公开(公告)号：US10217915B2

公开(公告)日：2019-02-26

申请号：US15730214

申请日：2017-10-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johann Ramchen ,  David Racz ,  Hans-Christoph Gallmeier ,  Stefan Grötsch ,  Simon Jerebic

IPC: H01L33/60 ,  H01L33/46 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00 ,  H01L25/075 ,  H01L31/0232 ,  H01L33/54 ,  H01L33/62 ,  H01L25/16 ,  H01L23/60 ,  H01L33/56

Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.

公开(公告)号：US20140231856A1

公开(公告)日：2014-08-21

申请号：US14347594

申请日：2012-09-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Magnus Ahlstedt ,  Johann Ramchen

IPC: H01L31/0232 ,  H01L33/58

CPC classification number: H01L31/0232 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/12044 ,  H01L2933/005 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for producing a radiation-emitting or radiation-receiving semiconductor component is specified. In a method step, a carrier body having a mounting surface is provided. In a further method step, a barrier frame is formed on the mounting surface, in such a way that the barrier frame laterally encloses a mounting region of the mounting surface. In a further method step, a radiation-emitting or radiation-receiving semiconductor chip is mounted within the mounting region on the mounting surface. The semiconductor chip is potted with a liquid lens material, wherein the lens material is applied to the mounting surface within the mounting region. The lens material is cured. The mounting surface, the barrier frame and the lens material are adapted to one another.

Abstract translation: 规定了辐射发射或辐射接收半导体部件的制造方法。 在方法步骤中，提供具有安装表面的载体主体。 在另一方法步骤中，在安装表面上形成阻挡框架，使得阻挡框架横向地包围安装表面的安装区域。 在另一方法步骤中，辐射发射或辐射接收半导体芯片安装在安装表面上的安装区域内。 半导体芯片用液体透镜材料封装，其中透镜材料被施加到安装区域内的安装表面。 镜片材料固化。 安装表面，阻挡框架和透镜材料彼此适配。

公开(公告)号：US09343596B2

公开(公告)日：2016-05-17

申请号：US14347594

申请日：2012-09-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Magnus Ahlstedt ,  Johann Ramchen

IPC: H01L21/00 ,  H01L31/0232 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62

CPC classification number: H01L31/0232 ,  H01L33/54 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/12044 ,  H01L2933/005 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for producing a radiation-emitting or radiation-receiving semiconductor component is specified. In a method step, a carrier body having a mounting surface is provided. In a further method step, a barrier frame is formed on the mounting surface, in such a way that the barrier frame laterally encloses a mounting region of the mounting surface. In a further method step, a radiation-emitting or radiation-receiving semiconductor chip is mounted within the mounting region on the mounting surface. The semiconductor chip is potted with a liquid lens material, wherein the lens material is applied to the mounting surface within the mounting region. The lens material is cured. The mounting surface, the barrier frame and the lens material are adapted to one another.

Abstract translation: 规定了辐射发射或辐射接收半导体部件的制造方法。 在方法步骤中，提供具有安装表面的载体主体。 在另一方法步骤中，在安装表面上形成阻挡框架，使得阻挡框架横向地包围安装表面的安装区域。 在另一方法步骤中，辐射发射或辐射接收半导体芯片安装在安装表面上的安装区域内。 半导体芯片用液体透镜材料封装，其中透镜材料被施加到安装区域内的安装表面。 镜片材料固化。 安装表面，阻挡框架和透镜材料彼此适配。

公开(公告)号：US20220255292A1

公开(公告)日：2022-08-11

申请号：US17616277

申请日：2020-05-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johann Ramchen ,  Andreas Fröhlich ,  Martin Haushalter ,  Jan Marfeld ,  Massimo Cataldo Mazzillo

IPC: H01S5/02325 ,  H01S5/02255 ,  H01S5/0683

Abstract: A semiconductor laser device is specified comprising an edge emitting semiconductor laser diode, which emits laser light along a horizontal direction during operation, a reflector element, which deflects a first part of the laser light in a vertical direction, while a second part of the laser light continues to propagate in the horizontal direction, and a detector element, which is arranged at least partly in a beam path of the second part of the laser light. An optoelectronic beam deflection element for a semiconductor laser device is furthermore specified.

公开(公告)号：US20180033931A1

公开(公告)日：2018-02-01

申请号：US15730214

申请日：2017-10-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johann Ramchen ,  David Racz ,  Hans-Christoph Gallmeier ,  Stefan Grötsch ,  Simon Jerebic

IPC: H01L33/60 ,  H01L33/46 ,  H01L23/29 ,  H01L33/62 ,  H01L33/54 ,  H01L23/31 ,  H01L25/16 ,  H01L25/075 ,  H01L23/00 ,  H01L23/60 ,  H01L31/0232

CPC classification number: H01L33/60 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0753 ,  H01L25/167 ,  H01L31/0232 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01079 ,  H01L2924/05032 ,  H01L2924/05432 ,  H01L2924/12036 ,  H01L2924/181 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.