公开(公告)号：US20180190874A1

公开(公告)日：2018-07-05

申请号：US15737724

申请日：2016-06-16

申请人： OSRAM Opto Semiconductors GmbH

发明人： Simeon Katz ,  Kai Gehrke ,  Massimo Drago ,  Joachim Hertkorn

IPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/12 ,  H01L33/00 ,  H01L31/0304 ,  H01L31/0224

CPC分类号： H01L33/42 ,  H01L31/022475 ,  H01L31/03044 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016

摘要： A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.

公开(公告)号：US11094845B2

公开(公告)日：2021-08-17

申请号：US16489835

申请日：2018-03-15

申请人： OSRAM Opto Semiconductors GmbH

发明人： Massimo Drago ,  Alexander Frey ,  Joachim Hertkorn

IPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

摘要： A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1≥0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2≥0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3≤0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

公开(公告)号：US20200235264A1

公开(公告)日：2020-07-23

申请号：US16489835

申请日：2018-03-15

申请人： OSRAM Opto Semiconductors GmbH

发明人： Massimo Drago ,  Alexander Frey ,  Joachim Hertkorn

IPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

摘要： A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including Alx1Ga1-x1-y1Iny1N, where-in y1≥0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including Alx2Ga1-x2-y2Iny2N, wherein x2≥0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes Alx3Ga1-x3-y3Iny3N, wherein x3+y3≤0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.

公开(公告)号：US10566501B2

公开(公告)日：2020-02-18

申请号：US15737724

申请日：2016-06-16

申请人： OSRAM Opto Semiconductors GmbH

发明人： Simeon Katz ,  Kai Gehrke ,  Massimo Drago ,  Joachim Hertkorn

IPC分类号： H01L33/00 ,  H01L33/42 ,  H01L33/12 ,  H01L31/0224 ,  H01L31/0304 ,  H01L33/32

摘要： A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.