公开(公告)号：US20220255292A1

公开(公告)日：2022-08-11

申请号：US17616277

申请日：2020-05-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johann Ramchen ,  Andreas Fröhlich ,  Martin Haushalter ,  Jan Marfeld ,  Massimo Cataldo Mazzillo

IPC: H01S5/02325 ,  H01S5/02255 ,  H01S5/0683

Abstract: A semiconductor laser device is specified comprising an edge emitting semiconductor laser diode, which emits laser light along a horizontal direction during operation, a reflector element, which deflects a first part of the laser light in a vertical direction, while a second part of the laser light continues to propagate in the horizontal direction, and a detector element, which is arranged at least partly in a beam path of the second part of the laser light. An optoelectronic beam deflection element for a semiconductor laser device is furthermore specified.

公开(公告)号：US11888078B2

公开(公告)日：2024-01-30

申请号：US17790523

申请日：2021-01-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Massimo Cataldo Mazzillo ,  Tim Boescke ,  Wolfgang Zinkl

IPC: H01L31/107 ,  H01L31/109 ,  H01L31/118

CPC classification number: H01L31/1075 ,  H01L31/109 ,  H01L31/1185

Abstract: A semiconductor photodiode (600) comprises a top side (602) with an active surface area (604) for light entry, a bottom side (606), a bulk structure (610) made of a single semiconductor material, the bulk structure comprising a p-type layer (612a) and an n-type layer (612b), which together form the p-n junction (612) of the photodiode, wherein one of the two layers of the p-n junction is an upper p-n junction layer (612a) and the other one is a lower p-n junction layer (612b), wherein the upper p-n junction layer (612a) is located proximate to the active surface area (604), and a semiconductor light absorption layer (614), wherein the light absorption layer (612a), (614) defines the active surface area (604) and is arranged on top of the bulk structure (610), above the upper p-n junction layer (612a), and the semiconductor material of the light absorption layer (614) is different from the semiconductor material of the bulk structure (610), the light absorption layer (614) and the upper p-n junction layer (612a) thus forming a heterojunction, and the photodiode (600) further comprises a precursor layer (620) arranged between the bulk structure (610) and the light absorption layer (614), the light absorption layer (614) being grown on the precursor layer.

公开(公告)号：US12176453B2

公开(公告)日：2024-12-24

申请号：US18528920

申请日：2023-12-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Massimo Cataldo Mazzillo ,  Tim Boescke ,  Wolfgang Zinkl

IPC: H01L31/107 ,  H01L31/109 ,  H01L31/118

Abstract: An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.