction, and the first connection layer has a first layer thickness and the second partial layer has a second layer thickness, wherein the first layer thickness and the second layer thickness differ from one another at most by 20%.

    摘要翻译: 一种包括半导体本体,第一连接层,绝缘层和第二连接层的光电子元件,其中所述半导体本体具有用于产生电磁辐射的有源区,所述第二连接层包括第一部分层和第二部分层 其中所述绝缘层将所述第一连接层与所述第二连接层电绝缘,所述第一部分层在垂直方向上布置在所述第二部分层和所述半导体本体之间,在所述半导体本体的平面图中,所述第一连接层 与第一部分层重叠并且在横向方向上与第二部分层间隔开,并且第一连接层具有第一层厚度,并且第二部分层具有第二层厚度,其中第一层厚度和第二层厚度 最多相差20%。